Dielectric Properties of PVDF/MgO Nanocomposites Thin Film with Various Annealing Temperatures

2013 ◽  
Vol 832 ◽  
pp. 718-723 ◽  
Author(s):  
Adillah Nurashikin Arshad ◽  
Rozana Mohd Dahan ◽  
Mohamad Hafiz Mohd Wahid ◽  
Muhamad Naiman Sarip ◽  
Habibah Zulkefle ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Spin Coating ◽  
Low Frequency ◽  
Tangent Loss ◽  
Unannealed Sample ◽  
Annealing Temperatures ◽  
Wide Range ◽  
Rapid Removal

Poly (vinylideneflouride)/nanomagnesium oxide (PVDF/MgO) nanocomposites with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70oC to 170oC. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with MIM structure. The dielectric constant of PVDF/MgO(7%) was studied over a wide range of annealing temperatures with rapid removal from the oven once the annealing was utilized. The nanocomposites thin films annealed at temperature of 70oC (AN70) shows an improvement in the dielectric constant of 23 at 103 Hz compared to unannealed sample (UN), which was 21 at the same frequency. However, as the annealing temperatures were increased from 90oC (AN90) to 170o C (AN170), the dielectric constant of PVDF/MgO(7%) were found to decrease from 16 to 7 respectively, which were lower than the UN thin films. AN70 also produced low value of tangent loss at low frequency˼˰˸̱̈́̾˰δ˹˰̴̷̹̹̳̱̹̾̈́̾˰̸̱̈́̈́˼˰̵̷̱̱̼̹̾̾̾˰̱̈́˰temperatures 70oC is favourable temperature used to improve the dielectric constant of PVDF/MgO(7%).

The Effect of Annealing Temperatures on the Dielectric Constant of PVDF/MgO Nanocomposites Thin Films

2014 ◽  
Vol 895 ◽  
pp. 221-225 ◽  
Author(s):  
Adillah Nurashikin Arshad ◽  
Rozana Mohd Dahan ◽  
Mohamad Hafiz Mohd Wahid ◽  
Muhamad Naiman Sarip ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Magnesium Oxide ◽  
Low Frequency ◽  
Unannealed Sample ◽  
Annealing Temperatures ◽  
Β Phase ◽  
Rapid Removal

Poly(vinylidene flouride)/nano-magnesium oxide (PVDF/MgO) nanocomposites with MgO loading percentage of (7% wt. %) were annealed with various annealing temperatures ranging from 70°C to 170°C with rapid removal from the oven. From dielectric constant, the samples annealed at temperature of 70°C showed an improvement in the dielectric constant from 21 to 23 at frequency 103 Hz for UN and AN70 respectively. However, as the temperatures were increased, the dielectric constant of PVDF/MgO (7%) was found to decrease. XRD showed the presence of β-phase for PVDF/MgO(7%) sample annealed at 70°C in comparison to unannealed sample, hence PVDF/MgO(7%) film is suitable to be used for low frequency capacitor application.

Enhancement on the Electrical Properties of PVDF/MgO Nanocomposite Thin Films

2015 ◽  
Vol 1134 ◽  
pp. 16-22
Author(s):  
Adillah Nurashikin Arshad ◽  
Rozana Mohd Dahan ◽  
Mohamad Hafiz Mohd Wahid ◽  
Muhamad Naiman Sarip ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Frequency ◽  
Annealed Sample ◽  
High Resistivity ◽  
Tangent Loss ◽  
Annealing Temperatures ◽  
Metal Insulator Metal ◽  
Nanocomposite Thin Films ◽  
Tan Δ

