The Effect of Gap Width on Field Emission Properties of Lateral Silicon Diodes

2015 ◽  
Vol 1109 ◽  
pp. 505-508
Author(s):  
J. Rouhi ◽  
F.S. Husairi ◽  
Kevin Alvin Eswar ◽  
M.H. Mamat ◽  
Salman A.H. Alrokayan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Anode Voltage ◽  
Field Enhancement ◽  
Wet Etching ◽  
Electrical Performance ◽  
Simple Method ◽  
Field Emission Properties ◽  
Turn On ◽  
Local Anodic Oxidation ◽  
Gap Width

A simple method for fabricating lateral Si diodes with various gap widths were designed using the special properties of anisotropic TMAH wet etching and local anodic oxidation. The electrical performance of lateral diode was characterized using an HP4156c semiconductor parameter analyzer (SPA300HV, Agilent) at room temperature in a vacuum environment lower than 10-8Torr. The emission current from the silicon emitter cathode was measured as a function of the applied anode voltage. The effect of changing the anode-cathode gap was observed in the I-V characteristics, with a distinct reduction in the device turn-on with a decrease in the gap. For narrowed nanogaps from 55 nm to 35 nm, the turn-on voltage was decreased from 21 V to 16 V. Values of field enhancement factor β and emitting area A for different gap width were measured using Fowler-Nordheim plot. Our results indicate that β reduces and emitting area increases with increasing of gap width.

Synthesis of Carbon–Nitrogen Nanostructures by Hot Isostatic Pressure Apparatus and Their Field Emission Properties

2007 ◽  
Vol 7 (2) ◽  
pp. 570-574
Author(s):  
Yang Doo Lee ◽  
V. D. Blank ◽  
D. V. Batov ◽  
S. G. Buga ◽  
Yun-Hi Lee ◽  
...  
Keyword(s):  
Field Emission ◽  
Field Enhancement ◽  
Glass Frit ◽  
Gas Mixture ◽  
Nitrogen Gas ◽  
Field Emission Properties ◽  
Turn On ◽  
Field Emitters ◽  
Enhancement Factors ◽  
Resistive Heater

Carbon–nitrogen (CN) nanofibers were synthesized in argon–nitrogen gas mixture at 75 MPa by high isostatic pressure (HIP) apparatus using a graphite resistive heater. The CN nanofibers were grown in random with the diameter of about 200 nm and the length over 5 μm. The structures obtained can be divided bamboo-like, spring-like, and bead necklace-like CN nanofibers. The nitrogen content of up to 8.4% was found in CN nanofibers by EELS analysis. Field emission results showed that the density of field emitters and the field enhancement factors changed by surface treatments and that CN nanofibers contained glass frit. The screen-printed CN nanofiber had a turn-on field of 2 V/μm.

Controlling the shape and gap width of silicon electrodes using local anodic oxidation and anisotropic TMAH wet etching

2012 ◽  
Vol 27 (6) ◽  
pp. 065001 ◽  
Author(s):  
Jalal Rouhi ◽  
Shahrom Mahmud ◽  
Sabar Derita Hutagalung ◽  
Nima Naderi ◽  
Saeid Kakooei ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Wet Etching ◽  
Local Anodic Oxidation ◽  
Gap Width

Effect of Catalyst Thickness and Plasma Pretreatment on the Growth of Carbon Nanotubes and Their Field Emission Properties

2007 ◽  
Vol 7 (11) ◽  
pp. 3731-3735 ◽  
Author(s):  
Hyung Soo Uh ◽  
Sang Sik Park ◽  
Byung Whan Kim
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Field Enhancement ◽  
Close Relation ◽  
Emission Current Density ◽  
Ni Catalyst ◽  
Emission Characteristics ◽  
Field Emission Properties ◽  
Turn On ◽  
Plasma Pretreatment

We demonstrated that the diameter and the density of carbon nanotubes (CNTs) which had a close relation to electric-field-screening effect could be easily changed by the control of catalytic Ni thickness combined with NH3 plasma pretreatment. Since the diameter and the density of CNTs had a tremendous impact on the field-emission characteristics, optimized thickness of catalyst and application of plasma pretreatment greatly improved the emission efficiency of CNTs. In the field emission test using diode-type configuration, well-dispersed thinner CNTs exhibited lower turn-on voltage and higher field enhancement factor than the densely-packed CNTs. A CNT film grown using a plasma-pretreated 25 Å-thick Ni catalyst showed excellent field emission characteristics with a very low turn-on field of 1.1 V/μm @ 10 μA/cm2 and a high emission current density of 1.9 mA/cm2 @ 4.0 V/μm, respectively.

