Surface Morphologies of PVDF-TrFE/MgO Nanocomposite Thin Films and its Effect on the Ferroelectric Properties

2015 ◽  
Vol 1134 ◽  
pp. 6-11 ◽  
Author(s):  
Mohamad Hafiz Mohd Wahid ◽  
Rozana Mohd Dahan ◽  
Siti Zaleha Sa'ad ◽  
Adillah Nurashikin Arshad ◽  
Muhamad Naiman Sarip ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Magnesium Oxide ◽  
Ferroelectric Properties ◽  
Filler Loading ◽  
Nanocomposite Thin Film ◽  
Nanocomposite Thin Films ◽  
Surface Morphologies

The enhancement of ferroelectric and dielectric properties of PVDF-TrFE by incorporating various percentages of Magnesium Oxide (1 – 7%) for spin coated nanocomposite thin film was demonstrated. Observations showed uniform distribution and low agglomeration of MgO in the PVDF-TrFE nanocomposite thin film, especially for 3% MgO. Additionally, the 3% MgO incorporated into PVDF-TrFE had generated the highest Pr (88 mC/m2) and dielectric constant (13.6) in comparison other percentage compositions. However, the addition of more than 3% MgO filler loading caused a reduction in the ferroelectric and dielectric properties of the nanocomposite thin films.

The Effects of La Concentration on the Properties of PLT Thin Films: From the Perspective of Dram Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Seong Jun Kang ◽  
Jeong Seon Ryoo ◽  
Yung Sup Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Current Density ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Lanthanum Titanate

ABSTRACTWe have studied the effects of La concentration on the dielectric and ferroelectric properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the dielectric and ferroelectric properties were greatly affected by the La concentration. The dielectric constants of the films varied from 340 to 870 with varying La concentration in the range from 15 to 33 mol%. Hysteresis loop became slimmer with the increase of La concentration from 15 to 28 mol% and a little fatter again with the increase of La concentration from 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film showed the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100 Hz, the dielectric constant and the loss tangent of PLT(28) thin film were 940 and 0.08, respectively. Its leakage current density at 1.5×10 V/cm was 1×10−6 A/cm2. The comparison between the simulated and the experimental curves for the switching transient characteristics showed that PLT(28) thin film behaved like normal dielectrics.

scholarly journals A tunable volatile organic compound sensor by using PtOx/GQDs/TiO2 nanocomposite thin films at room temperature under visible-light activation

RSC Advances ◽  
2017 ◽  
Vol 7 (63) ◽  
pp. 39859-39868 ◽  
Author(s):  
Shaofeng Shao ◽  
Yunyun Chen ◽  
Shenbei Huang ◽  
Fan Jiang ◽  
Yunfei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Visible Light ◽  
Gas Sensors ◽  
Room Temperature ◽  
Light Activation ◽  
Nanocomposite Thin Film ◽  
Nanocomposite Thin Films ◽  
Volatile Organic ◽  
Visible Light Activation

Pt/GQDs/TiO2 nanocomposite thin film-based gas sensors show tunable VOC sensing behaviour at room temperature under visible-light activation.

SrTiO3 and (Ba,Sr)TiO3 Thin Films Preparation by Ion Beam Sputtering and Their Dielectric Properties

1991 ◽  
Vol 243 ◽  
Author(s):  
Shintaro Yamamichi ◽  
Toshiyuki Sakuma ◽  
Takashi Hase ◽  
Yoichi Miyasaka
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Current Density ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sapphire Substrates ◽  
Capacitance Voltage ◽  
Beam Sputtering

AbstractSrTiO3 and (Ba,Sr)TiO3 thin films have been prepared by ion beam sputtering on Pd coated sapphire substrates. Film compositions were almost the same as target compositions when powder targets were used. Capacitance-voltage characteristics depended on Sr/Ti ratio of the SrTiO3 films. Only small changes of capacitance value were observed in the range from -3V to 3V when the Sr/Ti ratio was 1.0. Compared with rf-magnetron sputtered film, ion beam sputtered SrTiO3 film indicated lower leakage current density in 50nm thickness. In (Bax,Sr1-x)TiO3 thin films, dielectric constant changed with Ba content (x) and showed a maximum at x=0.5. It also changed with the firing temperature of target powder. The highest value was obtained by using the target powder fired at 900°C. A 100nm thick (Ba0.5,Sr0.5)TiO3 thin film indicated a dielectric constant value of 320.

