Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films for Microactuator Applications

2011 ◽  
Vol 80-81 ◽  
pp. 13-17 ◽  
Author(s):  
Yu Hua Yang ◽  
Zhen Yu Zhao ◽  
Xin Feng Guan ◽  
Xiu Jian Chou

(Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO2/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO2/Si (100) substrates showed strong (111) preferred orientation. The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of micro-actuators.

2012 ◽  
Vol 503 ◽  
pp. 375-380 ◽  
Author(s):  
Wen Ping Geng ◽  
Xiu Jian Chou ◽  
Yong Bo Lv ◽  
Ji Jun Xiong ◽  
Wen Dong Zhang

(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.


2014 ◽  
Vol 924 ◽  
pp. 36-40
Author(s):  
Chun Xiao Yue ◽  
Peng Ding ◽  
Yu Zhao ◽  
Li Yi Shi

Silica microspheres coated by nanoZrO2 were prepared by the sol-gel process using butoxidesolution (TBOZ) as precursor. The nanomicrospheres were formed via hydrolysis and condension reaction of metal alkoxides with the hydroxyl (-OH) of silica microspheres by form Zr-O-Si bonds. The samples were characterized by X-ray diffraction, FT-IR and SEM. Presence of the FT-IR bands with frequencies ranging from 800 to 900 cm-1 can be assigned to SiO vibration, and to ZrOSi stretching vibration. XRD analysis shows obviously the characteristic diffraction peaks of tetragonal (T-ZrO2) in the sample by heat-treatment at 400°C. The SEM image showed that the surface layers of silica microspheres were coated by nanoparticles.


2014 ◽  
Vol 884-885 ◽  
pp. 363-369
Author(s):  
Xiao Jie Chen ◽  
Cheng Jun Qiu ◽  
Hong Mei Liu ◽  
Yan Wei Dou ◽  
Shan Shan Cao

The preparation of complex PZT with high d31 piezoelectric performance, which is used to the energy harvesting cantilever in vibration mode, is discussed in this paper. The Si/SiO2/Cr/Au/PT/PZT/PT structure base on (100) silicon crystallographic is growth through a PT transition layer before coating Sol-gel PZT film, which is in favor of the PZT film polarization processing in d31 shear mode. It is shown that the PZT film present the perovskite phase after optimize annealing at 700°C by XRD analysis. Piezoelectric properties test indicated that the PZT film has the coercive field at 23kV/cm and the remnant polarization is 60μC/cm2. The silicon-based cantilever with complex PZT film fabricated by MEMS technology is also given in the paper.


2012 ◽  
Vol 624 ◽  
pp. 34-37
Author(s):  
Xiao Yan Zhang ◽  
Wen Shu Hu ◽  
Xi Wei Qi ◽  
Gui Fang Sun ◽  
Jian Quan Qi ◽  
...  

Bi2Al4O9 powders were prepared by sol-gel process. The precursors were heated at 500-800°C for 2h to obtain Bi2Al4O9 powder and X-ray diffraction (XRD), Differential thermal analysis (DTA), thermogravimetric analysis (TG), field emission scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FT-IR) techniques were used to characterize precursor and derived oxide powders. XRD analysis show that the powder is still amorphous after calcined at 500°C. The peaks of Bi2Al4O9 become sharp after calcined at 575°C though still existing some amorphous phase. After calcining at 675-800°C, the powder has fully turned into pure Bi2Al4O9 phase. The crystallization process can also be confirmed by DTA-TG and IR. Calcining the precursor at 575°C, the absorption bands at 527 cm-1, 738 cm-1, 777 cm-1, and 919 cm-1are observed, which are assigned to Bi2Al4O9 and becoming stronger and sharper with the increase of temperature.