Field Emission from Nanocrystalline Diamond/Carbon Nanowall Composite Films Deposited on Scratched Substrates

2012 ◽  
Vol 1395 ◽  
Author(s):  
C.Y. Cheng ◽  
M. Nakashima ◽  
K. Teii
Keyword(s):  
Field Emission ◽  
Enhancement Factor ◽  
Composite Films ◽  
Diamond Films ◽  
Field Enhancement ◽  
Nanocrystalline Diamond ◽  
Field Emission Properties ◽  
Turn On ◽  
Carbon Nanowalls ◽  
Wall Spacing

ABSTRACTWe report the deposition and field emission properties of nanostructured composites consisting of carbon nanowalls (CNWs) and nanocrystalline diamond films by introducing two kinds of substrate scratching pretreatment, i.e., undulation and ultrasonic vibration. With increasing duration of scratching pretreatment, the morphology of the deposits changes from simple CNWs to a film/CNW composite and lastly to CNWs on a film, and then the space between the walls is increased. The emission turn-on field is reduced from 2.1 V/μm for simple CNWs to around 1.2 V/μm for the composite films, accompanied by an increase in field enhancement factor. The results indicate that electric field screening between the walls is successfully suppressed by widening of the wall spacing.

scholarly journals Large Scale Synthesis of Nanopyramidal-Like VO2 Films by an Oxygen-Assisted Etching Growth Method with Significantly Enhanced Field Emission Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 549 ◽  
Author(s):  
Zongtao Zhang ◽  
Yifei Feng ◽  
Yanfeng Gao ◽  
Deliang Chen ◽  
Guosheng Shao
Keyword(s):  
Field Emission ◽  
Large Scale ◽  
Field Enhancement ◽  
Transformation Mechanism ◽  
Simple Method ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Typical Sample ◽  
Growth Method ◽  
Device Applications

The present investigation reported on a novel oxygen-assisted etching growth method that can directly transform wafer-scale plain VO2 thin films into pyramidal-like VO2 nanostructures with highly improved field-emission properties. The oxygen applied during annealing played a key role in the formation of the special pyramidal-like structures by introducing thin oxygen-rich transition layers on the top surfaces of the VO2 crystals. An etching related growth and transformation mechanism for the synthesis of nanopyramidal films was proposed. Structural characterizations confirmed the formation of a composite VO2 structure of monoclinic M1 (P21/c) and Mott insulating M2 (C2/m) phases for the films at room temperature. Moreover, by varying the oxygen concentration, the nanocrystal morphology of the VO2 films could be tuned, ranging over pyramidal, dot, and/or twin structures. These nanopyramidal VO2 films showed potential benefits for application such as temperature−regulated field emission devices. For one typical sample deposited on a 3-inch silicon substrate, its emission current (measured at 6 V/μm) increased by about 1000 times after the oxygen-etching treatment, and the field enhancement factor β reached as high as 3810 and 1620 for the M and R states, respectively. The simple method reported in the present study may provide a protocol for building a variety of large interesting surfaces for VO2-based device applications.

Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction

2013 ◽  
Vol 740-742 ◽  
pp. 1006-1009 ◽  
Author(s):  
Peter M. Gammon ◽  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Ana M. Sanchez ◽  
Craig A. Fisher ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Anode Voltage ◽  
Silicon Layer ◽  
Turn On ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Transmission Electron ◽  
P Type ◽  
Bipolar Conduction

This paper describes the physical and electrical properties of a p-n Si/on-axis SiC vertical heterojunction rectifier. A thin 400nm p-type silicon layer was wafer-bonded to a commercial on-axis SiC substrate by room temperature hydrophilic wafer bonding. Transmission electron microscopy was used to identify the crystallographic orientation as (0001)SiC//(001)Si and to reveal an amorphous interfacial layer. Electrical tests performed on the p-n heterodiodes revealed that, after an additional 1000oC anneal, the rectifier exhibit remarkably low leakage current (10nA/cm2 at an anode voltage of V=-6V), improved on-resistance due to bipolar injection and a turn-on voltage close to the p-n heterojunction theoretical value of 2.4V.

