Recent Development of Focused Ion Beam System and Application

2013 ◽  
Vol 753-755 ◽  
pp. 2578-2581
Author(s):  
Yan Chen ◽  
Li Bao An ◽  
Xiao Xia Yang
Keyword(s):  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Ion Source ◽  
Device Fabrication ◽  
Precision Machining ◽  
Micro Machining ◽  
Precise Positioning ◽  
Beam System ◽  
Ultra Precision

Ultra-precision machining is used for many engineering applications where the traditional processes fail to work. Focused ion beam (FIB) technology is a very important part of the ultra-precision machining. It can realize the precise positioning, microscopic observation and micro machining. This paper introduces the FIB system and its application. FIB system contains ion source, focusing and scanning equipment and sample station. FIB technique has many unique and important functions. It is widely used in semiconductor device fabrication and circuit failure analysis. It can realize sample etching, imaging, thin film deposited, ion implantation and micromachining.

“On Wafer” Design Validation Through Complementary Dual-Side Circuit Editing using FIB

2004 ◽  
Author(s):  
Mark A. Thompson ◽  
Calvin Chen ◽  
Chun-Cheng Tsao ◽  
Ming Han ◽  
Hun Lian Tsai
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Emission Measurement ◽  
Front Side ◽  
Wafer Level ◽  
Minimal Sample ◽  
Beam System ◽  
Driver Circuit

Abstract We present, a novel solution to focused ion beam (FIB) circuit edit, performed through the back and front surfaces of the same semiconductor device under test (DUT). This complementary dual-side FIB modification was performed at wafer level test, on a wafer piece, utilizing a coaxial photon-ion focused ion beam system. The DUT was found to have excessive Iddq leakage current due to a fault in a tri-state driver circuit, and was determined that two FIB edits were required to validate the proposed correction. Wafer level editing provides a more flexible approach to access the edit sites. We accessed one site via the front side circuitry of the DUT and the other through the backside silicon. A wafer piece was used for this dual-side edit to demonstrate relatively uncomplicated sample preparation for FIB access, and still allow wafer level probing afterward. The silicon was locally thinned by mechanical means over the specific die for backside FIB editing. Following the backside edit, the front side edit was performed, with minimal sample preparation. The modifications were validated following these edits, where Iddq and emission measurement were nominal.

Focused ion beam-shaped microtools for ultra-precision machining of cylindrical components

2003 ◽  
Vol 27 (1) ◽  
pp. 59-69 ◽  
Author(s):  
Y.N Picard ◽  
D.P Adams ◽  
M.J Vasile ◽  
M.B Ritchey
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Precision Machining ◽  
Ultra Precision

Focused Ion Beam Nano-Precision Machining for Analyzing Photonic Structures in Butterfly

2010 ◽  
Vol 447-448 ◽  
pp. 174-177 ◽  
Author(s):  
Hou Xiao Wang ◽  
Wei Zhou ◽  
Er Ping Li
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Functional Materials ◽  
Device Fabrication ◽  
Precision Machining ◽  
Photonic Structures ◽  
Butterfly Wings ◽  
Increasing Trend ◽  
The Difference ◽  
Sub Wavelength

Nano-precision machining using focused ion beam (FIB) is widely applied in many fields. So far, FIB-based nanofabrication for specific nanoscale applications has become an interesting topic to realize more diversities for nano-construction. Through FIB machining, we can easily achieve the required nano- and micro-scale patterning, device fabrication, and preparation of experimental samples. Nowadays, there is an increasing trend to learn from nature to design novel multi-functional materials and devices. Thus, more interestingly, another advantage of FIB is that it can be conveniently used to analyze the natural photonic structures, e.g., those in the butterfly which exhibits amazing optical phenomena due to sub-wavelength structural color. Accordingly, in the present study, structural analyses for butterfly wings were carried out using FIB. It is found that the photonic structures for the backside and frontside of the butterfly wing studied differ considerably. The difference accounts for the different colors on the dorsal and ventral sides of butterfly wings.

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