Growth and Characterization of Self-Assembled Boron Carbon Nitride Needle-Like Nanostructures

2011 ◽  
Vol 216 ◽  
pp. 723-727 ◽  
Author(s):  
You Ming Chen ◽  
Guang Ye Zhang ◽  
Sheng Rong Yang ◽  
Jun Yan Zhang

Large-scale highly aligned boron carbon nitride (BCN) needle-like nanostructures were synthesized directly on Si (100) substrates by the novel technique of magnetron sputtering of the boron and graphite targets in a N2+Ar gas mixture at the substrate temperature of 800 °C. XRD reveals that the nanostructures contain an inhomogeneous crystalline structure. The hybridized BCN phases with needle-like nanostructures should now be regarded as semiconductors may be used as electron emitters for field electron emission applications.

2013 ◽  
Vol 49 (4) ◽  
pp. 352-354 ◽  
Author(s):  
Weiwei Lei ◽  
Si Qin ◽  
Dan Liu ◽  
David Portehault ◽  
Zongwen Liu ◽  
...  

2007 ◽  
Vol 16 (4-7) ◽  
pp. 1300-1303 ◽  
Author(s):  
Hidemitsu Aoki ◽  
Hidekazu Shima ◽  
Chiharu Kimura ◽  
Takashi Sugino

2004 ◽  
Vol 447-448 ◽  
pp. 192-196 ◽  
Author(s):  
Dong Ho Kim ◽  
Eungsun Byon ◽  
Sunghun Lee ◽  
Jong-Kuk Kim ◽  
Hyun Ruh

2007 ◽  
Vol 254 (2) ◽  
pp. 596-599 ◽  
Author(s):  
Hidemitsu Aoki ◽  
Kazutoshi Ohyama ◽  
Hiroshi Sota ◽  
Toshiaki Seino ◽  
Chiharu Kimura ◽  
...  

2008 ◽  
Vol 1108 ◽  
Author(s):  
Qingguo Wu ◽  
Mandyam Sriram ◽  
Jim Sims ◽  
Haiying Fu ◽  
Sesha Varadarajan ◽  
...  

AbstractThin films of boron carbon nitride (BCN) and boron carbide (BC) were synthesized by plasma enhanced chemical vapor deposition (PECVD) using two different reactant chemistries: (i) N,N’,N” – trimethylborazine (TMB); (ii) dilute diborane (5% in Ar) and hydrocarbon as precursor materials. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Nano-Indentor, Flexus stress instrument and x-ray photoelectron spectroscopy were used to study the deposited films. The BC films are much more stable than BCN films under high humidity (100%) environment. Both BCN and BC films are very stable under atmospheric conditions. A high compressive stress of -4.2 GPA was achieved by conventional PECVD, which show promising applications in high performance ultra large-scale integrated circuit (ULSI) devices.


2021 ◽  
Vol MA2021-02 (12) ◽  
pp. 618-618
Author(s):  
Shraddha Dhanraj Nehate ◽  
Sreeram Sundaresh ◽  
Kalpathy B. Sundaram

2002 ◽  
Vol 11 (3-6) ◽  
pp. 985-988 ◽  
Author(s):  
Yoshihiro Etou ◽  
Tomoyoshi Tai ◽  
Tomohiko Sugiyama ◽  
Takashi Sugino

AIChE Journal ◽  
2021 ◽  
Author(s):  
Jing Luo ◽  
Chao Wang ◽  
Jixing Liu ◽  
Yanchen Wei ◽  
Yanhong Chao ◽  
...  

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