Effect of Catalyst Thickness and Plasma Pretreatment on the Growth of Carbon Nanotubes and Their Field Emission Properties

2007 ◽  
Vol 7 (11) ◽  
pp. 3731-3735
Author(s):  
Hyung Soo Uh ◽  
Sang Sik Park ◽  
Byung Whan Kim
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Field Enhancement ◽  
Close Relation ◽  
Emission Current Density ◽  
Ni Catalyst ◽  
Emission Characteristics ◽  
Field Emission Properties ◽  
Turn On ◽  
Plasma Pretreatment

We demonstrated that the diameter and the density of carbon nanotubes (CNTs) which had a close relation to electric-field-screening effect could be easily changed by the control of catalytic Ni thickness combined with NH3 plasma pretreatment. Since the diameter and the density of CNTs had a tremendous impact on the field-emission characteristics, optimized thickness of catalyst and application of plasma pretreatment greatly improved the emission efficiency of CNTs. In the field emission test using diode-type configuration, well-dispersed thinner CNTs exhibited lower turn-on voltage and higher field enhancement factor than the densely-packed CNTs. A CNT film grown using a plasma-pretreated 25 Å-thick Ni catalyst showed excellent field emission characteristics with a very low turn-on field of 1.1 V/μm @ 10 μA/cm2 and a high emission current density of 1.9 mA/cm2 @ 4.0 V/μm, respectively.

Novel Method of Growing Ultrananocrystalline Diamond Tips and Their Field Emission Property Study

2008 ◽  
Vol 8 (8) ◽  
pp. 4198-4201 ◽  
Author(s):  
P. T. Joseph ◽  
Li-Ju Chen ◽  
Nyan-Hwa Tai ◽  
Umesh Palnitkar ◽  
Hsiu-Fung Cheng ◽  
...  
Keyword(s):  
Field Emission ◽  
Field Enhancement ◽  
Emission Sources ◽  
Insulating Materials ◽  
Field Emission Properties ◽  
Turn On ◽  
Field Emitters ◽  
Ultrananocrystalline Diamond ◽  
Novel Method

Different forms of diamond have been shown to have qualities as field emission sources. As a consequence, much effort has been focused on both the synthesis of diamond nanostructures to increase the field enhancement factor and understanding the emission mechanism in these nominally insulating materials. In our recent study, we have grown ultrananocrystalline diamond (UNCD) coated nanocrystalline diamond (NCD) tips on NCD films for field emitters. The films were characterized using field emission scanning electron microscopy and Raman spectroscopy to identify the quality of the films. The fabricated different sizes of pyramid tips and their field emission properties are reported. It has been observed that with increase in tip size, the turn on voltage also increases.

scholarly journals Synthesis and characterization of a new ZIF-67@MgAl2O4 nanocomposite and its adsorption behaviour

RSC Advances ◽  
2021 ◽  
Vol 11 (22) ◽  
pp. 13245-13255
Author(s):  
Mehdi Davoodi ◽  
Fatemeh Davar ◽  
Mohammad R. Rezayat ◽  
Mohammad T. Jafari ◽  
Mehdi Bazarganipour ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnesium Aluminate ◽  
Synthesis And Characterization ◽  
Magnesium Aluminate Spinel ◽  
Adsorption Behaviour ◽  
Zeolitic Imidazolate Framework ◽  
Simple Method

New nanocomposite of zeolitic imidazolate framework-67@magnesium aluminate spinel (ZIF-67@MgAl2O4) has been fabricated by a simple method at room temperature with different weight ratios.

scholarly journals EPR Spectra of Sintered Cd1−xCrxTe Powdered Crystals with Various Cr Content

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3449
Author(s):  
Ireneusz Stefaniuk ◽  
Werner Obermayr ◽  
Volodymyr D. Popovych ◽  
Bogumił Cieniek ◽  
Iwona Rogalska
Keyword(s):  
Curie Temperature ◽  
Room Temperature ◽  
Integral Intensity ◽  
Resonance Field ◽  
Epr Spectra ◽  
Paramagnetic Resonance ◽  
Simple Method ◽  
Paramagnetic Curie Temperature ◽  
Cr Content ◽  
Electron Paramagnetic

In this paper, we show a simple method of producing ferromagnetic materials with a Curie temperature above room temperature. The electron paramagnetic resonance (EPR) spectra of Cd1−xCrxTe (0.002 < x < 0.08) were measured with a dependence on temperature (82 K < T < 381 K). Obtained EPR lines were fitted to a Lorentz-shaped curve. The temperature dependencies of the parameters of the EPR lines, such as the peak-to-peak linewidth (Hpp), the intensity (A), as well as the resonance field (Hr), were studied. Ferromagnetism was noticed in samples at high temperatures (near room temperature). For a sample with a nominal concentration of chrome of x = 0.05, a very strong intrinsic magnetic field is observed. The value of the effective gyromagnetic factor for this sample is ge = 30 at T = 240 K. An increase of chrome concentration above x = 0.05 reduces the ferromagnetic properties considerably. Analysis of the temperature dependencies of the integral intensity of EPR spectra was carried out using the Curie–Weiss law and the paramagnetic Curie temperature was obtained.

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