The Vacancy Generation Influence on the Initial Stage of Ion Implantation

2015 ◽  
Vol 1097 ◽  
pp. 29-34
Author(s):  
E.S. Parfenova ◽  
Anna G. Knyazeva

The coupled model is presented to describe the elements penetration into the surface layer of metal during the process of ion implantation. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. In addition, the existence of vacancies in the metal surface and their generation under the stresses influence are taken into account. The kinetic law is written on the basis of the thermodynamics of irreversible processes. The solution had been found numerically. As a result, the distributions of impurity concentration and deformations have been obtained for various time moments. The comparison of the concentration profiles with vacancies and without their have been given.

Author(s):  
O. I. Velichko

A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are generated either in the course of ion implantation or at the initial stage of thermal treatment and that they migrate inward and to the surface of a semiconductor in the basic stage of annealing. It is shown that the form of the “tail” in the boron profile with the logarithmic concentration axis changes from a straight line if the average lifetime of impurity interstitials is substantially shorter than the annealing duration to that bending upwards for increasing lifetime. The calculated impurity concentration profiles are in excellent agreement with the experimental data describing the redistribution of implanted boron for low-temperature annealing at 750[Formula: see text]C for 1[Formula: see text]h and at 800[Formula: see text]C for 35[Formula: see text]min. Simultaneously, the experimental phenomenon of incomplete electrical activation of boron atoms in the “tail” region is naturally explained.


2016 ◽  
Vol 685 ◽  
pp. 413-416 ◽  
Author(s):  
E.S. Parfenova ◽  
Anna G. Knyazeva

In this paper, the isothermal model of the initial stage of ion implantation process taking into account internal boundary is presented. It is assumed that implantable impurity generates mechanical perturbations. These waves can propagate with different velocities before and after the border. The examples of the waveform evolution at transition across the boundary for different combinations of the model parameters are presented.


2011 ◽  
Vol 299-300 ◽  
pp. 65-68
Author(s):  
Ming Gao ◽  
Li Li Zhang ◽  
Tao Huang ◽  
Meng Ru Lv

A strong pulse electromagnetic field was employed to treat the surface layer of several metal materials. The results showed that the treatment of the strong pulse electromagnetic field could modify the microstructure of the region around the crack on the 45# steel surface. It could also make the recovery process occur in the scratch on the brass surface, and make the surface layer of the Wood’s alloy melt in a very shot time. These results indicated that the strong electromagnetic pulse could be developed as an effective non-contact method for the metal surface processing.


Entropy ◽  
2018 ◽  
Vol 20 (6) ◽  
pp. 479 ◽  
Author(s):  
Yongqi Wang ◽  
Kolumban Hutter

2018 ◽  
Vol 206 ◽  
pp. 03001
Author(s):  
X Zhang ◽  
X L Chang ◽  
R L Ma ◽  
L Zhang ◽  
X D Chen ◽  
...  

A three-dimensional coupled model of electromagnetic field, temperature field and curing degree field was established. Based on this model, the simulation of microwave curing process of glass fiber epoxy ring was realized, and the temperature distribution at different time was obtained. Numerical results indicate that the temperature difference within the composite ring is mainly formed in the initial stage during microwave curing.


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