scholarly journals Comparison of Thermal Stability of Epitaxially Grown (La0.5Sr0.5)CoO3 and (La0.6Sr0.4)MnO3 Thin Films Deposited on Si Substrate

2010 ◽  
Vol 445 ◽  
pp. 160-163
Author(s):  
Shigeki Sawamura ◽  
Naonori Sakamoto ◽  
De Sheng Fu ◽  
Kazuo Shinozaki ◽  
Hisao Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Thermal Stability Of

Thermal stability of bottom electrode thin films (La0.5Sr0.5)CoO3 (LSCO) and (La0.6Sr0.4)MnO3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 cm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mcm). The film does not decompose after thermal processing at 900 °C. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

UNDERLAYER ROUGHNESS INFLUENCE ON THE PROPERTIES OF Ag THIN FILM

2008 ◽  
Vol 15 (06) ◽  
pp. 787-791
Author(s):  
PEI ZHAO ◽  
RENG WANG ◽  
DINGQUAN LIU ◽  
FENGSHAN ZHANG ◽  
WEITAO SU ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Optical Constants ◽  
Reflectance Spectrum ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

The effects of the roughness of ZnS underlayer on the microstructure, optical, and electrical properties of nanometer Ag thin film have been investigated in this paper. Nanometer Ag thin films in glass/ ZnS /7.5 nm Ag /30 nm ZnS stacks have been deposited and analyzed. In the stacks, the underlayers of ZnS have been sputtered with various thicknesses to generate various surface roughnesses. The X-ray diffraction (XRD) has been used to study the crystal structure of Ag films. The surface topography and the roughness of ZnS underlayer have been analyzed by atomic force microscopy. The sheet resistant will become larger as the increasing of the roughness. The optical constants can be derived by fitting the transmission and reflectance spectrum. From optical constants comparison of Ag films, with the surface of the stack becoming rougher, it was found that the refractive index will increase but the extinction coefficient will decrease.

C− Outgrowths in C+ Thin Films of LiNbO3 on Al2O3-c

1994 ◽  
Vol 341 ◽  
Author(s):  
J. J. Kingston ◽  
D. K. Fork ◽  
F. Leplingard ◽  
F. A. Ponce
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Optical Losses ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preferential Nucleation ◽  
Thin Film Waveguides

AbstractThin-film waveguides of LiNbO3 have been grown on Al2O3-c by off-axis rf magnetron sputtering. The films have been characterized optically by prism coupling measurements, crystallographically by x-ray diffraction, and morphologically by atomic force microscopy. We find that optical losses can be dominated by scattering from large outgrowths that litter the surface of the film. These outgrowths are c− grains imbedded in a c+ matrix. Although some grains nucleate c−, others have their polarity reversed from c+ to c− after nucleation. A model will be presented to explain the preferential nucleation of c+ grains on Al2O3-c. The c− grains grow much faster than the c+ ones because of attractive coulombic forces between the c− grains and the ionized Li and Nb species in the sputter plume.

Studies on the Microstructure and Properties of TiO2/(Ag) Thin Films

2012 ◽  
Vol 503-504 ◽  
pp. 378-381
Author(s):  
Fei Gao ◽  
Xiao Yan Liu ◽  
Li Yun Zheng ◽  
Mei Xia Li ◽  
Rui Jiao Jiang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Force Microscopy ◽  
Anatase Phase ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Microstructure And Properties ◽  
Atomic Force

TiO2/(Ag) thin films were prepared by DC magnetron sputtering. The effects of Ag-doping on the microstructure and properties were compared studied by atomic force microscopy (AFM), X-ray diffraction (XRD), UV-Vis spectra and photocatalysis tesing, respectively. The results show that when doped with Ag, the surface of TiO2 thin film was improved and the growth of anatase phase was promoted. The absoption properties of Ag-doped TiO2 thin film was enhanced dramatically compared with that of TiO2 thin film. And the photocatalysis properties of Ag-doped TiO2 thin film was increased twice as well.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

Biocompatibility Studies of the Nitinol Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fibroblast Cell ◽  
Vero Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fetal Bovine ◽  
Fibroblast Cell Lines

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

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