The Effects of Reaction Temperature on the Morphology and the Quality of the Carbon Nanotube - Silica Microparticles

2016 ◽  
Vol 1133 ◽  
pp. 467-470
Author(s):  
Raja Nor Othman ◽  
Arthur N. Wilkinson
Keyword(s):  
Carbon Nanotube ◽  
Reaction Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Growth Time ◽  
Hybrid Particles ◽  
Spherical Silica ◽  
Silica Microparticles

Carbon nanotube has been successfully grafted on the surface of spherical silica gel via floating-catalyst chemical vapour deposition method. The growth conditions were set to be 3 hours growth time and 5 wt. % of ferrocene catalyst (dissolved in toluene) injected into the furnace at a rate of 0.04 ml/min. It was found that the reaction temperature of 760°C yields the best quality hybrid particles. Decreasing and increasing the reaction temperature resulted in the formation of product that consists of thicker tubes, higher defects as analysed by Raman, as well as least carbon formation.

PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
H. Angerer ◽  
O. Ambacher ◽  
R. Dimitrov ◽  
Th. Metzger ◽  
W. Rieger ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metalorganic Chemical Vapour Deposition

Thin films of GaN on c-plane sapphire were grown by plasma-enhanced molecular beam epitaxy (PEMBE). The influence of different growth conditions on the quality of the epitaxial layers was studied by x-ray diffraction (XRD), atomic force microscopy (AFM) and Hall measurements. For low deposition temperatures, the growth of a thin buffer layer of AlN results in a decrease of the XRD rocking curve full width at half maximum (FWHM) but also in poorer quality in electronic and optical properties. Samples of 3μm thickness with 570 arcsec FWHM in the XRD rocking curve, a near band gap PL-emission FWHM at 5 K of 7 meV, charge carrier densities of ne = 2 × 1017 cm−3, and Hall mobilities of 270 cm2/Vs at 300 K were grown without a buffer layer. A comparison of the morphology and XRD rocking curves with those of GaN films deposited by metalorganic chemical vapour deposition (MOCVD) shows that the two methods have different growth mechanisms.

scholarly journals Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates

Catalysts ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1318
Author(s):  
Maryam A. Saeed ◽  
Ian A. Kinloch ◽  
Brian Derby
Keyword(s):  
Atmospheric Pressure ◽  
Defect Density ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Growth Time ◽  
Graphene Growth ◽  
Graphene Films ◽  
Reactive Gases

Liquid substrates are great candidates for the growth of high-quality graphene using chemical vapour deposition (CVD) due to their atomically flat and defect free surfaces. A detailed study of graphene growth using atmospheric pressure CVD (APCVD) on liquid indium (In) was conducted. It was found that the effect of the growth parameters on the quality of the graphene produced is highly dependent on the properties of the substrate used. A short residence time of 6.8 sec for the reactive gases led to a high graphene quality, indicating the good catalytic behaviour of In. The role of hydrogen partial pressure was found to be crucial, with monolayer and bilayer graphene films with a low defect density obtained at low PH2 (38.6 mbar), whilst more defective, thicker graphene films with a partial coverage being obtained at high PH2 (74.3 mbar). The graphene deposition was insensitive to growth time as the graphene growth on liquid In was found to self-limit to bilayer. For further investigation, five compositions of Cu-In alloys were made by arc-melting. Graphene was then grown using the optimum conditions for In and the quality of the graphene was found to degrade with increasing Cu wt.%. This work will aid the future optimisation of the growth conditions based upon the substrate’s properties.

Rbs and Pixe Analysis Of Hg1-xCdxTe grown by MOCVD.

1990 ◽  
Vol 216 ◽  
Author(s):  
S.P. Russo ◽  
R.G. Elliman ◽  
P.N. Johnston ◽  
G.N. Pain
Keyword(s):  
Gas Flow ◽  
Vapour Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pixe Analysis ◽  
Mocvd Reactor ◽  
Metal Organic ◽  
Thickness Variations

ABSTRACTThe techniques, Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) have been used to investigate compositional and thickness uniformity of Hg1-xCdxTe (MCT) grown on GaAs substrates by Metal Organic Chemical Vapour Deposition (MOCVD). Composition and thickness variations are reported for orientations perpendicular and parallel to gas flow in the MOCVD reactor. Crystalline quality of the MCT layer was also determined by RBS channelling analysis.

Influence of Diamond CVD Growth Conditions and Interlayer Material on Diamond/GaN Interface

2015 ◽  
Vol 821-823 ◽  
pp. 982-985 ◽  
Author(s):  
Tibor Izak ◽  
Oleg Babchenko ◽  
Vít Jirásek ◽  
Gabriel Vanko ◽  
Marián Vojs ◽  
...  
Keyword(s):  
Diamond Film ◽  
Film Formation ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
High Ratio ◽  
Cvd Growth ◽  
Chemical Character ◽  
Thin Interlayer

In this study we present the diamond deposition on AlGaN/GaN substrates focusing on the quality of the diamond/GaN interface. The growth of diamond films was performed using microwave chemical vapour deposition system in different gas mixtures: standard CH4/H2(at low and high ratio of CH4to H2) and addition of CO2to CH4/H2gas chemistry. The diamond films were grown directly on GaN films either without or with thin interlayer. As interlayer, 100 nm thick Si3N4was used. Surprisingly, in the case of standard CH4/H2gas mixture, no diamond film was observed on the GaN with SiN interlayer, while adding of CO2resulted in diamond film formation of both samples with and without SiN interlayer. Moreover, adding of CO2led to higher growth rate. The morphology of diamond films and the quality of the diamond/GaN interface was investigated from the cross-section images by scanning electron microscopy and the chemical character (i.e. sp3versus sp2carbon bonds) was measured by Raman spectroscopy.

Carbon nanotube junctions obtained by pulsed liquid injection chemical vapour deposition

2010 ◽  
Vol 19 (7-9) ◽  
pp. 1052-1057 ◽  
Author(s):  
A.G. Garcia ◽  
M.J. Duarte Correa ◽  
J.F. Perez Robles ◽  
A.H. Romero ◽  
C. Velasco-Santos ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Liquid Injection ◽  
Carbon Nanotube Junctions
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