1999 ◽  
Vol 14 (9) ◽  
pp. 3559-3566 ◽  
Author(s):  
Shaw-Bing Wen ◽  
Nan-Chung Wu ◽  
Sheng Yang ◽  
Moo-Chin Wang

The activation energy for crystallization of β-spodumene in TiO2 added Li2O–Al2O3–4SiO2 (LAS) precursor powders by a sol-gel process was studied by using isothermal and nonisothermal methods. Nonisothermal kinetics for the LAS precursor powder system were investigated using differential thermal analysis (DTA) and quantitative x-ray diffraction (XRD) analysis. The rate of crystallization of LAS precursor powders decreased as the TiO2 content increased. For samples with addition of 0, 5.0, and 10.0 wt% TiO2, the activation energies for crystallization by DTA evaluation were 165.06, 194.46, and 205.38 kJ/mol, respectively. According to the quantitative XRD method, the values computed by the Johnson–Mehl–Avrami equation were 162.54, 189.42, and 196.14 kJ/mol, respectively. The values obtained by isothermal and nonisothermal kinetic methods from DTA and XRD analyses were in good agreement. The growth morphology parameters were 0.59, 0.70, and 0.76, respectively, for the LAS precursor powder with TiO2 addition of 0, 5.0, and 10.0 wt%, showing a rodlike growth. In the LAS precursor powder system, TiO2 did not act as the nucleative agent.


2012 ◽  
Vol 217-219 ◽  
pp. 733-736
Author(s):  
Xiu Mei Han ◽  
Shu Ai Hao ◽  
Ying Ling Wang ◽  
Gui Fang Sun ◽  
Xi Wei Qi

Zn2SiO4:Eu3+, Dy3+ phosphors have been prepared through the sol-gel process. X-ray diffraction (XRD), thermogravimetric and ddifferential thermal analysis (TG-DTA), FT-IR spectra and photoluminescence spectra were used to characterize the resulting phosphors. The results of XRD indicated that the phosphors crystallized completely at 1000oC. In Zn2SiO4:Eu3+,Dy3+ phosphors, the Eu3+ and Dy3+ show their characteristic red(613nm, 5D0-7F2), blue (481nm, 4F9/2–6H15/2) and yellow (577nm, 4F9/2–6H13/2) emissions.


2010 ◽  
Vol 97-101 ◽  
pp. 1611-1615 ◽  
Author(s):  
Qing Wang ◽  
Xin Li Li ◽  
Wei Nie ◽  
Yong Mei Xia ◽  
Jian Feng Dai

The ZnO/TiO2 composite films were deposited over glass using spin coating technique by sol-gel process. Single-walled carbon nanotubes (SWNTs) were used to modify the ZnO/TiO2 films successfully in this paper. The structure and composition of the ZnO/TiO2 composite and SWNTs doped ZnO/TiO2 composite were characterized by X-ray diffraction (XRD). The morphology of samples was characterized by scanning electron microscopy (SEM). The photocatalytic activity was investigated by photocatalytic degradation of aqueous methyl orange under ultraviolet (UV) radiation. The UV-vis absorption spectra of the ZnO/TiO2 films and SWNTs doped ZnO/TiO2 films in the wavelength region 200~800 nm were obtained. The results indicate that the SWNTs addition can decrease the grain size of ZnO/TiO2, which can enhance the photocatalytic activity. UV-vis absorption spectra of SWNTs-ZnO/TiO2 showed obvious blue shifts compared with ZnO/TiO2. The optimal amount of doping SWNTs is 1% according to this research. The enhanced mechanism of the SWNTs for the photocatalytic activity in ZnO/TiO2 films was analyzed in this article.


2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.


Author(s):  
S. D. Balsure

Higher magnetic Mn doped Zn-Cr oxide nanoparticles with general compositional formula MxZn0.95-xCr0.05O have been synthesized by using sol-gel auto combustion technique. Room temperature X-ray diffraction (XRD) technique has been employed to study the structural and microstructural parameters of the as-prepared samples. XRD analysis confirms the phase purity and hexagonal wurtzite structure of all the samples. Replacement of Zn2+ ions by Mn2+ ions shifts peak positions slightly towards the lower angles which in turn expands the lattice lengths ‘a’ from 3.2487 to 3.2528 Å and ‘c’ from 5.2043 to 5.2118 Å. Crystallite size obtained from Scherrer equation was confirmed by Williamson – Hall (W-H) and size – strain plot methods (SSP). Both W-H and SSP methods reveals the tensile type strain for undoped sample and comprehensive type strain for Mn2+ doped samples. Magnetic properties were investigated by using vibrating sample magnetometer. Diluted ferromagnetic behaviour is observed for all the samples and saturation magnetization (MS) increases from 0.0514 to 0.1163 emu/gm. Two-probe technique was employed to understand the dielectric behaviour of the samples as a function of frequency. At lower frequency region, both dielectric constant () and dielectric loss tangent (tan ) shows higher values and decreases with the increasing applied frequency.


2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.


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