Poly (vinylideneflouride)/nanomagnesium oxide (PVDF/MgO) film with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70°C to 170°C. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with metal-insulator-metal (MIM) configuration and the dielectric constant of PVDF/MgO(7%) with respect to annealing temperatures was studied. The PVDF/MgO nanocomposite thin films annealed at temperature of 70°C (AN70) showed an improvement in the dielectric constant of 27 at 103 Hz compared to un-annealed sample (UN), which is 21 at the same frequency. As the annealing temperatures were increased from 90°C (AN90) to 150oC (AN150), the dielectric constant of PVDF/MgO(7%) were found to gradually decreased from 25 to 12 respectively, interestingly lower than the UN thin films. AN70 also produced low value of tangent loss (tan δ) at frequency of 103 Hz. The resistivity value of AN70 was also found to increase from 3.08×104Ω.cm (UN-PVDF) to 1.05×105Ω.cm. The increased in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C was the favourable annealing temperature for PVDF/MgO(7%) for application in electronic devices such as low frequency capacitor.

scholarly journals Electrical and Structural Properties of PVDF/Mgo (7%) Nanocomposites Thin Films at Various Annealing Temperatures

2017 ◽  
Vol 3 (1) ◽  
pp. 8 ◽  
Author(s):  
Rozana Mohd Dahan ◽  
Arshad A.N. ◽  
Wahid M.H. ◽  
Sarip M.N. ◽  
Rusop M.
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electronic Devices ◽  
Low Frequency ◽  
Annealed Sample ◽  
High Resistivity ◽  
Tangent Loss ◽  
Annealing Temperatures ◽  
Metal Insulator Metal ◽  
Tan Δ

Abstract—Poly (vinylideneflouride)/nano-magnesium oxide (PVDF/MgO) film with 7% MgO loading percentage was annealed at various annealing temperatures ranging from 70°C to 150°C. The PVDF/MgO thin film was fabricated using spin coating technique with a metal-insulator-metal (MIM) configuration. The dielectric and electric properties of PVDF/MgO with respect to annealing temperatures was studied. The PVDF/MgO nanocomposites thin films annealed at temperature of 70°C (AN70-PVDF/MgO) showed an improvement in the properties; dielectric constant value of 26 at 1 kHz frequency compared to un-annealed sample (UN-PVDF/MgO), which is 21 at the same frequency. As the annealing temperatures were increased from 90°C (AN90) to 150°C (AN150-PVDF/MgO), the dielectric constant values were found to gradually decreased from 25 to 12 respectively, which was lower than the UN-PVDF/MgO thin films. AN70-PVDF/MgO also produced relatively low tangent loss (tan δ). The resistivity value of AN70-PVDF/MgO was also found to increase from 3.08x104 Ω.cm (UN- PVDF/MgO) to 4.55x104 Ω.cm. The increased in the dielectric constant, with low tangent loss and high resistivity value suggests that 70°C was the favorable annealing temperature for PVDF/MgO film suitable for the application in electronic devices such as low frequency capacitor.

Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Coating Method

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.

Dielectric Behavior of PVDF/PP-PT Nanocomposite Thin Films

2014 ◽  
Vol 1002 ◽  
pp. 11-16
Author(s):  
Ting Ting Yu ◽  
Zhao Hui Ren ◽  
Si Min Yin ◽  
Xin Yang ◽  
Yi Feng Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Vinylidene Fluoride ◽  
Low Frequency ◽  
Weight Ratio ◽  
Dielectric Behavior ◽  
Β Phase ◽  
Nanocomposite Thin Films ◽  
Coating Method

PVA/PVP-assisted hydrothermal method was used to prepare single-crystal pre-perovskite PbTiO3(PP-PT) nanofibers, in which polyvinyl alcohol (PVA) and polyvinyl pyrrolidone (PVP) acted as surfactants. Subsequently, poly (vinylidene fluoride)/ pre-perovskite PbTiO3nanofibers (PVDF/PP-PT) nanocomposite thin films were successfully fabricated by a spin-coating method. The test results showed that PP-PT nanofibers had a good distribution in PVDF matrix. Moreover, α-phase coexisted with β-phase in the PVDF and PVDF/PP-PT nanocomposite thin films. The dielectric properties of the PVDF/PP-PT nanocomposite thin films were measured as a function of frequency in the range of 5 kHz to 5 MHz. It is worth noting that the dielectric constant of nanocomposite thin films increased with increasing the weight ratio of PP-PT nanofibers in the low frequency range. By contrast, the dielectric constant of PVDF/PP-PT nanocomposite thin film which contained 20% PP-PT nanofibers was 43.7% larger than that of pure PVDF thin film (εr= 6.77) at 5 kHz, and the loss tangent was ~0.03.

