Surface Morphology, Crystal Orientation and Scratch Properties of Au/NiCr/Ta Multi-Layered Metallic Films

2007 ◽  
Vol 353-358 ◽  
pp. 1863-1866
Author(s):  
Wu Tang ◽  
Long Jiang Deng ◽  
Ke Wei Xu ◽  
Jian Lu
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Crystal Orientation ◽  
Scratch Test ◽  
Test Method ◽  
Metallic Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Friction Mode

The crystal orientation, surface morphology, surface roughness and scratch properties of Au/NiCr/Ta multi-layered metallic films was examined by X-ray diffraction (XRD), atomic force microscopy (AFM) and a scratch test method, respectively. It was clarified that the surface morphology and surface roughness depend on the substrate temperature. The surface roughness decreases from 4.259nm to 2.935nm when substrate temperature changed from 100°C to 180°C, and then increases when substrate temperature above 180°C. The XRD revealed that there are only Au diffraction peaks with highly textured having a Au-(111) or a mixture of Au-(111) and Au-(200) orientation. The micro-scratch test reveals that both modes can be used for conventionally critical load determination, but the friction mode can additionally reflect the changes at different metallic film layers, the critical characteristic load was not sensitive to substrate temperature.

Growth of Germanium on Porous Silicon (001)

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Porous Si ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

2016 ◽  
Vol 858 ◽  
pp. 233-236 ◽  
Author(s):  
Nadeemullah A. Mahadik ◽  
Robert E. Stahlbush ◽  
Eugene A. Imhoff ◽  
M.J. Tadjer ◽  
G.E. Ruland ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
High Temperature ◽  
Surface Morphology ◽  
Substrate Surface ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Annealing ◽  
Edge Dislocations

Basal Plane Dislocations (BPD) intersecting the SiC substrate surface were converted to threading edge dislocations (TED) by high temperature annealing of the substrates in the temperature range of 1750 °C – 1950 °C. Successively, epitaxial growth on annealed as well as non-annealed samples was performed, concurrently, to investigate the effect of the substrate annealing on BPD mitigation in the epilayers. For the 1950 °C/10min anneal, a 3x reduction in BPD density was observed. Additionally, surface roughness measured using atomic force microscopy revealed no degradation in surface morphology of the grown epilayers after annealing.

SURFACE MORPHOLOGY AND PHOTOLUMINESCENCE CHARACTERISTICS OF Sm-DOPED YVO4 THIN FILMS

2007 ◽  
Vol 14 (05) ◽  
pp. 873-878 ◽  
Author(s):  
HYUN KYOUNG YANG ◽  
JONG WON CHUNG ◽  
BYUNG KEE MOON ◽  
BYUNG CHUN CHOI ◽  
JUNG HYUN JUNG ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Photoluminescence Intensity ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Zircon Structure ◽  
Substrate Temperatures

Surface morphology and crystallinity of YVO 4: Sm 3+ thin films have an influence on the photoluminescence characteristics. The YVO 4: Sm 3+ films have been deposited on Al 2 O 3 (0001) substrates using pulsed laser deposition method. The films were grown at the various substrate temperatures changing from 500 to 700°C. The crystallinity and surface morphology of the films were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The results of XRD showed that YVO 4: Sm 3+ films had a zircon structure and AFM study revealed that the films consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The photoluminescence spectra were measured at room temperature and the emitted radiation was dominated by the red emission peak at 620 nm radiated from the transition of 5 D 0-7 F 2. The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the substrate temperature. The surface roughness and photoluminescence intensity of the films showed similar behavior as a function of substrate temperature.

Effect of Borax Content on Composition and Microstructure of Boride Layer by Electrodeposition

2011 ◽  
Vol 179-180 ◽  
pp. 508-512 ◽  
Author(s):  
Hai Li Yang ◽  
Ning He ◽  
Guo Zhang Tang ◽  
Yun Gang Li ◽  
Yu Zhu Zhang
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Glow Discharge ◽  
Surface Morphology ◽  
Molten Salts ◽  
Boride Layer ◽  
Silicon Steel ◽  
Force Microscopy ◽  
Atomic Force ◽  
Compositional Depth Profile

Boronizing of silicon steel is performed by electrodeposition in KCl-NaCl-NaF-Na2B4O710H2O molten salts with different amounts of borax. The effect of borax content on composition and microstructure of boride layer is studied. The compositional depth profile of boride layer is measured using the glow discharge spectrometry (GDS) and the depth from the surface to the substrate is taken as the layer thickness. The surface morphology is studied by atomic force microscopy (AFM). It is found that the thickness of the boride layer reached maximum values when the borax content is 0.05mol. The roughness decreases with raising borax content from 0.01 to 0.05mol while the further increase of borax content from 0.05 to 0.1mol results in increase of roughness. The boride layer formed at borax content 0.05 mol shows smallest values of surface roughness.

