SNOM Probe Based on Nano-Antenna with Large Aperture and High Resolution

2011 ◽  
Vol 239-242 ◽  
pp. 2863-2866
Author(s):  
Jian Ping Shi ◽  
Ke Xiu Dong ◽  
Song Lin Wen ◽  
Ling Li Zhan ◽  
Hong Jian Liu
Keyword(s):  
High Resolution ◽  
Near Field ◽  
Optical Microscope ◽  
The Novel ◽  
Incident Wavelength ◽  
Large Aperture

We present a probe of scanning near-field optical microscope (SNOM) with large aperture and high resolution, which is added a metallic dipole nano-antenna onto the tip of the ordinary probe. Based on the FDTD algorithm we investigate numerically the measure results by different aperture probes for the same sample with the incident wavelength of 830nm and the scan height of 10nm. The results show that the resolution of the new probe is 100nm, 75nm, 50 nm, 45 nm, 50 nm, 70nm when the probe aperture is 50nm, 100nm, 130nm, 150nm, 170nm, 200nm respectively, and for the ordinary probe the resolution is 50nm，120 nm,140 nm,180 nm, 200nm, 220nm correspondingly. That is to say the resolution of the ordinary probe decrease rapidly with the increasing of the aperture, however the novel probe can maintain the high resolution.

High-Resolution Examination of Recording Marks in Phase-Change Media Using a Scanning Near-Field Optical Microscope

2000 ◽  
Vol 39 (Part 1, No. 6A) ◽  
pp. 3599-3602 ◽  
Author(s):  
Toshiyasu Tadokoro ◽  
Toshiharu Saiki ◽  
Keiichiro Yusu ◽  
Katsutaro Ichihara
Keyword(s):  
High Resolution ◽  
Phase Change ◽  
Near Field ◽  
Optical Microscope

The Synthetic Aperture Microscope

1996 ◽  
Vol 54 ◽  
pp. 600-601
Author(s):  
William R. Franklin ◽  
Terry M. Turpin ◽  
Jeffrey R. Lapides ◽  
Craig Price ◽  
Paul Woodford ◽  
...  
Keyword(s):  
High Resolution ◽  
Synthetic Aperture Radar ◽  
Optical Microscope ◽  
Synthetic Aperture ◽  
Objective Lens ◽  
Large Aperture ◽  
Working Distance ◽  
Aperture Radar

It is well known that the resolution of a microscope depends critically on the aperture of its objective lens. Achieving wide apertures requires the lens to be extremely close to the sample being imaged, which is often inconvenient. We describe an optical microscope, currently in breadboard form, that achieves a large aperture, and thus high resolution, with a large (theoretically unlimited) working distance, based on the principles of synthetic aperture radar (SAR).

High resolution and high sensitivity near-field optical microscope

2000 ◽  
Vol 53 (1-4) ◽  
pp. 653-656 ◽  
Author(s):  
J.M. Freyland ◽  
R. Eckert ◽  
H. Heinzelmann
Keyword(s):  
High Resolution ◽  
Near Field ◽  
High Sensitivity ◽  
Optical Microscope

Method to produce high-resolution scanning near-field optical microscope probes by beveling optical fibers

2000 ◽  
Vol 71 (8) ◽  
pp. 3118-3122 ◽  
Author(s):  
T. Held ◽  
S. Emonin ◽  
O. Marti ◽  
O. Hollricher
Keyword(s):  
High Resolution ◽  
Optical Fibers ◽  
Near Field ◽  
Optical Microscope

Near-field scanning optical microscopy

1986 ◽  
Vol 44 ◽  
pp. 642-643
Author(s):  
E. Betzig ◽  
A. Harootunian ◽  
M. Isaacson ◽  
A. Lewis
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Visible Radiation ◽  
Field Methods ◽  
Optical Elements ◽  
Optical Region ◽  
Order Of Magnitude ◽  
Nondestructive Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

Cosmetology treatments on human hair: An SEM study

1996 ◽  
Vol 54 ◽  
pp. 940-941
Author(s):  
D.F. Bowling
Keyword(s):  
High School ◽  
High Resolution ◽  
Human Hair ◽  
Optical Microscope ◽  
Convincing Evidence ◽  
Brightness Contrast ◽  
Sem Study

High school cosmetology students study the methods and effects of various human hair treatments, including permanents, straightening, conditioning, coloring and cutting. Although they are provided with textbook examples of overtreatment and numerous hair disorders and diseases, a view of an individual hair at the high resolution offered by an SEM provides convincing evidence of the hair‘s altered structure. Magnifications up to 2000X provide dramatic differences in perspective. A good quality classroom optical microscope can be very informative at lower resolutions.Students in a cosmetology class are initially split into two groups. One group is taught basic controls on the SEM (focus, magnification, brightness, contrast, specimen X, Y, and Z axis movements). A healthy, untreated piece of hair is initially examined on the SEM The second group cements a piece of their own hair on a stub. The samples are dryed quickly using heat or vacuum while the groups trade places and activities.

New form of Transmission Cross Coefficient for High-Resolution Imaging

1990 ◽  
Vol 48 (1) ◽  
pp. 60-61
Author(s):  
Kazuo Ishizuka
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Function ◽  
Incident Beam ◽  
Optical Microscope ◽  
Strong Interactions ◽  
Small Range ◽  
Specimen Thickness ◽  
Beam Direction ◽  
Diffracted Waves

It is well known that taking into account spacial and temporal coherency of illumination as well as the wave aberration is important to interpret an image of a high-resolution electron microscope (HREM). This occues, because coherency of incident electrons restricts transmission of image information. Due to its large spherical and chromatic aberrations, the electron microscope requires higher coherency than the optical microscope. On an application of HREM for a strong scattering object, we have to estimate the contribution of the interference between the diffracted waves on an image formation. The contribution of each pair of diffracted waves may be properly represented by the transmission cross coefficients (TCC) between these waves. In this report, we will show an improved form of the TCC including second order derivatives, and compare it with the first order TCC.In the electron microscope the specimen is illuminated by quasi monochromatic electrons having a small range of illumination directions. Thus, the image intensity for each energy and each incident direction should be summed to give an intensity to be observed. However, this is a time consuming process, if the ranges of incident energy and/or illumination direction are large. To avoid this difficulty, we can use the TCC by assuming that a transmission function of the specimen does not depend on the incident beam direction. This is not always true, because dynamical scattering is important owing to strong interactions of electrons with the specimen. However, in the case of HREM, both the specimen thickness and the illumination angle should be small. Therefore we may neglect the dependency of the transmission function on the incident beam direction.

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

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