Study on Photoelectric Performance of Organic Light Emitting Device

2012 ◽  
Vol 580 ◽  
pp. 449-452
Author(s):  
Li Lin Zhan ◽  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Relative Humidity ◽  
Marked Improvement ◽  
Thermal Evaporation ◽  
Luminous Efficiency ◽  
Thermal Evaporation Method ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Vacuum Thermal Evaporation ◽  
Organic Light ◽  
Photoelectric Performance

Organic light emitting devices (OLED) with the structure of ITO/TPD(30nm) /Alq3 (40nm)/LiF/Al were prepared by vacuum thermal evaporation method. The influence of relative humidity and LiF buffer layer to the photoelectric performance of OLED was observed as well. It showed that the device had good photoelectric performance under relative humidity 40%, also had very good rectifier characteristics, the starting voltage was 12V, maximum luminous efficiency was 1.74cd/A. With the injection of LiF layer, the device electro-optical properties had marked improvement, the starting voltage dropped to 10V, brightness increased to 2450 cd/m2, maximum luminous efficiency was 2.34 cd/A.

High efficiency fluorescent white OLEDs based on DOPPP

2017 ◽  
Vol 31 (23) ◽  
pp. 1750220 ◽  
Author(s):  
Gang Zhang ◽  
Chen Chen ◽  
Jihui Lang ◽  
Lina Zhao ◽  
Wenlong Jiang
Keyword(s):  
High Efficiency ◽  
Thermal Evaporation ◽  
Maximum Luminance ◽  
Thermal Evaporation Method ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Maximum Current ◽  
20 Nm ◽  
Better Than

The white organic light-emitting devices (WOLED) with the structures of ITO/m-MTDATA (10 nm)/NPB (30 nm)/Rubrene (0.2 nm)/DOPPP (x nm)/TAz (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al and ITO/NPB (30 nm)/DPAVBi:Rubrene (2 wt.%, 20 nm)/ DOPPP (x nm)/TAZ (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al (100 nm) have been fabricated by the vacuum thermal evaporation method. The results show that the chroma of the non-doped device is the best and the color coordinates are in the range of white light. The maximum luminance is 12,750 cd/m2 and the maximum current efficiency is 8.55 cd/A. The doped device A has the maximum luminance (16,570 cd/m2), when the thickness of blue layer DOPPP is 25 nm, and the doped device B achieves the highest efficiency (10.47 cd/A), when the thickness of DOPPP is 15 nm. All the performances of the doped devices are better than the non-doped one. The results demonstrate that the doped structures can realize the energy transfer and then improve the performance of the device effectively.

Properties of Organic Light Emitting Device with ZnO Anode Buffer Layer

2013 ◽  
Vol 830 ◽  
pp. 215-218
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Potential Barrier ◽  
Layer Structure ◽  
Luminous Efficiency ◽  
Buffer Layers ◽  
Thermal Evaporation Method ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Photoelectric Properties ◽  
Organic Light ◽  
Relationship Of

Organic light emitting devices with the structure of ITO/ZnO/TPD/Alq3/Al were prepared by vacuum thermal evaporation method. By establishing multi-layer structure model, the photoelectric properties of the devices with different thickness ZnO anode buffer layers were discussed, the relationship of current density and luminous efficiency with work voltage was found and the comparison analysis with CuPc devices were carried out as well. The results showed that ZnO as the stable dipole layer between ITO and TPD can reduce the potential barrier for holes injection, promote the compound of electrons and holes, when ZnO thickness was 3 nm, the devices had minimum potential barrier and best luminous efficiency, the brightness increased nearly three times than traditional CuPc devices.

A Novel Efficient Blue Organic Light Emitting Structure

2005 ◽  
Vol 475-479 ◽  
pp. 3677-3680 ◽  
Author(s):  
Wen Long Jiang ◽  
Yu Duan ◽  
Yi Zhao ◽  
Jingying Hou ◽  
Shi Yong Liu
Keyword(s):  
Light Emission ◽  
Copper Phthalocyanine ◽  
Luminous Efficiency ◽  
Blocking Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Carrier Recombination ◽  
Organic Light ◽  
Hole Blocking Layer ◽  
Organic Light Emitting Devices

