The influence of vacancy generation at the initial stage of ion implantation

The coupled model is presented to describe the elements penetration into the surface layer of metal during the process of ion implantation. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. In addition, the existence of vacancies in the metal surface and their generation under the stresses influence are taken into account. The kinetic law is written on the basis of the thermodynamics of irreversible processes. The solution had been found numerically. As a result, the distributions of impurity concentration and deformations have been obtained for various time moments. The comparison of the concentration profiles with vacancies and without their have been given.

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The Mathematical Modeling of the Initial Stage of Ion Implantation into the Target with Coating

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.743.138 ◽

2017 ◽

Vol 743 ◽

pp. 138-141

Author(s):

Elena S. Parfenova

Keyword(s):

Mathematical Modeling ◽

Ion Implantation ◽

Internal Boundary ◽

Isothermal Model ◽

Initial Stage ◽

Before And After ◽

Implantation Process

The paper presents a non-isothermal model of the initial stage of ion implantation process. The model takes into account the existence of internal interfaces. The model assumes that the implantable impurity generates mechanical perturbations. These disturbances can propagate at different speeds before and after internal boundary. The examples of the waveform evolution in transition across the border are shown.

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INFLUENCE OF ION IMPLANTATION ON OXIDATION BEHAVIOR OF TiAl

International Journal of Modern Physics B ◽

10.1142/s0217979206041860 ◽

2006 ◽

Vol 20 (25n27) ◽

pp. 4667-4672 ◽

Cited By ~ 1

Author(s):

MICHIKO YOSHIHARA ◽

SHIGEJI TANIGUCHI

Keyword(s):

Ion Implantation ◽

Selective Oxidation ◽

Oxidation Behavior ◽

Complex Oxide ◽

The Other ◽

Alloying Elements ◽

Implantation Technique ◽

Other Hand ◽

Initial Stage ◽

Cu And Zn

The influence of alloying elements on oxidation behavior of TiAl has been investigated using an ion-implantation technique and the mechanisms were discussed. The influence can be classified into several groups according to their effects. The implantation of β-forming elements, halogens, Cu and Zn results in a significant improvement of the oxidation behavior through formation of Al 2 O 3 layer in the initial stage of oxidation. The improvement by Zn is attributed to the formation of complex oxide of Zn and selective oxidation of Al beneath the layer. The implantation of Al , Si or P is also effective. On the other hand, implantation of Ag , Se and other several elements enhance the oxidation. The deterioration by Ag or Se is explained in terms of Al depletion in the implanted layer.

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Influence of Ion Implantation of Several Elements on Oxidation Behavior of TiAl

Materials Science Forum ◽

10.4028/www.scientific.net/msf.522-523.633 ◽

2006 ◽

Vol 522-523 ◽

pp. 633-640 ◽

Cited By ~ 1

Author(s):

Michiko Yoshihara ◽

Shigeji Taniguchi ◽

D. Furumaki ◽

M. Aono

Keyword(s):

Ion Implantation ◽

Atmospheric Pressure ◽

Oxidation Behavior ◽

Alumina Scale ◽

Complex Oxide ◽

Oxidation Products ◽

X Ray ◽

Cyclic Oxidation Test ◽

Initial Stage ◽

Acceleration Voltage

TiAl-based alloys have attractive properties as light weight heat-resisting material. In the present work, the influence of Cu, Zn, Ag and Se on the oxidation behavior of TiAl was investigated by ion implantation at acceleration voltage of 50 kV and ion doses of 1019 to 2x1021 ions/m2. The oxidation behavior was assessed by a cyclic oxidation test at 1200 K in a flow of purified oxygen under atmospheric pressure. The oxidation products were analyzed by conventional methods including X-ray diffractometry, SEM and EPMA. The implantation of Zn and Cu improves the oxidation resistance significantly by forming virtually Al2O3 scales, while Ag and Se enhance the oxidation. The improvement by Zn is attributable to the formation of complex oxide of Zn in the initial stage of oxidation. The oxygen partial pressure under the layer seems to be very low, resulting in the formation of alumina scale due to a selective oxidation of Al. The influence of Cu is not certain. The influence of Ag and Se is explained in terms of Al depletion in the implanted layer.

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Amorphization of Silicon by Boron Ion Implantation

MRS Proceedings ◽

10.1557/proc-71-203 ◽

1986 ◽

Vol 71 ◽

Cited By ~ 2

Author(s):

Y. Shih ◽

J. Washburn ◽

R. Gronsky ◽

E.R. Weber

Keyword(s):

Ion Implantation ◽

Amorphous Silicon ◽

Point Defects ◽

Room Temperature ◽

Liquid Nitrogen Temperature ◽

Critical Energy ◽

High Energy ◽

Dose Rates ◽

Initial Stage ◽

Boron Ions

AbstractAmorphization of silicon due to implantation of boron ions which is the lightest element used for I.C. fabrication processes, has been systematically studied for various temperatures, voltages and dose rates. A model for formation of amorphous silicon by light ion implantation is proposed. It is suggested that accumulation of point defects and/or clusters is required at the initial stage of amorphization process. Diinterstitial -divacancy pairs are suggested to be the embryos of amorphous zones formed during implantation at room temperature. Out -diffusion of highly mobile interstitials during amorphization is thought to explain differences in the critical energy for amorphization with low and high energy implantation at liquid nitrogen temperature.

