The Structure and Light Emitting of Silicon-Doped Boron Nitride Nanotubes

In this paper, we report the structural and optical properties of bamboo-like silicon-doped boron nitride nanotubes. The morphologies and structures of the nanotubes were characterized using electron microscopy and FTIR spectroscopy. Three strong broad peaks centered at 1.76ev, 2.20ev, 2.40ev were observed from the room-temperature PL spectrum of the nanotubes. The spectrum suggested the existence of multifold energy levels within the band gap.

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Structural and optical properties of SnO2–Al2O3 nanocomposite synthesized via sol-gel route

Materials Science-Poland ◽

10.1515/msp-2015-0101 ◽

2015 ◽

Vol 33 (4) ◽

pp. 714-718 ◽

Cited By ~ 4

Author(s):

Neeraj K. Mishra ◽

Chaitnaya Kumar ◽

Amit Kumar ◽

Manish Kumar ◽

Pratibha Chaudhary ◽

...

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Optical Properties ◽

Sol Gel ◽

Physical Interaction ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

X Ray ◽

Sensing Applications ◽

Scanning Electron

AbstractA nanocomposite of 0.5SnO2–0.5Al2O3 has been synthesized using a sol-gel route. Structural and optical properties of the nanocomposite have been discussed in detail. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive X-ray diffraction spectroscopy confirm the phase purity and the particle size of the 0.5SnO2–0.5Al2O3 nanocomposite (13 to 15 nm). The scanning electron microscopy also confirms the porosity in the sample, useful in sensing applications. The FT-IR analysis confirms the presence of physical interaction between SnO2 and Al2O3 due to the slight shifting and broadening of characteristic bands. The UV-Vis analysis confirms the semiconducting nature because of direct transition of electrons into the 0.5SnO2–0.5Al2O3 nanocomposites.

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Optical properties of boron nitride nanotubes: potential exploitation in nanomedicine

Boron Nitride Nanotubes in Nanomedicine ◽

10.1016/b978-0-323-38945-7.00009-2 ◽

2016 ◽

pp. 139-147

Author(s):

Vincenzo Piazza ◽

Mauro Gemmi

Keyword(s):

Optical Properties ◽

Boron Nitride ◽

Boron Nitride Nanotubes ◽

Potential Exploitation

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Doping of GaN by ion implantation

MRS Proceedings ◽

10.1557/proc-650-r8.4/o13.4 ◽

2000 ◽

Vol 650 ◽

Author(s):

Eduardo J. Alves ◽

C. Liu ◽

Maria F. da Silva ◽

José C. Soares ◽

Rosário Correia ◽

...

Keyword(s):

Optical Properties ◽

Ion Implantation ◽

Room Temperature ◽

Lattice Site ◽

Helium Temperature ◽

Site Location ◽

Structural And Optical Properties ◽

X Ray ◽

Er Doped ◽

Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

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Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

Journal of Nanophotonics ◽

10.1117/1.jnp.10.016002 ◽

2016 ◽

Vol 10 (1) ◽

pp. 016002 ◽

Cited By ~ 9

Author(s):

Kaikai Xu ◽

Zhengyuan Zhang ◽

Zhengping Zhang

Keyword(s):

Optical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Optical Properties ◽

Light Emitting ◽

Light Emitting Devices

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Boron Nitride Nanotubes: Nanoparticles Functionalization and Junction Fabrication

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.120 ◽

2007 ◽

Vol 7 (2) ◽

pp. 530-534 ◽

Cited By ~ 16

Author(s):

Chunyi Zhi ◽

Yoshio Bando ◽

Guozhen Shen ◽

Chengchun Tang ◽

Dmitri Golberg

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Boron Nitride ◽

Boron Nitride Nanotubes ◽

X Ray Diffraction ◽

Carbon Nanostructure ◽

Wet Chemistry ◽

X Ray ◽

Transmission Electron ◽

First Time

Adopting a wet chemistry method, Au and Fe3O4 nanoparticles were functionalized on boron nitride nanotubes (BNNTs) successfully for the first time. X-ray diffraction pattern and transmission electron microscopy were used to characterize the resultant products. Subsequently, a method was proposed to fabricate heterojunction structures based on the particle-functionalized BNNTs. As a demonstration, BNNT-carbon nanostructure, BNNT-ZnO and BNNT-Ga2O3 junctions were successfully fabricated using the functionalized particles as catalysts.

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Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

MRS Proceedings ◽

10.1557/proc-0892-ff23-15 ◽

2005 ◽

Vol 892 ◽

Cited By ~ 2

Author(s):

Katharina Lorenz ◽

E. Nogales ◽

R. Nédélec ◽

J. Penner ◽

R. Vianden ◽

...

Keyword(s):

Optical Properties ◽

Rare Earth ◽

Room Temperature ◽

Rutherford Backscattering Spectrometry ◽

Strong Increase ◽

Structural And Optical Properties ◽

Nitrogen Gas ◽

Higher Temperature ◽

The Eu ◽

The Rare Earth

AbstractGaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 °C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000 °C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3 + N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 °C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

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