Defect Control for Superior Properties in K0.5Na0.5NbO3 Single Crystals

2007 ◽  
Vol 350 ◽  
pp. 85-88 ◽  
Author(s):  
Yoichi Kizaki ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Single Crystals ◽  
Leakage Current ◽  
Remanent Polarization ◽  
Flux Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Defect Control ◽  
Oxidative Condition ◽  
Large Leakage Current ◽  
Large Remanent Polarization

Single crystals of K0.47Na0.53NbO3 (KNN) and Mn-substituted KNN (Mn-KNN, K0.53Na0.47Mn0.004Nb0.996Oy) were grown by a flux method, and the influence of lattice defects on the polarization and leakage current properties was investigated. As-grown KNN did not show an apparent polarization hysteresis loop due to its large leakage current (~10-3 A/cm2). The substitution of 0.4%-Mn at the Nb site and subsequent annealing under a moderate oxidative condition were effective in suppressing the leakage current of KNN crystals. 0.4%-Mn-KNN annealed at 1100°C in air exhibited a low leakage current (~10-8 A/cm2), a relatively large remanent polarization of 40 μC/cm2 and a coercive field of 12 kV/cm at 25°C. The oxidation of Mn and Nb ions during annealing in air is found to play an essential role in the low leakage current of Mn-KNN.

Influence of Oxygen Vacancies on the Polarization Properties in Bi4Ti3O12 Ferroelectric Single Crystals

2006 ◽  
Vol 320 ◽  
pp. 19-22 ◽  
Author(s):  
Yuji Noguchi ◽  
Takahiro Matsumoto ◽  
Masaru Miyayama
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Leakage Current ◽  
Oxygen Vacancies ◽  
Remanent Polarization ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High Pressure Oxygen ◽  
Electron Holes ◽  
Large Remanent Polarization

Measurements of the leakage-current and polarization properties in bismuth titanate (Bi4Ti3O12) along the a axis show that the crystals grown in air followed by air annealing at 700oC had a superior remanent polarization of 48 μC/cm2 as well as a low leakage current density of the order of 10-9 A/cm2. The annealing at a high oxygen partial pressure of 35MPa (700oC) resulted in a higher leakage current, indicating that electron holes arising from the incorporation of oxygen at oxygen vacancies act as detrimental carriers for electrical conduction at room temperature. A crystal growth under high-pressure oxygen atmosphere and subsequent annealing at a moderate oxygen partial pressure is proposed to be advantageous for suppressing the vacancy formation and for attaining a large remanent polarization as well as a high insulating property of the Bi4Ti3O12 system.

Defect control for low leakage current in K0.5Na0.5NbO3 single crystals

2006 ◽  
Vol 89 (14) ◽  
pp. 142910 ◽  
Author(s):  
Yoichi Kizaki ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Single Crystals ◽  
Leakage Current ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Defect Control

Crystal Growth and Ferroelectric Properties in Bi0.5K0.5TiO3-Bi0.5Na0.5TiO3 Crystals

2010 ◽  
Vol 445 ◽  
pp. 7-10 ◽  
Author(s):  
Akifumi Morishita ◽  
Yuuki Kitanaka ◽  
Makoto Izumi ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Solid Solution ◽  
Crystal Growth ◽  
Single Crystals ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Flux Growth ◽  
Flux Method ◽  
Large Remanent Polarization ◽  
Soaking Temperature

Single crystals of x (Bi0.5K0.5)TiO3-(1-x)(Bi0.5Na0.5)TiO3 (BKT-BNT) solid solution were grown by a flux method, and their ferroelectric properties were investigated along [100]cubic (the cubic notation). While the flux growth soaked at 1250 °C led to the crystals with a composition of x less than 0.14, the crystals with x of 0.45 were obtained by decreasing soaking temperature to 1150 °C. The crystals of BKT-BNT (x = 0.45) exhibited a relatively large remanent polarization of 39  C/cm2 and a low coercive field of 23 kV/cm.

Effect of Characteristics of SrRuO3 Buffer Layer on the Ferroelectric Properties of (Pb0.97La0.30)(Zr0.66Ti0.34)O3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Yu-Jen Chen ◽  
Gwo Jamn ◽  
Kuo-Shung Liu ◽  
I-Nan Lina
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Low Leakage ◽  
Low Leakage Current ◽  
C 30 ◽  
Plzt Thin Films ◽  
Large Remanent Polarization

AbstractA two-step pulsed laser deposition (PLD) process, including PLD at a substrate temperature lower than 150°C and rapid-thermal-annealing (RTA) at around 550°C (30 s), has been successfully applied for growing (Pb0.97La0.03)(Zr0.66Ti0.034)0.9875O3, PLZT, thin films. Interdiffusion between layers is pronouncedly suppressed due to the presence of the SrRuO3 layer, which markedly improves the electrical properties of PLZT films. The PLZT films thus obtained exhibit large remanent polarization P,=19 µC/cm2 (with coercive force Ec=78 kV/cm), low leakage current density J11≤8 × 1O−6 A/cm2 (up to 400 kV/cm) and fatigue free characteristics.

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

Sign in / Sign up

Export Citation Format

Share Document