Analyzed by Kelvin Force Microscopy of PbZr0.3Ti0.7O3 Thin Films Grown on La0.5Sr0.5CoO3 or LaMnO3 Bottom Electrodes

2006 ◽  
Vol 306-308 ◽  
pp. 1295-1300
Author(s):  
J.S. Choi ◽  
J.S. Kim ◽  
I.S. Byun ◽  
B.H. Park
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Ferroelectric Domains ◽  
Pzt Films

We have investigated structural and electrical properties of PbZr0.3Ti0.7O3 (PZT) thin films deposited by pulsed laser deposition methods. In order to improve the ferroelectric properties of PZT thin films, we have controlled grain size or surface morphology by changing bottom electrode or deposition time. PZT thin films have been deposited on La0.5Sr0.5CoO3 (LSCO) or LaMnO3 (LMO) bottom electrodes with LaAlO3 substrates during different deposition times. X-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented with their c-axes normal to the substrates. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed alternation of grain sizes (80~180 nm) by using atomic force microscopy mode and surface potential distribution and retention behavior of ferroelectric domains by using Kelvin force microscopy mode. A PZT/LMO structure has shown superior ferroelectric and retention properties to a PZT/LSCO structure.

PREPARATION AND FERROELECTRIC PROPERTIES OF LEAD-FREE A0.5Bi0.5TiO3 (A = Na OR K) THIN FILMS

2011 ◽  
Vol 18 (03n04) ◽  
pp. 121-125 ◽  
Author(s):  
Y. L. DING ◽  
X. H. ZHANG ◽  
C. H. YANG ◽  
X. Y. ZHANG ◽  
H. L. YANG
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Dielectric Constants ◽  
Lead Free ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Surface Morphologies

Both ferroelectric Na0.5Bi0.5TiO3 (NBT) and K0.5Bi0.5TiO3 (KBT) are considered as the best known lead-free materials. In this experiment, we prepared NBT and KBT thin films on Pt/TiO2/SiO2/Si substrates by metalorganic solution deposition. The structural properties and surface morphologies were measured using X-ray diffraction and atomic force microscopy. The NBT and KBT films show higher leakage currents due to the oxygen vacancies in the films. The remanent polarization and coercive field of NBT (KBT) thin film are 9 (5.2) μC/cm2 and 50 (25) kV/cm at an applied electric field of 150 kV/cm. The relative dielectric constants of NBT and KBT are 340 and 316 at 1 MHz, respectively.

Low Resistivity Hafnium Nitride Thin Films Deposited by Inductively Coupled Plasma Assisted Magnetron Sputtering in Microelectronics

2021 ◽  
Vol 21 (7) ◽  
pp. 4129-4132
Author(s):  
Sung-Yong Chun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Inductively Coupled Plasma ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Hafnium Nitride ◽  
Atomic Force ◽  
Structural And Electrical Properties

Hafnium nitride (HfN) thin films with low electrical resistivity were obtained by inductively coupled plasma assisted magnetron sputtering as a function of ICP power. Microstructural, crystallographic and sheet resistance characterizations of HfN films were performed by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and 4 point probe method. The results show that ICP has significant effects on coating’s microstructure, structural and electrical properties of HfN films. With an increase in ICP power, thin film microstructure evolved from a porous columnar structure to a highly dense one. HfN thin films with different crystal structure and phases were obtained as a function of ICP power. The minimum resistivity of 125 µΩ-cm, the smoothest surface morphology with Ra roughness of 5.9 nm were obtained for the HfN films deposited at ICP power of 200 W.

Effect of Bottom Electrodes on Structural and Electrical Properties of Laser Ablated SrBi2Ta2O9 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Rasmi R. Das ◽  
W. Pérez ◽  
P. Bhattacharya ◽  
Ram. S. Katiyar
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ferroelectric Properties ◽  
High Resistivity ◽  
Emission Model ◽  
X Ray Diffraction ◽  
Oxide Electrodes ◽  
Maximum Value ◽  
Structural And Electrical Properties ◽  
Raman Modes

AbstractWe have grown SrBi2Ta2O9 (SBT) thin films on various bottom electrodes such as Pt/TiO2/SiO2/Si (Pt) and LaNiO3/Pt/TiO2/SiO2/Si (LNO) substrates. The substrate temperature and oxygen pressure for the SBT film was maintained at 500 °C and 200 mTorr. As-grown films were post-annealed at a temperature of 800 °C. X-ray diffraction studies revealed that as-grown films were amorphous and crystallized to single phase after annealing. The difficulty of obtaining lowest Raman modes of SBT on platinized silicon substrate was overcome by using conducting oxide electrodes. Films grown on platinized silicon showed maximum value of remanent polarization (2Pr ∼ 21.5 μC/cm2) with coercive field (Ec) of ∼ 67 kV/cm. The degradation of ferroelectric properties of the films was observed with the introduction of 50 nm conducting LaNiO3 electrode at the interface of Pt and SBT film, which was attributed to high resistivity of the oxide electrode layers. Leakage current density was studied with the consideration of the Schottky emission model. The barrier height of the films grown on Pt and LNO were estimated to be 1.27 eV and 1.12 eV, respectively. The reduction of barrier height was attributed to the lower work function of the LNO electrode.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

scholarly journals Optical, Structural and Electrical Properties of Electrochemical Synthesis of Thin Film of Polyaniline

2018 ◽  
Vol 15 (1) ◽  
pp. 73-80 ◽  
Author(s):  
Baghdad Science Journal
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Morphological Studies ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Structural And Electrical Properties ◽  
A Cell ◽  
Ft Ir ◽  
Ir And Raman

Polyaniline membranes of aniline were produced using an electrochemical method in a cell consisting of two poles. The effect of the vaccination was observed on the color of membranes of polyaniline, where analysis as of blue to olive green paints. The sanction of PANI was done by FT-IR and Raman techniques. The crystallinity of the models was studied by X-ray diffraction technique. The different electronic transitions of the PANI were determined by UV-VIS spectroscopy. The electrical conductivity of the manufactured samples was measured by using the four-probe technique at room temperature. Morphological studies have been determined by Atomic force microscopy (AFM). The structural studies have been measured by (SEM).

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

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