In this paper, we describe the performance of an organic light emitting devices〔OLEDs〕 with ITO /4,4’,4“-tris{N,- （ 3-methylphenyl ） -N-phenylamino}triphenylamine (m-MTDATA) /N,N-diphenyl-N,N-bis1-naphthyl-1,1-biphenyl-4,4-diamine (NPB) /copper phthalocyanine (CuPc) / NPB / Bathocuproine(BCP) / tris-8-hydroxyquinoline Aluminum (Alq3) / LiF/ AL structure, the CuPc inserted between the two layers of NPB as a hole-consuming layer (HCL), and the BCP as a hole-blocking layer (HBL) . The EL spectrum peak is at 430 nm, indicating that the carrier recombination is confined in the NPB layer, in additional light emission originates from NPB. Compared with the luminous efficiency of the conventional diode without CuPc layer, that of the diode with HCL has been sharply increased up to 2.62 cd /A. It suggested that the CuPc and BCP exactly function as hole-consuming and hole-blocking layers, respectively, which enhance the efficiency of carrier，s recombination and confine the excitation in the EL layer.

Characteristics of Self-Nanostructured Growth of 4,6-Bis(3,5-di(pyridin-3-yl)phenyl)-2-Methylpyrimidine (B3PyMPM)

2021 ◽  
Vol 21 (8) ◽  
pp. 4212-4215
Author(s):  
Eun Jeong Bae ◽  
Dong-Hyun Baek ◽  
Young Wook Park
Keyword(s):  
Thermal Evaporation ◽  
Rotation Speed ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Efficiency Improvement ◽  
Light Emitting ◽  
Substrate Rotation ◽  
Vacuum Thermal Evaporation ◽  
Organic Light

In this study, we report the self-nanostructured growth of 4,6-bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine (B3PyMPM), which is widely used as an electron transport layer for organic light-emitting diodes (OLEDs). B3PyMPM nanostructures were formed on the surface of a substrate using vacuum thermal evaporation, and parameters such as substrate rotation speed and evaporation angle were altered to study their effect on the growth of nanostructures. Moreover, it was proven that the growth of nanostructures was dependent on the underneath materials. This self-nanostructured growth of B3PyMPM would affect the outcoupling and the efficiency improvement of OLEDs.

Preparation and Characterization of Organic Light Emitting Devices Using QD Dopant

2004 ◽  
Vol 449-452 ◽  
pp. 1021-1024 ◽  
Author(s):  
Jung Yohn Cho ◽  
Ho Jung Chang
Keyword(s):  
Luminous Efficiency ◽  
Host Material ◽  
Oled Device ◽  
Emission Layer ◽  
Maximum Brightness ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices

Two types of the organic light-emitting devices (OLEDs) with different emission structures were prepared using Alq3 (aluminum tris 8-hydroxyquinoline) host material and quinacridone (QD) dopant at the emission layer. One is the OLED device with emission layer consisting of Alq3 host material doped with QD dopant ("codoped OLED"). The another one has a seperated QD dopant film in the Alq3 emission layer ("undoped OLED"). The maximum brightness of the codoped and undoped OLEDs were 3207 cd/m2 and 1570 cd/m2, respectively. The wavelength of the maximum emission peak in the undoped sample was 527 nm and shifted slightly toward longer wavelength with the value of 540 nm for the codoped OLED sample. The maximum luminous efficiency of the undoped OLED was about 1.4 lm/W and increased to 7.0 lm/W for the codoped sample.

High Efficiency Blue Organic Light Emitting Devices doped by BCzVBi in Hole and Electron Transport Layer

2013 ◽  
Vol 1567 ◽  
Author(s):  
Nam Ho Kim ◽  
You-Hyun Kim ◽  
Ju-An Yoon ◽  
Sang Youn Lee ◽  
Hyeong Hwa Yu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Carrier Transport ◽  
High Efficiency ◽  
Luminous Efficiency ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light

ABSTRACTThe electroluminescent characteristics of blue organic light-emitting diodes(BOLEDs) were fabricated with single emitting layer using host-dopant system and doped charge carrier transport layers. The structure of the high efficiency BOLED device was; NPB(600Å)/NPB:BCzVBi-7%(100Å)/ADN:BCzVBi-7%(300Å)/BAlq:BCzVBi-7%(100Å)/BAlq(200Å)/Liq(20Å)/Al(1200Å) to optimize probability of exciton generation by doping BCzVBi in emitting layer and hole/electron transport layers(HTL/ETL) as well. Luminance and luminous efficiency of BOLED doped BCzVBi in EML and HTL/ETL improved from 10090 cd/m2 at 9.5V and 6.44 cd/A at 4.0V to 13190 cd/m2 at 9.5V and 7.64 cd/A at 4.0V about 30% and 18%, respectively, with CIE coordinates of (0.14, 0.17) comparing to BOLED doped BCzVBi in EML only

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