Seebeck Coefficient of Ge-on-Insulator Layers Fabricated by Direct Wafer Bonding Process

2015 ◽  
Vol 1117 ◽  
pp. 94-97 ◽  
Author(s):  
Veerappan Manimuthu ◽  
Shoma Yoshida ◽  
Yuhei Suzuki ◽  
Faiz Salleh ◽  
Mukannan Arivanandhan ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Wafer Bonding ◽  
Annealing Effect ◽  
Bonding Process ◽  
Infrared Photodetector ◽  
Si Substrate ◽  
Temperature Range ◽  
Direct Wafer Bonding ◽  
Insulator Layers ◽  
P Type

We investigate thermoelectric characteristics of SiGe nanostructures for realizing high-sensitive infrared photodetector applications. In this paper, for future Ge and SiGe nanowires, we fabricate p-type Ge-on-insulator (GOI) substrates by a direct wafer bonding process. We discuss the annealing effect on the GOI substrate in the process and measure its Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is almost identical with the reported values for Ge. This result confirms that the measured Seebeck coefficient of GOI layers is not influenced by the buried oxide (BOX) layer and the Si substrate.

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

scholarly journals Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

2015 ◽  
Vol 19 (1) ◽  
pp. 21 ◽  
Author(s):  
Veerappan Manimuthu ◽  
Shoma Yoshida ◽  
Yuhei Suzuki ◽  
Faiz Salleh ◽  
Mukannan Arivanandhan ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Phonon Drag ◽  
Insulator Substrate

The Effect of Rh and Sr Substitution on the Thermoelectric Performance of LaCoO3

2010 ◽  
Vol 1267 ◽  
Author(s):  
Kyei-Sing Kwong ◽  
Andrew E Smith ◽  
Mas Subramanian
Keyword(s):  
Crystal Structure ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Component System ◽  
Temperature Range ◽  
Seebeck Coefficients ◽  
Lower Temperature Range ◽  
Lower Temperature ◽  
P Type

AbstractA series of LaCo1-xRhxO3 (x=0-1) samples and La1-ySryCo1-xRhxO3 (y = 0.05, 0.15 and x = 0.1-0.3) samples were prepared to study the effect of Rh substituion for Co in the four component system and Sr substitution for La in the five component system on the crystal structure and thermoelectric performance of the LaCoO3. At Rh substitution for Co of x=0.2 greater, the crystal structure shifts from rhombohederal (LaCoO3) to orthorhombic (LaRhO3). Thermoelectric evaluation revealed that Rh doped samples (0.3 <x <1) show large positive seebeck coefficients indicating a P-type conduction in the temperature range of the tests (273 to 775K). Rh substitution for Co decreases thermal conductivity, increases Seebeck coefficient and consequently increases the theroelectric figure of merit ZT. Sr substitution for La increases thermal and electrical conductivity and consquenently negligiblely decreases the seebeck coefficient. A thermoelectric figure-of-merit (ZT) around 0.075 has been achieved for LaCo0.5Rh0.5O3 at 775 K, and is expected to be above 0.1 at 1000 K. Sr substitution improved the TE properties throughout the lower temperature range with a ZT =0.045 observed for La0.95Sr0.05Co0.9Rh0.1O3 at 425 K and ZT = 0.05 for La0.85Sr0.15Co0.5Rh0.5O3 at 775 K. These findings provide new insight into thermoelectric perovskite oxides containing rhodium and strontium.

Thermoelectric behaviour of p- and n- type Ti-Ni-Sn half Heusler alloy variants and their amorphous equivalents

2013 ◽  
Vol 1490 ◽  
pp. 33-40
Author(s):  
Song Zhu ◽  
Satish Vitta ◽  
Terry M. Tritt
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Heusler Alloys ◽  
Strong Temperature Dependence ◽  
Total Thermal Conductivity ◽  
Temperature Range ◽  
Transport Behaviour ◽  
Increasing Temperature ◽  
P Type ◽  
Amorphous Phase Formation

ABSTRACTTi-Ni-Sn type half-Heusler alloys which have the versatility to be either p- or n-type depending on the type of substitution, have been synthesized and investigated in the present work. The added advantage of doping them with multiple elements is that they will be amenable to bulk amorphous phase formation. The hole doped alloys were predominantly single phase with a cubic structure, while the electron doped alloys were found to have minor additional phases. All the alloys exhibit extremely weak metallic-like or degenerate semiconductor transport behaviour in the temperature range 20 K to 1000 K. The resistivity of p-type alloys exhibits semi-metallic-to-semiconducting transition at ∼ 500 K while the n-type alloys exhibit a weak metallic-like behaviour in the complete temperature range. The Seebeck coefficient has strong temperature dependence with a maximum of 45 μV K−1 in the temperature range 600-700 K in the p-type alloys. The n-type alloys however exhibit a linear variation of the Seebeck coefficient with temperature. The total thermal conductivity of the alloys increases with increasing temperature without any peak at low temperatures indicating significant disorder induced scattering. The p-type alloys have the lowest thermal conductivity compared to the n-type alloys. These alloys become amorphous after pulsed laser deposition except one alloy which exhibits compensated transport behaviour.

