Room-Temperature Deposition of ZnO Thin Films by Using DC Magnetron Sputtering

2014 ◽  
Vol 896 ◽  
pp. 237-240 ◽  
Author(s):  
Putut Marwoto ◽  
Sulhadi ◽  
Sugianto ◽  
Didik Aryanto ◽  
Edy Wibowo ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Film Growth ◽  
Transparent Conductive Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Plasma Power ◽  
Zno Film ◽  
Dc Magnetron Sputtering

ZnO thin films have successfully been deposited using DC magnetron sputtering at room temperature by means of plasma power variation. XRD results show that films were grown at a plasma power of 30 W and 40 W are polycrystalline, while at 20 W is considered as amorphous. The optical bandgap of films are shrinkage by increasing the plasma power. The broadest transmittance range is belongs to ZnO film growth at plasma power of 40 W. The electrical conductivity of ZnO films increase from 4.02x10-7(Ωcm)-1to 8.92x10-7(Ωcm)-1once the plasma power is increased. Based on the electrical and optical properties of the films it clearly be seen that ZnO film grown at plasma power of 40 W has highest transmittance and lower electrical resistivity therefore it appropriate for transparent conductive oxide (TCO).

scholarly journals PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Sudjatmoko Sudjatmoko ◽  
Suryadi Suryadi ◽  
Widdi Usada ◽  
Tono Wibowo ◽  
Wiryoadi Wiryoadi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Aluminium Doping ◽  
Deposited Films ◽  
Heated Glass

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING. Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering using targets composed of ZnO and Al2O3. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. The surface morphology and crystalline structure, as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis were observed that the optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when deposition temperature was raised from 200 to 400 oC. Films grown on 300 oC substrates showed a high conductivity value of 0.2 x 102 -1cm-1 and a visible transmission of about 85%. The growth temperatures of 300 oC, aluminium doping levels of 0.9 wt.% were preferable to achieve ZnO:Al films with optical and structural qualities as required for solar cell applications.

Enhancement of the Quality of the ZnO Thin Films by Optimizing the Process Parameters of High-Temperature RF Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 581-584
Author(s):  
Chong Mu Lee ◽  
Choong Mo Kim ◽  
Sook Joo Kim ◽  
Yun Kyu Park
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Chamber Pressure ◽  
Zno Films ◽  
Band Edge Emission ◽  
Rf Power ◽  
Zno Film

ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results confirm us that RF magnetron sputtering offers ZnO films with a lower density of crystallographic defects. ZnO films with a high quality can be obtained by optimizing the substrate temperature, RF power, and pressure of the RF magnetron sputtering process.

Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6311-6316 ◽  
Author(s):  
Pongladda Panyajirawut ◽  
Nattha Pratumsuwan ◽  
Kornkamon Meesombad ◽  
Kridsana Thanawattana ◽  
Artit Chingsungnoen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Nitrogen Atmosphere ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Zno Film ◽  
Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

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