Effect of a Boron Additive on the Microstructure and Dielectric Properties of BaTiO3 Thin Films Formed by Nanocrystal Deposition

2013 ◽  
Vol 566 ◽  
pp. 277-280
Author(s):  
Yoko Takezawa ◽  
Minoru Ryu ◽  
Yoshiki Iwazaki ◽  
Toshimasa Suzuki ◽  
Youichi Mizuno ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Grain Growth ◽  
Particle Sizes ◽  
Sintering Process ◽  
Mn Doped

Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

Dielectric Behavior of PVDF/PP-PT Nanocomposite Thin Films

2014 ◽  
Vol 1002 ◽  
pp. 11-16
Author(s):  
Ting Ting Yu ◽  
Zhao Hui Ren ◽  
Si Min Yin ◽  
Xin Yang ◽  
Yi Feng Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Vinylidene Fluoride ◽  
Low Frequency ◽  
Weight Ratio ◽  
Dielectric Behavior ◽  
Β Phase ◽  
Nanocomposite Thin Films ◽  
Coating Method

PVA/PVP-assisted hydrothermal method was used to prepare single-crystal pre-perovskite PbTiO3(PP-PT) nanofibers, in which polyvinyl alcohol (PVA) and polyvinyl pyrrolidone (PVP) acted as surfactants. Subsequently, poly (vinylidene fluoride)/ pre-perovskite PbTiO3nanofibers (PVDF/PP-PT) nanocomposite thin films were successfully fabricated by a spin-coating method. The test results showed that PP-PT nanofibers had a good distribution in PVDF matrix. Moreover, α-phase coexisted with β-phase in the PVDF and PVDF/PP-PT nanocomposite thin films. The dielectric properties of the PVDF/PP-PT nanocomposite thin films were measured as a function of frequency in the range of 5 kHz to 5 MHz. It is worth noting that the dielectric constant of nanocomposite thin films increased with increasing the weight ratio of PP-PT nanofibers in the low frequency range. By contrast, the dielectric constant of PVDF/PP-PT nanocomposite thin film which contained 20% PP-PT nanofibers was 43.7% larger than that of pure PVDF thin film (εr= 6.77) at 5 kHz, and the loss tangent was ~0.03.

scholarly journals Optical, Electrical, and Surface Properties of Cu/Plasma Polymer Fluorocarbon Nanocomposite Thin Film Fabricated Using Metal/Polymer Composite Target

2019 ◽  
Vol 9 (7) ◽  
pp. 1296 ◽  
Author(s):  
Sung Kim ◽  
Mac Kim ◽  
Jae Park ◽  
Sang-Jin Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polymer Composite ◽  
Plasma Polymer ◽  
Nanocomposite Thin Film ◽  
Power Sources ◽  
X Ray ◽  
Dc Power ◽  
Nanocomposite Thin Films ◽  
Metal Polymer

We propose a new method of fabricating metal–polymer composite targets for sputtering, which makes it easier to control the composition and enables the homogeneous and reproducible fabrication of metal–polymer nanocomposites over large areas. Using Cu/polytetrafluoroethylene composite targets containing 20, 50, and 80 wt.% Cu, Cu/plasma polymer fluorocarbon (PPFC) nanocomposite thin films were prepared by radio-frequency (RF) sputtering. Targets with 80 wt.% Cu were conductive; moreover, sputtering was possible not only with RF but also with mid-range frequency (MF) and direct current (DC) power sources. The nanocomposite thin film deposited by MF and DC power using an 80 wt.% Cu target showed near-metallic characteristics, exhibited absorption peaks at 618 and 678 nm, and had a surface resistance of 2 × 104 and 34.55 Ω/sq, respectively. We also analyzed the structure and composition of the Cu/PPFC nanocomposite films by X-ray diffraction and X-ray photoelectron spectroscopy. The described metal–polymer targets can advance the applications and commercialization of nanocomposite thin films.

scholarly journals Editorial for the Special Issue on “10th Anniversary of Nanomaterials—Recent Advances in Nanocomposite Thin Films and 2D Materials”

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2069
Author(s):  
Jordi Sort ◽  
Gemma Rius
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
2D Materials ◽  
Wide Spectrum ◽  
Nanocomposite Thin Film ◽  
Special Issue ◽  
10Th Anniversary ◽  
Research Challenges ◽  
Nanocomposite Thin Films ◽  
Original Works

