Effect of Gas Flow Rate on the Properties of Amorphous Carbon Thin Films Prepared by Thermal CVD Using Camphoric Carbon Precursor

2013 ◽  
Vol 832 ◽  
pp. 423-428
Author(s):  
K. Dayana ◽  
A.N. Fadzilah ◽  
A. Ishak ◽  
Yosri M. Siran ◽  
Syahril Anuar M. Rejab ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Flow Rate ◽  
Gas Flow ◽  
Nir Spectroscopy ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Thermal Cvd ◽  
Current Voltage ◽  
Amorphous Structures

Amorphous carbon (a-C) thin films have been prepared by a simple thermal CVD using camphor oil as precursor. The effects of argon gas flow rate on electrical, optical and structural properties of a-C thin films have been investigated. The a-C thin films were characterized by using current-voltage (I-V) measurement, UV-Vis-NIR spectroscopy, Raman and FTIR spectroscopy. The I-V study reveals that the electrical conductivity was increased with increasing argon gas flow rate. It was found that the optical band gap decreased from 0.88 to 0.42 eV as gas flow rate increased which indicates a microstructural disorder at different gas flow rate. Raman and FTIR studies reveal the amorphous structures which consist of a mixture of sp2 and sp3 bonded carbon atoms.

INFLUENCE OF PROCESS PARAMETERS ON OPTICAL AND PHYSICAL PROPERTIES OF ITO THIN FILM

2019 ◽  
Vol 27 (07) ◽  
pp. 1950183
Author(s):  
AREZOO MOSHABAKI ◽  
ERFAN KADIVAR ◽  
ALIREZA FIROOZIFAR
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Gas Flux ◽  
Argon Gas ◽  
Ito Thin Films ◽  
Oxygen Gas

Indium tin oxide (ITO) thin films have been deposited on glass substrate by DC magnetron sputtering in the presence and absence of oxygen gas flux. Subsequently, some of the samples have been annealed in vacuum or air oven at [Formula: see text]C for 20[Formula: see text]min. The optical, surface morphology and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, four-point probe and Hall effect measurements as a function of argon gas flux, film thickness, deposition rate and substrate temperature. Experimental results indicate that the surface roughness increases by decreasing the argon gas flow rate and deposition rate. The result revealed that the lowest surface roughness of 1.07[Formula: see text]nm is achieved at zero oxygen gas flux, argon gas flow 20[Formula: see text]sccm and deposition rate [Formula: see text] Å/s. We have found that the maximum value of merit figure is related to the argon gas flow rate 30[Formula: see text]sccm. In order to obtain a very smooth surface, finally, the ITO thin films have been processed with alumina polishing solution by ultrasonic method. Our experimental results indicate that surface roughness decreases and merit figure increases after polishing process.

scholarly journals Argon Flow Rate Effect on Hardness of Carbon Thin Films on SKD11 Steel Using Target Material from Battery Carbon Rods with Plasma Sputtering Method

2020 ◽  
Vol 55 (3) ◽  
Author(s):  
Aladin Eko Purkuncoro ◽  
Rudy Soenoko ◽  
D.J Djoko Herry ◽  
Yudy Surya Irawan
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Gas Flow ◽  
Target Material ◽  
Rate Parameter ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Plasma Sputtering ◽  
Carbon Thin Films ◽  
Facility Construction

Processes for increasing the hardness value of steel are among the most challenging in industrial applications. SKD11 steel is one of the steels that is commonly used in industry (building, transportation facility construction, and production of various kinds of scissors such as knife-edge mold, scissors, circular saw blades, and metal stamping mold). However, SKD11 steel has a hardness value of only around 58–60 HV. Even though it is often used for building and transportation facility construction, which requires material with a high hardness performance. It will be better if the hardness performance is increased. The deposition of carbon thin films with plasma sputtering is a physical vapor deposition method that is effective for improving the hardness value of material. The purpose of this study is to obtain the maximum average hardness value of carbon thin films on SKD11 through the optimization of the argon gas flow rate parameter on plasma sputtering. The effect of the argon gas flow rate parameter on the hardness value of carbon thin films for SKD11 steel is investigated using a Vickers hardness tester. The research method involves the use of target material from battery waste (carbon rods) using argon gas low-frequency plasma sputtering with variations in the argon gas flow rate of 20, 40, 60, 80, and 100 mL/min for 2 hours at 300˚C. The method allows for the improvement of the hardness performance of carbon thin films because the argon gas flow rate affects the probability of carbon atom collision with particles in the chamber and the number of argon ions formed. This can cause different structures and hardness values of thin films. Based on the results, it can be concluded that the optimum argon gas flow rate parameter is 80 mL/min, which is associated with the highest average hardness value of 335.9 HV.

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

scholarly journals ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio

2012 ◽  
Vol 37 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Iping Suhariadi ◽  
Naho Itagaki ◽  
Kazunari Kuwahara ◽  
Koichi Oshikawa ◽  
Daisuke Yamashita ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rate Ratio ◽  
Gas Flow ◽  
Buffer Layers ◽  
Flow Rate Ratio ◽  
Gas Flow Rate ◽  
Ar Gas
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