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Effect of Ion-Implantation on the Microstructure of Si3N4 Based Ceramics

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.290.234 ◽

2005 ◽

Vol 290 ◽

pp. 234-237

Author(s):

J.K. Babcsán ◽

Maria Berkes Maros ◽

N. Wanderka ◽

D. Klaffke ◽

Helmut Schubert

Keyword(s):

Ion Implantation ◽

Room Temperature ◽

Amorphous Layer ◽

Diffraction Measurement ◽

Wear Coefficient ◽

Transmission Electron ◽

Initial Stage ◽

The Coefficient Of Friction ◽

Electron Diffraction Measurement ◽

Wear Tests

Si3N4 based ceramics that made by hot isostatic press, were implanted at room temperature with N+ - and C+ - ions with energy of 500 keV and 2 MeV, respectively. The specimens were irradiated at a fluence of 1017 ion/cm2. The microstructure changes after ionimplantation in the surface layer were investigated by transmission electron microscopy (TEM). The effect of ion-implantation on the tribological properties was also studied. After N+ and C+ ionimplantation an amorphous layer near to the surface has been formed which was observed by electron diffraction measurement. The wear tests were performed by means of a ball-on-disk configuration using commercially available Si3N4 ball. The friction coefficient was measured online, the wear coefficient was determined on the base of the wear scar sizes. The specific wear rate was reduced by N+-implantation and the coefficient of friction was lower in the initial stage in both cases.

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Diffusion Creep during Grain Growth in Nanocrystalline Metals

Materials Science Forum ◽

10.4028/www.scientific.net/msf.467-470.1283 ◽

2004 ◽

Vol 467-470 ◽

pp. 1283-1288

Author(s):

Yuri Estrin ◽

Günter Gottstein ◽

Lasar S. Shvindlerman

Keyword(s):

Grain Size ◽

Creep Rate ◽

Grain Growth ◽

Diffusion Creep ◽

Secondary Creep ◽

Rate Reduction ◽

Vacancy Generation ◽

Diffusion Controlled ◽

Initial Stage ◽

Rate Behaviour

Diffusion controlled creep in nanostructured materials is considered for the case when grain growth occurs concurrently. The Nabarro-Herring and Coble mechanisms that would predict creep rate reduction are re-considered to include the effect of grain-growth induced vacancy generation. It is shown that under such conditions creep is accelerated during an initial stage of grain growth as compared to the case of constant grain size. This creep enhancement stage is followed by a period of reduced creep rate. The predicted strain rate behaviour resembles primary and secondary creep.

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Formation of Intermetallic Phases in Ion Implantation

Journal of Mathematics ◽

10.1155/2020/8875976 ◽

2020 ◽

Vol 2020 ◽

pp. 1-5

Author(s):

Fuzhang Wang ◽

Asfandyar Khan ◽

Muhammad Ayaz ◽

Imtiaz Ahmad ◽

Rashid Nawaz ◽

...

Keyword(s):

Ion Implantation ◽

Concentration Distribution ◽

Qualitative Difference ◽

Intermetallic Phases ◽

Physical Processes ◽

Nickel Ions ◽

Initial Stage ◽

New Phase ◽

Special Case ◽

Characteristic Scales

This paper presents a model for the formation of intermetallic phases in the modified nickel ions in the surface layer of aluminum. It is shown that the absorption of ions in the bulk of the qualitative difference between the models with and without the relaxation of the mass flux is reduced to a difference in the characteristic scales. It was shown that the concentration distribution depends on the relation between time scales of various physical processes. We have extended the existing model to a unique simple model describing the formation of a new phase at the initial stage of ion implantation. The parameters containing in the model were evaluated using literature data. The known problem is a special case for our model.

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Initial stage of nitridation on Si(100) surface using low-energy nitrogen ion implantation

Surface Science ◽

10.1016/j.susc.2006.07.015 ◽

2006 ◽

Vol 600 (17) ◽

pp. 3496-3501 ◽

Cited By ~ 6

Author(s):

Ki-jeong Kim ◽

Tai-Hee Kang ◽

Kyuwook Ihm ◽

Chulho Jeon ◽

Chan-Cuk Hwang ◽

...

Keyword(s):

Ion Implantation ◽

Low Energy ◽

Nitrogen Ion Implantation ◽

Initial Stage ◽

Nitrogen Ion

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Возможности метода задающей маски для исследования характеристик планарных ВТСП-структур в зависимости от толщины сверхпроводящей пленки

Журнал технической физики ◽

10.21883/jtf.2020.10.49799.313-19 ◽

2020 ◽

Vol 90 (10) ◽

pp. 1677

Author(s):

Д.В. Мастеров ◽

С.А. Павлов ◽

А.Е. Парафин ◽

П.А. Юнин

Keyword(s):

Critical Temperature ◽

Ion Implantation ◽

Final Stage ◽

Manufacturing Process ◽

Ybco Film ◽

Structural Parameters ◽

Traditional Methods ◽

Ybco Films ◽

Initial Stage

Unlike traditional methods of fabrication of the planar superconducting structures based on YBCO films, in which etching or ion implantation is used to form the topology, in the method of preliminary topology mask (TM), the topology is set at the initial stage of the structure manufacturing process, during the formation of TM, and the deposition of YBCO is its final stage. Superconducting elements of the structure are formed in the windows of the TM, and insulating regions are formed between them. In this paper, having fixed the topology of superconducting bridges at the stage of the formation of TM, we measured their characteristics depending on the thickness of the YBCO film, sequentially conducting deposition cycles. After each YBCO deposition, the structural parameters of the film as well as the critical temperature and current at the bridges, including those with Josephson contacts formed on the bicrystalline substrate, were measured.

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