Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS

The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.

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Characterisation of amorphous silica in air-oxidised Ti3SiC2 at 500–1000°C using secondary-ion mass spectrometry, nuclear magnetic resonance and transmission electron microscopy

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2010.02.005 ◽

2010 ◽

Vol 121 (3) ◽

pp. 453-458 ◽

Cited By ~ 5

Author(s):

W.K. Pang ◽

I.M. Low ◽

J.V. Hanna

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

Nuclear Magnetic Resonance ◽

Magnetic Resonance ◽

Amorphous Silica ◽

Secondary Ion Mass Spectrometry ◽

Transmission Electron ◽

Ion Mass Spectrometry ◽

Secondary Ion

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In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry

Microscopy and Microanalysis ◽

10.1017/s1431927618002398 ◽

2018 ◽

Vol 24 (S1) ◽

pp. 380-381 ◽

Cited By ~ 1

Author(s):

Santhana Eswara ◽

Lluis Yedra ◽

Alisa Pshenova ◽

Varun Sarbada ◽

Jean-Nicolas Audinot ◽

...

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

Secondary Ion Mass Spectrometry ◽

Correlative Microscopy ◽

Transmission Electron ◽

Ion Mass Spectrometry ◽

Secondary Ion

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The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Thin Solid Films ◽

10.1016/j.tsf.2015.01.025 ◽

2015 ◽

Vol 577 ◽

pp. 11-16 ◽

Cited By ~ 11

Author(s):

M.N. Drozdov ◽

Y.N. Drozdov ◽

N.I. Chkhalo ◽

V.N. Polkovnikov ◽

N.N. Salashchenko ◽

...

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Secondary Ion Mass Spectrometry ◽

Barrier Layers ◽

Transmission Electron ◽

Thin Carbon ◽

Secondary Ion

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Cellular and subcellular localization of chromium in the crab Liocarcinus puber (Brachyrhyncha) by transmission electron microscopy, secondary ion mass spectrometry and electron microprobe analysis

BioMetals ◽

10.1007/bf00143384 ◽

1995 ◽

Vol 8 (3) ◽

Cited By ~ 1

Author(s):

Colette Chassard-Bouchaud ◽

Michelle Hubert ◽

Fran�oise Escaig ◽

Ren�Louis Inglebert

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

Subcellular Localization ◽

Electron Microprobe ◽

Microprobe Analysis ◽

Electron Microprobe Analysis ◽

Secondary Ion Mass Spectrometry ◽

Transmission Electron ◽

Secondary Ion

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Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888195 ◽

2005 ◽

Author(s):

P. Cosemans ◽

M. D'Olieslaeger ◽

W. de Ceuninck ◽

L. de Schepper ◽

L. Stals

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

Secondary Ion Mass Spectrometry ◽

Analytical Transmission Electron Microscopy ◽

Transmission Electron ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Incorporation of 13C labelled shoot residues in Lumbricus terrestris casts: A combination of transmission electron microscopy and nanoscale secondary ion mass spectrometry

Soil Biology and Biochemistry ◽

10.1016/j.soilbio.2015.10.018 ◽

2016 ◽

Vol 93 ◽

pp. 8-16 ◽

Cited By ~ 15

Author(s):

A. Vidal ◽

L. Remusat ◽

F. Watteau ◽

S. Derenne ◽

K. Quenea

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

Secondary Ion Mass Spectrometry ◽

Lumbricus Terrestris ◽

Transmission Electron ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Time of flight secondary ion mass spectrometry and high-resolution transmission electron microscopy/energy dispersive spectroscopy: A preliminary study of the distribution of Cu2+ and Cu2+/Pb2+ on a Bt horizon surfaces

Journal of Hazardous Materials ◽

10.1016/j.jhazmat.2011.08.059 ◽

2011 ◽

Vol 195 ◽

pp. 422-431 ◽

Cited By ~ 89

Author(s):

B. Cerqueira ◽

F.A. Vega ◽

C. Serra ◽

L.F.O. Silva ◽

M.L. Andrade

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Energy Dispersive Spectroscopy ◽

Secondary Ion Mass Spectrometry ◽

Energy Dispersive ◽

Transmission Electron ◽

Preliminary Study ◽

Secondary Ion

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Residual damage in B+ and –implanted Si

Canadian Journal of Physics ◽

10.1139/p85-140 ◽

1985 ◽

Vol 63 (6) ◽

pp. 863-869 ◽

Cited By ~ 12

Author(s):

W. Vandervorst ◽

D. C. Houghton ◽

F. R. Shepherd ◽

M. L. Swanson ◽

H. H. Plattner ◽

...

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

Secondary Ion Mass Spectrometry ◽

Nuclear Reaction Analysis ◽

Furnace Annealing ◽

Projected Range ◽

Transmission Electron ◽

Residual Damage ◽

Secondary Ion

The residual damage left after furnace-annealing Si wafers implanted with 30-keV B+ or 120-keV [Formula: see text] ions has been investigated for doses of 3–5 × 1015 ions∙cm−2. Transmission electron microscopy, Rutherford backscattering, and channeling were used to study the morphology and distribution of the damage while the B and F content and their depth distributions were determined by nuclear reaction analysis and secondary-ion mass spectrometry. For B+-implanted samples the residual damage is concentrated in a band at a depth corresponding to the B projected range. For [Formula: see text]-implanted samples the residual damage is located mainly in the region of the as-implanted amorphous–crystalline interface.

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