Different shapes of impurity concentration profiles formed by long-range interstitial migration

A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are generated either in the course of ion implantation or at the initial stage of thermal treatment and that they migrate inward and to the surface of a semiconductor in the basic stage of annealing. It is shown that the form of the “tail” in the boron profile with the logarithmic concentration axis changes from a straight line if the average lifetime of impurity interstitials is substantially shorter than the annealing duration to that bending upwards for increasing lifetime. The calculated impurity concentration profiles are in excellent agreement with the experimental data describing the redistribution of implanted boron for low-temperature annealing at 750[Formula: see text]C for 1[Formula: see text]h and at 800[Formula: see text]C for 35[Formula: see text]min. Simultaneously, the experimental phenomenon of incomplete electrical activation of boron atoms in the “tail” region is naturally explained.

Download Full-text

The Vacancy Generation Influence on the Initial Stage of Ion Implantation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1097.29 ◽

2015 ◽

Vol 1097 ◽

pp. 29-34

Author(s):

E.S. Parfenova ◽

Anna G. Knyazeva

Keyword(s):

Surface Layer ◽

Ion Implantation ◽

Metal Surface ◽

Impurity Concentration ◽

Coupled Model ◽

Irreversible Processes ◽

Concentration Profiles ◽

Thermodynamics Of Irreversible Processes ◽

Vacancy Generation ◽

Initial Stage

The coupled model is presented to describe the elements penetration into the surface layer of metal during the process of ion implantation. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. In addition, the existence of vacancies in the metal surface and their generation under the stresses influence are taken into account. The kinetic law is written on the basis of the thermodynamics of irreversible processes. The solution had been found numerically. As a result, the distributions of impurity concentration and deformations have been obtained for various time moments. The comparison of the concentration profiles with vacancies and without their have been given.

Download Full-text

Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.131-133.393 ◽

2007 ◽

Vol 131-133 ◽

pp. 393-398 ◽

Cited By ~ 2

Author(s):

Xin Zhu ◽

De Ren Yang ◽

Ming Li ◽

Can Cui ◽

Lei Wang ◽

...

Keyword(s):

Low Temperature ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Furnace Annealing ◽

Thermal Donor ◽

Low Temperature Annealing ◽

Initial Stage ◽

Donor Formation ◽

Oxygen Precipitates ◽

Ge Doping

The thermal donor formation at 425oC - 450oC in Ge doped Czochralski (GCZ) silicon having about 1016 cm-3 Ge content pretreated by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) has been investigated using low-temperature infrared spectroscopy (LT-IR). The measurements prove that lightly Ge doping can enhance the formation of thermal double donors in the initial stage of the low temperature annealing after RTA process. Ge induced additional grown-in oxygen precipitates during silicon ingot growth and the abundant self-interstitials during RTA may be the reason for the enhancement. However, after extending the annealing time at the low temperatures, the thermal donor concentration in the GCZ silicon is lower than that in the conventional CZ silicon. In final, the mechanism is also discussed.

Download Full-text

Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.295-296.27 ◽

2010 ◽

Vol 295-296 ◽

pp. 27-32

Author(s):

Oleg Velichko ◽

Olga Burunova

Keyword(s):

Low Temperature ◽

Electron Density ◽

Point Defects ◽

Arsenic Atom ◽

Low Temperature Annealing ◽

Initial Stage ◽

Stable Clusters ◽

Charged Clusters

Simulation of arsenic clustering in Si at a temperature of 750 degrees Celsius has been carried out. It has been shown that considering the formation of singly or doubly negatively charged clusters that incorporate one or two arsenic atoms and point defects, one obtains a good fit to the measured values of electron density. It is supposed that we have the initial stage of clustering, when the concentration of complexes with one arsenic atom incorporated is high enough and the diffusion of these mobile particles provides for the formation of more stable clusters incorporating two arsenic atoms.

Download Full-text

Low-temperature annealing of YBa2Cu3O7-x

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100120849 ◽

1992 ◽

Vol 50 (1) ◽

pp. 88-89

Author(s):

R.L. Sabatini ◽

Yimei Zhu ◽

Masaki Suenaga ◽

A.R. Moodenbaugh

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Low Temperature ◽

Oxygen Diffusion ◽

Diffusion Rate ◽

Oxygen Depletion ◽

Low Temperature Annealing ◽

Transmission Electron ◽

Microstructural Effects ◽

Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

Download Full-text

The Effect of Low-temperature Annealing on the Structure and Chemical Composition of Cu2 ZnSnS4 Films Deposited on Flexible Polyimide Substrates

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) ◽

10.1109/nap51477.2020.9309580 ◽

2020 ◽

Author(s):

Roman Pshenychnyi ◽

Stanislav Kakherskyi ◽

Oleksandr Dobrozhan ◽

Denys Kurbatov ◽

Anatoliy Opanasyuk

Keyword(s):

Chemical Composition ◽

Low Temperature ◽

Low Temperature Annealing

Download Full-text

Low-temperature annealing of arsenic/phosphorus junctions

IEEE Transactions on Electron Devices ◽

10.1109/16.69906 ◽

1991 ◽

Vol 38 (2) ◽

pp. 278-284 ◽

Cited By ~ 17

Author(s):

M.E. Law ◽

J.R. Pfiester

Keyword(s):

Low Temperature ◽

Low Temperature Annealing

Download Full-text

Effects of equal channel angular pressing and heat treatments on the microstructures and mechanical properties of selective laser melted and cast AlSi10Mg alloys

Archives of Civil and Mechanical Engineering ◽

10.1007/s43452-021-00246-y ◽

2021 ◽

Vol 21 (3) ◽

Author(s):

Przemysław Snopiński ◽

Mariusz Król ◽

Marek Pagáč ◽

Jana Petrů ◽

Jiří Hajnyš ◽

...

Keyword(s):

Mechanical Properties ◽

Low Temperature ◽

Equal Channel Angular Pressing ◽

Heat Treatments ◽

Electron Backscattered Diffraction ◽

Angular Pressing ◽

Low Temperature Annealing ◽

Transmission Electron ◽

Before And After ◽

The Impact

AbstractThis study investigated the impact of the equal channel angular pressing (ECAP) combined with heat treatments on the microstructure and mechanical properties of AlSi10Mg alloys fabricated via selective laser melting (SLM) and gravity casting. Special attention was directed towards determining the effect of post-fabrication heat treatments on the microstructural evolution of AlSi10Mg alloy fabricated using two different routes. Three initial alloy conditions were considered prior to ECAP deformation: (1) as-cast in solution treated (T4) condition, (2) SLM in T4 condition, (3) SLM subjected to low-temperature annealing. Light microscopy, transmission electron microscopy, X-ray diffraction line broadening analysis, and electron backscattered diffraction analysis were used to characterize the microstructures before and after ECAP. The results indicated that SLM followed by low-temperature annealing led to superior mechanical properties, relative to the two other conditions. Microscopic analyses revealed that the partial-cellular structure contributed to strong work hardening. This behavior enhanced the material’s strength because of the enhanced accumulation of geometrically necessary dislocations during ECAP deformation.

Download Full-text