Characterizations of Boron Carbon Nitride and Boron Carbide Films Synthesized by PECVD

2008 ◽  
Vol 1108 ◽  
Author(s):  
Qingguo Wu ◽  
Mandyam Sriram ◽  
Jim Sims ◽  
Haiying Fu ◽  
Sesha Varadarajan ◽  
...  
Keyword(s):  
Boron Carbide ◽  
Integrated Circuit ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Large Scale ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Atmospheric Conditions ◽  
Boron Carbon Nitride ◽  
Boron Carbon

AbstractThin films of boron carbon nitride (BCN) and boron carbide (BC) were synthesized by plasma enhanced chemical vapor deposition (PECVD) using two different reactant chemistries: (i) N,N’,N” – trimethylborazine (TMB); (ii) dilute diborane (5% in Ar) and hydrocarbon as precursor materials. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Nano-Indentor, Flexus stress instrument and x-ray photoelectron spectroscopy were used to study the deposited films. The BC films are much more stable than BCN films under high humidity (100%) environment. Both BCN and BC films are very stable under atmospheric conditions. A high compressive stress of -4.2 GPA was achieved by conventional PECVD, which show promising applications in high performance ultra large-scale integrated circuit (ULSI) devices.

High‐performance adsorptive desulfurization by ternary hybrid boron carbon nitride aerogel

AIChE Journal ◽  
2021 ◽  
Author(s):  
Jing Luo ◽  
Chao Wang ◽  
Jixing Liu ◽  
Yanchen Wei ◽  
Yanhong Chao ◽  
...  
Keyword(s):  
High Performance ◽  
Carbon Nitride ◽  
Adsorptive Desulfurization ◽  
Boron Carbon Nitride ◽  
Boron Carbon

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

2002 ◽  
Vol 92 (9) ◽  
pp. 5177-5182 ◽  
Author(s):  
R. Gago ◽  
I. Jiménez ◽  
F. Agulló-Rueda ◽  
J. M Albella ◽  
Zs. Czigány ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Carbide ◽  
Carbon Nitride ◽  
Amorphous Boron ◽  
Nitrogen Ion ◽  
Boron Carbon Nitride ◽  
Ion Assistance ◽  
Boron Carbon

Large scale boron carbon nitride nanosheets with enhanced lithium storage capabilities

2013 ◽  
Vol 49 (4) ◽  
pp. 352-354 ◽  
Author(s):  
Weiwei Lei ◽  
Si Qin ◽  
Dan Liu ◽  
David Portehault ◽  
Zongwen Liu ◽  
...  
Keyword(s):  
Large Scale ◽  
Carbon Nitride ◽  
Lithium Storage ◽  
Carbon Nitride Nanosheets ◽  
Boron Carbon Nitride ◽  
Boron Carbon

Transitions of Boron Carbide to B-C-N Thin Film

2009 ◽  
Vol 1204 ◽  
Author(s):  
Ruqiang Bao ◽  
Zijie Yan ◽  
Douglas B. Chrisey
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Boron Carbide ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Core Level ◽  
Hard Coatings ◽  
Boron Carbon Nitride ◽  
Better Than ◽  
Boron Carbon

AbstractBoron carbon nitride (B-C-N) thin films are attractive due to their potential as hard coatings and as semiconductors with varying band gap. Both B-C-N (BC0.24N0.24) thin films and boron carbide (B4C) thin films were deposited by radio-frequency magnetron sputtering at room temperature. Also, the transition of boron carbide to B-C-N was studied by bombarding the boron carbide thin film by ∼1 uA/cm2 4 keV N+ ions. The results show that the UV-Vis transmittance of B-C-N thin films is better than that of amorphous boron carbide and both B-C and B-N bonds exist in our B-C-N thin films. The nitrogen in our B-C-N thin films bonded with boron causes the XPS B 1s core level to shift 2 eV from that in the B4C boron carbide thin film. Ion bombardment shows that the N+ ion primarily reacts with boron to form B-N and this reaction causes the environmental change of carbon in the thin film and then the XPS C 1s core level to shift to 283.5 eV from 282.8 eV.

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