Structural, Optical and Electrical Characteristics of Polycrystalline ZnO Thin Film Prepared by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 24-29
Author(s):  
Mohamad Hafiz Mamat ◽  
A.A.A. Halim ◽  
Mohd Zainizan Sahdan ◽  
S. Amizam ◽  
Zuraida Khusaimi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Sem Images ◽  
Glass Substrates ◽  
Annealing Temperatures

The effect of annealing temperatures on the Zinc Oxide (ZnO) thin films properties has been investigated. 1.0 M ZnO solution was prepared by sol-gel method as coating solution for ZnO thin films deposition process. The thin films deposition was conducted by spin-coating technique on the silicon and glass substrates. The scanning electron microscopy (SEM) images reveal the evolution of ZnO surface morphology with annealing temperatures. The crystallinity improvement occurred at higher annealing temperature as shown by x-ray diffraction (XRD) result. The optical properties found to be varied at different annealing temperatures. The current-voltage (I-V) measurement results suggested the improvement of ZnO thin film electrical properties with annealing temperatures.

scholarly journals Synthesis and characterization of strontium-doped barium titanate thin film by dip and dry technique

2021 ◽  
pp. 2150002
Author(s):  
S. G. Chavan ◽  
A. N. Tarale ◽  
D. J. Salunkhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Complex Impedance ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Dip Coating ◽  
Morphological Properties ◽  
Constant Frequency

Thin films of polycrystalline (Ba[Formula: see text]Sr[Formula: see text]TiO3 ([Formula: see text] = 0.2 and 0.3) with Perovskite structure were prepared by a dip and dry technique on a platinum-coated silicon substrate. The good quality thin films with uniform microstructure and thickness were successfully produced by dip-coating techniques annealed at 730[Formula: see text]C for 1 h. The resulting thin film shows a well-developed dense polycrystalline structure with more uniform grain size distribution. The BST thin films were characterized for their structural, Raman spectroscopy, morphological properties, and complex impedance properties. The dielectric constant-frequency curve showed the good dielectric constant and loss dielectric loss with low-frequency dispersion. The BST 0.3 thin film reveals that the dielectric constant and dielectric loss at a frequency of 1 kHz were 578 and 0.02, respectively. The obtained results on dielectric properties can be analyzed in terms of the Maxwell–Wagner model.

Magneto-Optic Studies of GaN Films and GaN/AlGaN Heterostructures

1995 ◽  
Vol 395 ◽  
Author(s):  
Y.J. Wang ◽  
H.K. Ng ◽  
R. Kaplan ◽  
K. Doverspike ◽  
D.K. Gaskill ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Binding Energy ◽  
Free Electron ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Frequency ◽  
Electron Cyclotron ◽  
Si Doped

ABSTRACTMagneto-studies have been carried out for several MOCVD grown GaN thin films and GaN/AlGaN heterostructures at magnetic fields up to 30 T and at temperatures between 4.2 K to 100 K. Electron cyclotron resonance was observed in two heterostructures with high mobilities (μ > 2000 cm2/V-s), the effective mass obtained from the cyclotron resonance measurement is 0.23±0.01 m0, where m0 is the mass of free electron. For Si-doped thin film GaN there was no sign of electron cyclotron resonance even when samples were heated up to 100 K. However, a Is to 2p+ absorption line was observed for Si-doped GaN samples. A binding energy of 29 meV and low frequency dielectric constant of 10.4 is obtained.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

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