scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

scholarly journals Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1635
Author(s):  
Md. Akhtaruzzaman ◽  
Md. Shahiduzzaman ◽  
Nowshad Amin ◽  
Ghulam Muhammad ◽  
Mohammad Aminul Islam ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Gas Flow Rate ◽  
Flow Rates ◽  
Ar Gas

Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 1014 to 26.29 × 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells.

Electronic structure modification in Fe substituted β-Ga2O3 from resonant photoemission and soft x-ray absotption spectroscopies

2021 ◽  
Author(s):  
Sahadeb Ghosh ◽  
Mangala Nand ◽  
Rajiv Kamparath ◽  
Mukul Gupta ◽  
Devdatta M Phase ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Binding Energies ◽  
Transfer System ◽  
Structure Modification ◽  
X Ray ◽  
Resonant Photoemission ◽  
A Charge ◽  
Fe Substitution

Abstract Oriented thin films of β-(Ga1-xFex)2O3 have been deposited by RF magnetron sputtering on c-Al2O3 and GaN substrates. The itinerant character of Fe 3d states forming the top of the valence band (VB) of Fe substituted of β-Ga2O3 thin films has been determined from resonant photoelectron spectroscopy (RPES). Further, admixture of itinerant and localized character of these Fe 3d sates is obtained for larger binding energies i.e deeper of VB. The bottom of the conduction band (CB) for β-(Ga1-xFex)2O3 is also found to be strongly hybridized states involving Fe 3d and O 2p states as compared to that of Ga 4s in pristine β-Ga2O3. This suggests that β-Ga2O3 transforms from band like system to a charge transfer system with Fe substitution. Furthermore, the bandgap red shits with Fe composition, which has been found to be primarily related to the shift of the CB edge.

Characterizations and Process Parameters of Titanium Dioxide Thin Film by RF Sputtering

2013 ◽  
Vol 22 ◽  
pp. 9-21 ◽  
Author(s):  
Chii Rong Yang ◽  
Tun Ping Teng ◽  
Yun Yu Yeh
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Flow Rate ◽  
Gas Flow ◽  
Deposition Time ◽  
Photocatalytic Performance ◽  
Oxidation Process ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Oxygen Ratio

In this study, we successfully combined RF magnetron sputtering of a pure Ti metal target and one-stage oxidation process with a wider oxygen ratio (10%-90%) and total sputtering flow rate (16-24 sccm) to produce TiO2thin films on a glass substrate. The crystallization, morphology, roughness, and thickness of the thin films were examined using XRD, HR-FESEM, AFM, and a profilometer. Subsequently, the photocatalytic performance was examined using a spectrometer and video tensiometer. The experimental results show that the TiO2thin films with a majority of anatase and higher roughness exhibit superior photocatalytic performance; the total sputtering gas flow rate of 18 sccm and oxygen content at 10% is the optimal option. Finally, an empirical formula to correlate the film thickness with deposition time was conducted for the sputtering flow rate of 18 sccm and the oxygen content of 10%.

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 25 (S1) ◽  
pp. S36-S39 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Microstructure ◽  
Direct Preparation ◽  
Sno2 Thin Films ◽  
P Type ◽  
Reactive Rf Magnetron Sputtering

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

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