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

2004 ◽  
Vol 14 (03) ◽  
pp. 756-761 ◽  
Author(s):  
D. BUTTARI ◽  
A. CHINI ◽  
A. CHAKRABORTY ◽  
L. MCCARTHY ◽  
H. XING ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Inductively Coupled Plasma ◽  
Laser Interferometry ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Atomic Force ◽  
Template Process ◽  
Wide Range

Inductively coupled plasma (ICP) etching of GaN with high selectivity over Al .22 Ga .78 N in BCl 3/ SF 6 mixtures has been studied. Selectivity and surface morphology were investigated over a wide range of pressures (3.75–37.5mTorr), RF powers (30–120 W), ICP powers (100–400 W), and SF 6/ BCl 3 ratios (0.1–0.7). Higher pressures, lower dc biases, and higher SF 6/ BCl 3 ratios increased the GaN to AlGaN selectivity. Selectivities up to 25 were measured by laser interferometry. A root mean square (rms) surface roughness of 0.67 nm was measured by atomic force microscopy (AFM) after removal of 0.5 μm from a GaN template (process selectivity: 15, as-grown rms surface roughness: 0.56 nm). A degradation in surface morphology, with the gradual formation of pits, was observed for selectivities above 10.

Effect of Heat Treatment on Surface Morphology of Titanium

2015 ◽  
Vol 1125 ◽  
pp. 445-449
Author(s):  
Kwok Joon Tan ◽  
Sahkila Mahmod ◽  
M.A.A. Wahab ◽  
Maizlinda Izwana Idris ◽  
Hasan Zuhudi Abdullah
Keyword(s):  
Heat Treatment ◽  
Surface Roughness ◽  
Surface Morphology ◽  
High Purity ◽  
Force Microscopy ◽  
Air Atmosphere ◽  
Atomic Force ◽  
Sudden Decrease ◽  
Titanium Foils ◽  
Purity Titanium

Alkali and heat treatments were first introduced by Kim et al. to prepare a bioactive surface on titanium. This method has been proven very effective and widely used in biomaterial researches to promote titanium osteointegration. This study aims to investigate further the effect of heat treatment on surface morphology of high purity titanium. High purity titanium foils were immersed in 5 M NaOH at 60°C for 24 hours followed by heat treatment at 400°C, 500°C, 600°C, 700°C and 800°C for 1 hour in air atmosphere. The surface morphology was examined using Field Emission Scanning Electron Microscope (FESEM). The surface topography and surface roughness were obtained using Atomic Force Microscopy (AFM). A structure transformation accompanied by significant grain growth were observed as temperature increased from 400°C to 800°C. As temperature increased, the grain coarsened and became larger in size which is in good agreement with the increasing surface roughness. A sudden decrease in surface roughness of titanium at 800°C might be due to the spallation of oxide layer.

A Scanning Electron and Atomic Force Microscopy Study of the Surface Morphology and Composition of CsI Films as Affected by Evaporation Rate and Humid-Air Exposure

2005 ◽  
Vol 11 (2) ◽  
pp. 124-132 ◽  
Author(s):  
Giorgio S. Senesi ◽  
Mariangela A. Nitti ◽  
Antonio Valentini
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Slow Rate ◽  
Evaporation Rate ◽  
Humid Air ◽  
Air Exposure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

Evaporation rate and subsequent exposure to humid air affect the surface morphology and composition of cesium iodide (CsI) films and, in turn, their photoemissive efficiency when used as photocathodes. The surface morphology and elemental composition of 300-nm-thick CsI films grown at two different rates (1 nm/s and 0.04 nm/s), both freshly evaporated and after 24-h exposure to humid air were investigated by means of atomic force microscopy and scanning electron microscopy/electron diffraction spectroscopy. The CsI film freshly evaporated at a slow rate exhibited a granular surface presenting circular holes or craters where the CsI material was moved from the center to the boundaries. After 24-h exposure to humid air, this film coalesced in large grain showing a marked increase of surface roughness. Conversely, the CsI film grown at a fast rate mostly retained its original surface uniformity and homogeneity with no presence of holes and craters after 24-h exposure to humid air. Further, surface roughness and average peak height decreased, but the surface coalesced in large grains spaced by small fractures where the CsI coverage was almost lost. In conclusion, the films grown at a fast evaporation rate were affected by 24-h exposure to humid air less than those grown at a slow rate, and are thus expected to possess a greater long-term stability.

The Study on Surface Morphology and Residual Stress of Al2O3 Film

2013 ◽  
Vol 275-277 ◽  
pp. 2006-2009
Author(s):  
Ying Dong Pu ◽  
Wu Tang ◽  
Yu Tong Yang
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Important Condition ◽  
Force Microscopy ◽  
Atom Force Microscopy ◽  
Film Microstructure

The aluminum oxide (Al2O3) films are grown on n-type Si-(100) substrate by electron beam evaporation at substrate temperature 500°C~800°C. The Al2O3film surface morphology is characterized by atom force microscopy (AFM) to evaluate the grain microstructure, and the residual stress was investigated by wafer stress analyzer. The results show that different substrate temperature is important condition to the properties of Al2O3film. Microstructure characterization indicates that the film surface at low substrate temperature is smoother, and the surface roughness of these Al2O3films is in the range 1-6 nm. The residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N2condition. It also can be concluded that the microstructure is correlated with residual stress.

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