Fabrication and Characterization of High Quality Micro Diamonds by Hot Filament CVD

2011 ◽  
Vol 325 ◽  
pp. 582-587
Author(s):  
T. Zhang ◽  
Fang Hong Sun ◽  
Bin Shen ◽  
Z.M. Zhang
Keyword(s):  
Silicon Wafer ◽  
Chemical Vapor ◽  
High Quality ◽  
Acetone Concentration ◽  
Vapor Deposition Technique ◽  
Hot Filament Cvd ◽  
Average Size ◽  
Hot Filament

The high quality micro diamonds with the euhedral diamond faces are fabricated by hot filament chemical vapor deposition technique (HFCVD). The high pressure and high temperature (HPHT) single crystal diamonds in size of 1 μm are used as seeds. In order to disperse the diamond seeds uniformly on a silicon wafer, the photoresist solution with diamond seeds are performed on the silicon wafer by a spin coater machine. The high substrate temperature and low acetone concentration are employed for decreasing the nucleation rate and accelerating the growth rate. The morphology and quality of the micro diamonds are observed and analyzed by SEM and Raman spectroscopy. After 4 hours of the deposition, the surface imperfections of the diamond seeds have disappeared completely, and the euhedral diamond faces with (111) and (100) begin to emerge. Subsequently, 8 hours of deposition leads to a final average size of approximately 4 μm. The micro diamonds have very high quality, and the surfaces appear flat and smooth in this stage. The results indicate that it is an effective way to eliminate the defects of the HPHT micro diamonds and develop high quality diamonds with well-defined morphology by HFCVD technique.

Characterization of High Quality, Large-Scale Growth of Monolayer WS2 Domains via Chemical Vapor Deposition Technique

2021 ◽  
Author(s):  
Somayeh Asgary ◽  
Amir Hoshang Ramezani ◽  
Zhaleh Ebrahimi Nejad
Keyword(s):  
Large Scale ◽  
Average Length ◽  
Chemical Vapor ◽  
Growth Time ◽  
High Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Regular Triangle ◽  
Vapor Deposition Technique

Abstract WS2 flakes have been grown successfully on SiO2 substrate via chemical vapor (CVD) deposition method by reduction and sulfurization of WO3 using Ar/ H2 gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy (OM), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). Large domain WS2 monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS2 flakes with an average length of more than 35 µm were achieved. The sharp PL peak (∼1.98 eV) and two distinct Raman peaks (E2g and A1g) with a ∼ 71.5 cm-1 peak split indicating that relatively high quality WS2 crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS2.

Porous 3-D Titanium Substrates Obtained by Powder Metallurgy for Nanodiamond Film Growth

2010 ◽  
Vol 660-661 ◽  
pp. 391-396
Author(s):  
N.A. Braga ◽  
Carlos Alberto Alves Cairo ◽  
N.G. Ferreira ◽  
M.R. Baldan ◽  
Vladimir J. Trava-Airoldi
Keyword(s):  
Film Growth ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Sem Images ◽  
Vapor Deposition Technique ◽  
Titanium Powders ◽  
Hot Filament ◽  
Titanium Substrates ◽  
Sintering Method

Power metallurgy has been used to produce compacts by two different routes. In this work, porous three-dimensional (3-D) substrates were prepared by the conventional pre-forms sintering method. Titanium powders were uniaxial pressed at 110 Mpa and vacuum (1 x 10-5 Pa) sintered at 1500 K. Another group of substrates were obtained by the space holder technique. Irregular shaped carbamide particles (210 – 250 m diameters) were mixed to Ti powders, pressed and sintered. Before the sintering the compacts were heated at 470 K for 3 h to eliminate the spacing holder agent. Nanodiamond films were grown by hot-filament chemical vapor deposition technique on such substrates at 870 K from a mixture of Ar/H2 (80%-18,5%) respectively and a solid carbon source. SEM images show the substrates totally covered by a nanodiamond film including deeper planes. Raman Spectra confirm the good quality of the nanodiamond film.

Raman scattering characterization of (100) and (111) oriented diamond films grown in the same run by hot filament chemical vapor deposition

1994 ◽  
Vol 9 (11) ◽  
pp. 2839-2844 ◽  
Author(s):  
G. Popovici ◽  
S. Khasawinah ◽  
T. Sung ◽  
M.A. Prelas ◽  
B.V. Spitsyn ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Deposition ◽  
Chemical Vapor ◽  
Infrared Excitation ◽  
Hot Filament

The crystalline quality of a diamond film with two different preferential orientations (100) and (111), obtained in the same run by hot filament chemical deposition, has been studied. The quality of the film determined by Raman spectroscopy measurements was found to be nearly the same for both orientations. The second order Raman spectrum for diamond film was observed by using an infrared excitation.

Rapid Synthesis of Dielectric Films by Microwave Assisted CVD

2006 ◽  
Vol 929 ◽  
Author(s):  
Nicholas Ndiege ◽  
Vaidyanathan Subramanian ◽  
Mark Shannon ◽  
Rich Masel
Keyword(s):  
Chemical Vapor ◽  
Film Deposition ◽  
Dielectric Films ◽  
High Quality ◽  
Microwave Assisted ◽  
High K ◽  
High K Dielectric ◽  
Deposition Techniques

ABSTRACTFilm deposition methods have been the focus of renewed interest in the past decade due to calls for cheaper and more environment friendly deposition techniques as well as better quality of films. This paper describes a novel deposition technique: Microwave assisted chemical vapor deposition (MACVD). This technique utilizes inexpensive equipment and works at temperatures close to room temperature and ambient pressures. Deposition rates are very high (>1 micron a minute) and the resulting films are of high quality i.e. high density, stability. Conventional deposition techniques such as epitaxy, e-beam evaporation and LPCVD can achieve high quality films but the financial and environmental costs are high. This study considers the MACVD of a high k dielectric film (Ta2O5) on silicon for dielectric and insulation applications. Films generated are dense and stable with thicknesses varying from 60 nm to 62 microns. Depth profile studies of 575nm thick MACVD derived films show results similar to that of high quality films generated via MOCVD. Characterization of the resulting films was done using XRD, SEM, XPS, AES and profilometry techniques.

Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

2016 ◽  
Vol 869 ◽  
pp. 721-726 ◽  
Author(s):  
Divani C. Barbosa ◽  
Ursula Andréia Mengui ◽  
Mauricio R. Baldan ◽  
Vladimir J. Trava-Airoldi ◽  
Evaldo José Corat
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

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