Elemental mapping of Neuromelanin organelles of human Substantia Nigra: correlative ultrastructural and chemical analysis by analytical transmission electron microscopy and nano-secondary ion mass spectrometry

2016 ◽  
Vol 138 (2) ◽  
pp. 339-353 ◽  
Author(s):  
Antje Biesemeier ◽  
Oliver Eibl ◽  
Santhana Eswara ◽  
Jean-Nicolas Audinot ◽  
Tom Wirtz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Chemical Analysis ◽  
Substantia Nigra ◽  
Secondary Ion Mass Spectrometry ◽  
Analytical Transmission Electron Microscopy ◽  
Elemental Mapping ◽  
Transmission Electron ◽  
Secondary Ion

scholarly journals In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry

2018 ◽  
Vol 24 (S1) ◽  
pp. 380-381 ◽  
Author(s):  
Santhana Eswara ◽  
Lluis Yedra ◽  
Alisa Pshenova ◽  
Varun Sarbada ◽  
Jean-Nicolas Audinot ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Correlative Microscopy ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS

2010 ◽  
Vol 434-435 ◽  
pp. 169-172 ◽  
Author(s):  
Wei Kong Pang ◽  
It Meng Low ◽  
J.V. Hanna
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Amorphous Silica ◽  
Direct Evidence ◽  
Secondary Ion Mass Spectrometry ◽  
Amorphous Sio2 ◽  
Transmission Electron ◽  
First Time ◽  
Secondary Ion

The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.

Residual damage in B+ and –implanted Si

1985 ◽  
Vol 63 (6) ◽  
pp. 863-869 ◽  
Author(s):  
W. Vandervorst ◽  
D. C. Houghton ◽  
F. R. Shepherd ◽  
M. L. Swanson ◽  
H. H. Plattner ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Nuclear Reaction Analysis ◽  
Furnace Annealing ◽  
Projected Range ◽  
Transmission Electron ◽  
Residual Damage ◽  
Secondary Ion

The residual damage left after furnace-annealing Si wafers implanted with 30-keV B+ or 120-keV [Formula: see text] ions has been investigated for doses of 3–5 × 1015 ions∙cm−2. Transmission electron microscopy, Rutherford backscattering, and channeling were used to study the morphology and distribution of the damage while the B and F content and their depth distributions were determined by nuclear reaction analysis and secondary-ion mass spectrometry. For B+-implanted samples the residual damage is concentrated in a band at a depth corresponding to the B projected range. For [Formula: see text]-implanted samples the residual damage is located mainly in the region of the as-implanted amorphous–crystalline interface.

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