Explicit Quantum Drain Current Model for Symmetric Double Gate MOSFETs

2020 ◽  
Vol 61 ◽  
pp. 88-96
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Charge Density ◽  
Current Model ◽  
Mathematical Expression ◽  
Drain Current ◽  
Quantum Effects ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Double Gate ◽  
Inversion Charge

In this article, an analytical model for Double gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) is developed including Quantum effects. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for inversion charge density is obtained and the model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. Based on inversion charge density model the compact model is developed for transfer characteristics, transconductance and C-V curves of DG MOSFETs. The results of the model are compared to the simulated results. The comparison shows the accuracy of the proposed model.

Comparative Quantum Analysis of Si/Ge Channel Tri-Gate Mosfets

2019 ◽  
Vol 58 ◽  
pp. 32-39 ◽  
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Mathematical Expression ◽  
Quantum Effects ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Quantum Analysis ◽  
Charge Model ◽  
Proposed Model ◽  
High K ◽  
Channel Thickness

In this article we have developed an analytical model for Tri-gate Metal Oxide Semiconductor Field Effect Transistor (TG MOSFET) including Quantum effects for High-k/Ge material. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for charge centroid is obtained and then an inversion charge model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. The compact model is shown to reproduce transfer characteristics, transconductance and C-V curves of Tri-gate MOSFETs using the model and is compared with the device for Si/SiO2 material. The results of both the model are compared to the simulated results. The comparison shows the accuracy of the proposed model for the high-k and Ge material.

ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS

2013 ◽  
Vol 12 (01) ◽  
pp. 1350005 ◽  
Author(s):  
VIMALA PALANICHAMY ◽  
N. B. BALAMURUGAN
Keyword(s):  
Numerical Solutions ◽  
Inversion Layer ◽  
Drain Current ◽  
Quantum Effects ◽  
Schrodinger Equations ◽  
Double Gate ◽  
Schrödinger Equations ◽  
Inversion Charge ◽  
Physical Insight ◽  
Quantum Mechanical Effects

An analytical model for double-gate (DG) MOSFETs considering quantum mechanical effects is proposed in this paper. Schrödinger and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum effects (QME) that influence the performance of DG MOSFETs. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion layer centroid, inversion charge, gate capacitance, drain current and transconductance. We systematically evaluate and analyze the parameters of DG MOSFETs considering QME. The analytical solutions are simple, accurate and provide good physical insight into the quantization caused by quantum confinement under various gate biases. The analytical results of this model are verified by comparing the data obtained with one-dimensional self-consistent numerical solutions of Poisson and Schrödinger equations known as SCHRED.

Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET

2019 ◽  
Vol 59 ◽  
pp. 137-148 ◽  
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Inversion Layer ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Quantum Confinement Effects ◽  
Charge Model ◽  
Proposed Model ◽  
Inversion Charge ◽  
Quantum Version ◽  
Quantum Mechanical Effects

The paper proposes analytical model for Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA-MOSFET) for germanium channel including quantum mechanical effects. It is achieved by solving coupled Schrodinger-Poisson’s equation using variational approach. The proposed model takes quantum confinement effects to obtain charge centroid and inversion charge model. By using these models the quantum version of inversion layer capacitance, inversion charge distribution function and Drain current expressions are modelled and the performance evaluation of the developed model is compared with Silicon channel GAA-MOSFET. Analytically modelled expressions are verified by comparing the model with simulation results.

scholarly journals Inversion charge density of MOS transistor with generalized logistic functions

2018 ◽  
Vol 50 (2) ◽  
pp. 225-235
Author(s):  
Tijana Kevkic ◽  
Vladica Stojanovic ◽  
Vera Petrovic ◽  
Dragan Randjelovic
Keyword(s):  
Charge Density ◽  
Inversion Layer ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Smooth Transition ◽  
Smoothing Factor ◽  
Mos Transistor ◽  
Wide Range ◽  
Inversion Charge ◽  
Quantum Mechanical Effects

In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

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