Enhancement on the Electrical Properties of PVDF/MgO Nanocomposite Thin Films

2015 ◽  
Vol 1134 ◽  
pp. 16-22
Author(s):  
Adillah Nurashikin Arshad ◽  
Rozana Mohd Dahan ◽  
Mohamad Hafiz Mohd Wahid ◽  
Muhamad Naiman Sarip ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Frequency ◽  
Annealed Sample ◽  
High Resistivity ◽  
Tangent Loss ◽  
Annealing Temperatures ◽  
Metal Insulator Metal ◽  
Nanocomposite Thin Films ◽  
Tan Δ

Poly (vinylideneflouride)/nanomagnesium oxide (PVDF/MgO) film with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70°C to 170°C. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with metal-insulator-metal (MIM) configuration and the dielectric constant of PVDF/MgO(7%) with respect to annealing temperatures was studied. The PVDF/MgO nanocomposite thin films annealed at temperature of 70°C (AN70) showed an improvement in the dielectric constant of 27 at 103 Hz compared to un-annealed sample (UN), which is 21 at the same frequency. As the annealing temperatures were increased from 90°C (AN90) to 150oC (AN150), the dielectric constant of PVDF/MgO(7%) were found to gradually decreased from 25 to 12 respectively, interestingly lower than the UN thin films. AN70 also produced low value of tangent loss (tan δ) at frequency of 103 Hz. The resistivity value of AN70 was also found to increase from 3.08×104Ω.cm (UN-PVDF) to 1.05×105Ω.cm. The increased in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C was the favourable annealing temperature for PVDF/MgO(7%) for application in electronic devices such as low frequency capacitor.

scholarly journals Electrical and Structural Properties of PVDF/Mgo (7%) Nanocomposites Thin Films at Various Annealing Temperatures

2017 ◽  
Vol 3 (1) ◽  
pp. 8 ◽  
Author(s):  
Rozana Mohd Dahan ◽  
Arshad A.N. ◽  
Wahid M.H. ◽  
Sarip M.N. ◽  
Rusop M.
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electronic Devices ◽  
Low Frequency ◽  
Annealed Sample ◽  
High Resistivity ◽  
Tangent Loss ◽  
Annealing Temperatures ◽  
Metal Insulator Metal ◽  
Tan Δ

Abstract—Poly (vinylideneflouride)/nano-magnesium oxide (PVDF/MgO) film with 7% MgO loading percentage was annealed at various annealing temperatures ranging from 70°C to 150°C. The PVDF/MgO thin film was fabricated using spin coating technique with a metal-insulator-metal (MIM) configuration. The dielectric and electric properties of PVDF/MgO with respect to annealing temperatures was studied. The PVDF/MgO nanocomposites thin films annealed at temperature of 70°C (AN70-PVDF/MgO) showed an improvement in the properties; dielectric constant value of 26 at 1 kHz frequency compared to un-annealed sample (UN-PVDF/MgO), which is 21 at the same frequency. As the annealing temperatures were increased from 90°C (AN90) to 150°C (AN150-PVDF/MgO), the dielectric constant values were found to gradually decreased from 25 to 12 respectively, which was lower than the UN-PVDF/MgO thin films. AN70-PVDF/MgO also produced relatively low tangent loss (tan δ). The resistivity value of AN70-PVDF/MgO was also found to increase from 3.08x104 Ω.cm (UN- PVDF/MgO) to 4.55x104 Ω.cm. The increased in the dielectric constant, with low tangent loss and high resistivity value suggests that 70°C was the favorable annealing temperature for PVDF/MgO film suitable for the application in electronic devices such as low frequency capacitor.

Dielectric Properties of PVDF/MgO Nanocomposites Thin Film with Various Annealing Temperatures

2013 ◽  
Vol 832 ◽  
pp. 718-723 ◽  
Author(s):  
Adillah Nurashikin Arshad ◽  
Rozana Mohd Dahan ◽  
Mohamad Hafiz Mohd Wahid ◽  
Muhamad Naiman Sarip ◽  
Habibah Zulkefle ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Spin Coating ◽  
Low Frequency ◽  
Tangent Loss ◽  
Unannealed Sample ◽  
Annealing Temperatures ◽  
Wide Range ◽  
Rapid Removal

Poly (vinylideneflouride)/nanomagnesium oxide (PVDF/MgO) nanocomposites with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70oC to 170oC. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with MIM structure. The dielectric constant of PVDF/MgO(7%) was studied over a wide range of annealing temperatures with rapid removal from the oven once the annealing was utilized. The nanocomposites thin films annealed at temperature of 70oC (AN70) shows an improvement in the dielectric constant of 23 at 103 Hz compared to unannealed sample (UN), which was 21 at the same frequency. However, as the annealing temperatures were increased from 90oC (AN90) to 170o C (AN170), the dielectric constant of PVDF/MgO(7%) were found to decrease from 16 to 7 respectively, which were lower than the UN thin films. AN70 also produced low value of tangent loss at low frequency˼˰˸̱̈́̾˰δ˹˰̴̷̹̹̳̱̹̾̈́̾˰̸̱̈́̈́˼˰̵̷̱̱̼̹̾̾̾˰̱̈́˰temperatures 70oC is favourable temperature used to improve the dielectric constant of PVDF/MgO(7%).