As a way to celebrate the 10th anniversary of the journal Nanomaterials, this Special Issue within the section ‘Nanocomposite thin film and 2D materials’ provides an overview of the wide spectrum of research challenges and applications in the field, represented by a collection of 12 contributions, including three up-to-date review articles plus nine original works, in different targeted topics as described below [...]

scholarly journals Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

Membranes ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 608
Author(s):  
Huiyun Yang ◽  
Zhihao Liang ◽  
Xiao Fu ◽  
Zhuohui Xu ◽  
Honglong Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Magnesium Oxide ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Relative Dielectric Constant ◽  
Oxide Thin Film ◽  
Yttrium Aluminum

Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT. There is a conflict between a high relative dielectric constant and a wide band gap, so we solved this problem by using multiple metals to increase the entropy of the system. In this paper, we prepared zirconium-yttrium-aluminum-magnesium-oxide (ZYAMO) dielectric layers with a high relative dielectric constant using the solution method. The basic properties of ZYAMO films were measured by an atomic force microscope (AFM), an ultraviolet-visible spectrophotometer (UV-VIS), etc. It was observed that ZYAMO thin films had a larger optical band when the annealing temperature increased. Then, metal-insulator-metal (MIM) devices were fabricated to measure the electrical properties. We found that the leakage current density of the device is relatively lower and the ZYAMO thin film had a higher relative dielectric constant as the concentration went up. Finally, it reached a high relative dielectric constant of 56.09, while the leakage current density was no higher than 1.63 × 10−6 A/cm2@ 0.5 MV/cm at 1.0 M and 400 °C. Therefore, the amorphous ZYAMO thin films has a great application in the field of high permittivity request devices in the future.

Electrical and Physical Properties of Al and Nb Doped PbTiO3 Ceramic Thin Films

2005 ◽  
Vol 475-479 ◽  
pp. 1587-1590
Author(s):  
Bo Ping Zhang ◽  
Jing Feng Li ◽  
Yan Dong ◽  
Takashi Iijima
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Ferroelectric Properties ◽  
Deposition Process ◽  
Solution Deposition ◽  
Co Doping ◽  
Ceramic Thin Films ◽  
Maximum Dielectric Constant ◽  
The Individual

A series of Pb(Ti1-xAlx)O3, Pb(Ti1-xNbx)O3 and Pb(Ti1-xAlx/2Nbx/2)O3 thin films were fabricated onto Pt/Ti/SiO2/Si(100) substrates using a chemical solution deposition process. The dielectric constant of the Pb(Ti1-xAlx)O3 thin films increased with increase of aluminum content, while a maximum dielectric constant value was observed for the Pb(Ti1-xNbx)O3 and Pb(Ti1 xAlx/2Nbx/2)O3 thin films when the doping contents were 10 and 20 mol%, respectively. The dielectric constant of the Pb(Ti0.8Al0.1Nb0.1)O3 thin film is about 600, being two times higher than those of Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The Pb(Ti0.8Al0.1Nb0.1)O3 thin film showed less than 10-7 A/cm2 current density at ±150 kV/cm, being superior to the leakage property of the PbTiO3, Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The co-doping of aluminum and niobium is more effective to increase the dielectric and ferroelectric properties as compared with the individual aluminum or niobium doping.

scholarly journals Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3043
Author(s):  
Chao Feng ◽  
Tong Liu ◽  
Xinyu Bu ◽  
Shifeng Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Doping Concentration ◽  
Ferroelectric Properties ◽  
Columnar Structure ◽  
Preferred Orientation ◽  
Chemical Solution Deposition Method ◽  
Dielectric Performance ◽  
High Dielectric

Fe-doped 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) thin films were grown in Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of thin film were investigated. High (111) preferred orientation and density columnar structure were achieved in the 2% Fe-doped PMN-PT thin film annealed at 650 °C. The preferred orientation was transferred to a random orientation as the doping concentration increased. A 2% Fe-doped PMN-PT thin film showed the effectively reduced leakage current density, which was due to the fact that the oxygen vacancies were effectively restricted and a transition of Ti4+ to Ti3+ was prevented. The optimal ferroelectric properties of 2% Fe-doped PMN-PT thin film annealed at 650 °C were identified with slim polarization-applied field loops, high saturation polarization (Ps = 78.8 µC/cm2), remanent polarization (Pr = 23.1 µC/cm2) and low coercive voltage (Ec = 100 kV/cm). Moreover, the 2% Fe-doped PMN-PT thin film annealed at 650 °C showed an excellent dielectric performance with a high dielectric constant (εr ~1300 at 1 kHz).

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