Type-II GaSb/GaAs Nanostructures Grown by Droplet Epitaxy with Various Ga Amounts
2015 ◽
Vol 1131
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pp. 60-63
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Keyword(s):
Type Ii
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We study the GaSb/GaAs nanostructures (NSs) grown by droplet epitaxy technique with various Ga amounts. Ga amount deposited on the GaAs (001) substrate was varied between 3-5 ML to form the different size and density of liquid Ga droplets. The Sb flux was subsequently irradiated to crystallize the droplets. Morphology of GaSb NSs was investigated by atomic force microscopy (AFM). Quantum rings were obtained after crystallizing 3-ML Ga droplets, whereas some kind of quantum dots were formed after crystallizing 4-and 5-ML Ga droplets. The formation mechanisms leading to the different structure are discussed. The photoluminescence (PL) measurement was performed to examine the optical properties of GaSb/GaAs NSs.
Keyword(s):
1993 ◽
Vol 212
(1-2)
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pp. 50-56
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Atomic Force Microscopy Studies of DNA-Wrapped Carbon Nanotube Structure and Binding to Quantum Dots
2008 ◽
Vol 130
(32)
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pp. 10648-10655
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Keyword(s):
2008 ◽
Vol 2007.20
(0)
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pp. 83-84
Keyword(s):
Keyword(s):
Surface morphology of self-assembled vertically stacked InAs quantum dots by atomic force microscopy
2005 ◽
Vol 105
(1-4)
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pp. 125-128
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Keyword(s):