Dielectric Behavior of PVDF/PP-PT Nanocomposite Thin Films

2014 ◽  
Vol 1002 ◽  
pp. 11-16
Author(s):  
Ting Ting Yu ◽  
Zhao Hui Ren ◽  
Si Min Yin ◽  
Xin Yang ◽  
Yi Feng Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Vinylidene Fluoride ◽  
Low Frequency ◽  
Weight Ratio ◽  
Dielectric Behavior ◽  
Β Phase ◽  
Nanocomposite Thin Films ◽  
Coating Method

PVA/PVP-assisted hydrothermal method was used to prepare single-crystal pre-perovskite PbTiO3(PP-PT) nanofibers, in which polyvinyl alcohol (PVA) and polyvinyl pyrrolidone (PVP) acted as surfactants. Subsequently, poly (vinylidene fluoride)/ pre-perovskite PbTiO3nanofibers (PVDF/PP-PT) nanocomposite thin films were successfully fabricated by a spin-coating method. The test results showed that PP-PT nanofibers had a good distribution in PVDF matrix. Moreover, α-phase coexisted with β-phase in the PVDF and PVDF/PP-PT nanocomposite thin films. The dielectric properties of the PVDF/PP-PT nanocomposite thin films were measured as a function of frequency in the range of 5 kHz to 5 MHz. It is worth noting that the dielectric constant of nanocomposite thin films increased with increasing the weight ratio of PP-PT nanofibers in the low frequency range. By contrast, the dielectric constant of PVDF/PP-PT nanocomposite thin film which contained 20% PP-PT nanofibers was 43.7% larger than that of pure PVDF thin film (εr= 6.77) at 5 kHz, and the loss tangent was ~0.03.

The Effect of Annealing Temperatures on the Dielectric Constant of PVDF/MgO Nanocomposites Thin Films

2014 ◽  
Vol 895 ◽  
pp. 221-225 ◽  
Author(s):  
Adillah Nurashikin Arshad ◽  
Rozana Mohd Dahan ◽  
Mohamad Hafiz Mohd Wahid ◽  
Muhamad Naiman Sarip ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Magnesium Oxide ◽  
Low Frequency ◽  
Unannealed Sample ◽  
Annealing Temperatures ◽  
Β Phase ◽  
Rapid Removal

Poly(vinylidene flouride)/nano-magnesium oxide (PVDF/MgO) nanocomposites with MgO loading percentage of (7% wt. %) were annealed with various annealing temperatures ranging from 70°C to 170°C with rapid removal from the oven. From dielectric constant, the samples annealed at temperature of 70°C showed an improvement in the dielectric constant from 21 to 23 at frequency 103 Hz for UN and AN70 respectively. However, as the temperatures were increased, the dielectric constant of PVDF/MgO (7%) was found to decrease. XRD showed the presence of β-phase for PVDF/MgO(7%) sample annealed at 70°C in comparison to unannealed sample, hence PVDF/MgO(7%) film is suitable to be used for low frequency capacitor application.

ON THE DIELECTRIC BEHAVIOR OF LiCo3/5Fe2/5VO4 CERAMICS

2010 ◽  
Vol 24 (07) ◽  
pp. 665-670
Author(s):  
MOTI RAM
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Frequency Dependence ◽  
Chemical Method ◽  
Arrhenius Plot ◽  
Dielectric Behavior ◽  
Tangent Loss ◽  
Low Frequencies ◽  
Different Temperatures ◽  
Tan Δ

The LiCo 3/5 Fe 2/5 VO 4 ceramics has been fabricated by solution-based chemical method. Frequency dependence of the dielectric constant (εr) at different temperatures exhibits a dispersive behavior at low frequencies. Temperature dependence of εr at different frequencies indicates the dielectric anomalies in εr at Tc (transition temperature) = 190°C, 223°C, 263°C and 283°C with (εr) max ~ 5370, 1976, 690 and 429 for 1, 10, 50 and 100 kHz, respectively. Frequency dependence of tangent loss ( tan δ) at different temperatures indicates the presence of dielectric relaxation in the material. The value of activation energy estimated from the Arrhenius plot of log (τd) with 103/T is ~(0.396 ± 0.012) eV.

Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

1997 ◽  
Vol 476 ◽  
Author(s):  
C.T. Rosenmaver ◽  
J. W. Bartz ◽  
J. Hammes
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Strength ◽  
Low Dielectric Constant ◽  
Thermal Treatments ◽  
Test Results ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Thickness Standard ◽  
High Dielectric

AbstractPrevious work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel

2011 ◽  
Vol 277 ◽  
pp. 1-10 ◽  
Author(s):  
D. Fasquelle ◽  
M. Mascot ◽  
J.C. Carru
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Annealing Time ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Annealing Conditions ◽  
Average Size

This paper reports a study of Ba0.9Sr0.1TiO3films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: εr= 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

scholarly journals Precision Permittivity Measurement for Low-Loss Thin Planar Materials Using Large Coaxial Probe from 1 to 400 MHz

2018 ◽  
Vol 2 (4) ◽  
pp. 81
Author(s):  
Kok Yeow You ◽  
Man Seng Sim
Keyword(s):  
Dielectric Constant ◽  
Dielectric Measurement ◽  
Tangent Loss ◽  
Outer Diameter ◽  
Low Loss ◽  
Probe Calibration ◽  
Lift Off ◽  
Tan Δ ◽  
Planar Materials ◽  
Coaxial Probe

This paper focuses on the non-destructive dielectric measurement for low-loss planar materials with a thickness of less than 3 mm using a large coaxial probe with an outer diameter of 48 mm. The aperture probe calibration procedure required only to make a measurement of the half-space air and three offset shorts. The reflection coefficient for the thin material is measured using a Keysight E5071C network analyzer from 0.3 MHz to 650 MHz and then converted to a relative dielectric constant, εr and tangent loss, tan δ via closed form capacitance model and lift-off calibration process. Average measurement error of dielectric constant, Δεr is less than 6% from 1 MHz to 400 MHz and the resolution of loss tangent, tan δ measurement is capable of achieving 10−3.

Sign in / Sign up

Export Citation Format

Share Document