Fabrication of high quality, thin Ge-on-insulator layers by direct wafer-bonding for nanostructured thermoelectric devices

2017 ◽  
Vol 32 (3) ◽  
pp. 035021 ◽  
Author(s):  
Manimuthu Veerappan ◽  
Arivanandhan Mukannan ◽  
Faiz Salleh ◽  
Yosuke Shimura ◽  
Yasuhiro Hayakawa ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Thermoelectric Devices ◽  
High Quality ◽  
Direct Wafer Bonding ◽  
Insulator Layers

scholarly journals InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

2017 ◽  
Vol 25 (15) ◽  
pp. 17562 ◽  
Author(s):  
HoSung Kim ◽  
Seung-Yeop Ahn ◽  
SangHyeon Kim ◽  
GeunHwan Ryu ◽  
Ji Hoon Kyhm ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Infrared Photodetector ◽  
Si Substrate ◽  
Quantum Dot Infrared Photodetector ◽  
Lift Off ◽  
Gaas Quantum Dot

Fabrication of Strained Silicon on Insulator (SSOI) by Direct Wafer Bonding Using Thin Relaxed SiGe Film as Virtual Substrate

2004 ◽  
Vol 809 ◽  
Author(s):  
J.J. Lee ◽  
J.S. Maa ◽  
D. J. Tweet ◽  
S.T. Hsu
Keyword(s):  
Wafer Bonding ◽  
Lattice Relaxation ◽  
Channel Length ◽  
Silicon On Insulator ◽  
Si Substrate ◽  
Strained Si ◽  
Drive Current ◽  
Defect Zone ◽  
Direct Wafer Bonding ◽  
Strained Sige

ABSTRACTNMOS devices have been successfully fabricated on SSOI wafers. The SSOI wafer fabrication is by direct wafer bonding and wafer transfer by splitting of the strained Si on thin SiGe virtual substrate to an oxidized wafer. The thin SiGe virtual substrate is fabricated by strained SiGe deposition, H2+ implantation, and SiGe lattice relaxation anneal. This relaxation process creates a confined defect zone at the SiGe to Si substrate interface that ensures low defect strained Si growth. 10 μm by 10 μm NMOS SSOI devices show an improvement of 100% in drive current and 115% in transconductance. A near ideal subthreshold swing was observed on NMOS devices with channel length as short as 0.1 μm.

Significant Influences of Selenium on the Electrical Properties of Bi2Te3 Compounds Synthesized Using Solid-State Microwave Irradiation

2012 ◽  
Vol 501 ◽  
pp. 126-128 ◽  
Author(s):  
Arej Kadhim ◽  
Arshad Hmood ◽  
Abu Hassan Haslan
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Microwave Irradiation ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Microwave Synthesis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
P Type

The thermoelectric materials based on p-type Bi2Se3xTe3 (1-x) bulk products and dispersed with x compositions of Se (x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0) were fabricated using standard solid-state microwave synthesis procedures. The products were characterized by X-ray diffraction (XRD). The XRD characterizations revealed that these products are pure Bi2Te3 and Bi2Se3 with uniform structures. The electrical properties of the Bi2Te3, Bi2Se3 and Bi2Se3xTe3 (1-x) samples were measured in the temperature range of 303–523 K. The highest value of the Seebeck coefficient was 176.3 μV/ K for the Bi2Se0.6Te2.4 sample, but only 149.5 and 87.4 μV/K for the Bi2Te3 and Bi2Se3 samples, respectively.

Effect of nanoscale surface topography on low temperature direct wafer bonding process with UV activation

2009 ◽  
Vol 151 (1) ◽  
pp. 81-86 ◽  
Author(s):  
Zirong Tang ◽  
Ping Peng ◽  
Tielin Shi ◽  
Guanglan Liao ◽  
Lei Nie ◽  
...  
Keyword(s):  
Low Temperature ◽  
Surface Topography ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Direct Wafer Bonding
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