The Fabrication of Silicon Nanopin with CsCl Nanoislands and Dry Etching for Field Emission

2013 ◽  
Vol 562-565 ◽  
pp. 1224-1228
Author(s):  
Marina Ashmkhan ◽  
Jing Liu ◽  
Bo Wang ◽  
Fu Ting Yi

Silicon nano pin arrays with heights of 1.3-3.66um and diameter of 315-899nm, are fabricated by CsCl self-assemble for CsCl nano islands for mask and ICP etching for silicon pins. CsCl film is firstly deposited on the wafer by thermal evaporation and putted in the humid controlled environment to be developed to the CsCl islands with diameter of 341-915 nm as self-assembled technology. Then the ICP etching with SF6, CCl4, He gas is introduced to make the silicon nano pin by the mask of CsCl nano islands, and the silicon nano pins with the different height of 1.3-3.66 um are finished for field emission. The gated FEA templates are fabricated by photolithography process and the lift-off technology with Ti-Si film as the gate electrodes. The final template for field emission has the silicon nano pins with diameters of 31.7 nm on top, Ti-Ag film with thickness of 105nm and gate holes of 30um in diameter, and SU8 resist insulator structure with thickness of 4um and holes of 10um in diameter. The optimization of the fabrication process and the performance for the configuration will be made.

2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Jin Ho Lee ◽  
...  

AbstractThe good field-emission properties of carbon nanotubes coupled with their high mechanical strength, chemical stability, and high aspect ratio, make them ideal candidates for the construction of efficient and inexpensive field-emission electronic devices. The fabrication process reported here has considerable potential for use in the development of integrated radio frequency amplifiers or field emission-controllable cold electron guns for field emission displays. This fabrication process is compatible with currently used semiconductor processing technologies. Micropatterned vertically aligned carbon nanotubes were grown on planar Si surface or inside the trenches, using chemical vapor deposition, photolithography, pulsed-laser deposition, reactive ion etching, and the lift-off method. To control the field-emission current by a 3rd electrode, the gate electrode, we grew carbon nanotubes inside the trenches. This triode-type structure is the best to realize the gray-scale carbon nanotube field emission. This carbon nanotube fabrication process can be widely applied for the development of electronic devices using carbon nanotube field emitters as cold cathodes and could revolutionize the area of field-emitting electronic devices such as RF amplifiers and field emission displays.


Author(s):  
Arrigo Calzolari ◽  
Andrzej Rajca ◽  
Maria Benedetta Casu

We demonstrate the possibility to evaporate Blatter radical derivatives in a controlled environment obtaining thin films that preserve the (poly)radical magnetic character. However, their thermal evaporation is challenging. We analyse...


2007 ◽  
Vol 7 (2) ◽  
pp. 689-695 ◽  
Author(s):  
Tandra Ghoshal ◽  
Soumitra Kar ◽  
Subhajit Biswas ◽  
Gautam Majumdar ◽  
Subhadra Chaudhuri

ZnO nanotetrapods were synthesized by a simple thermal evaporation of Zn powder at a relatively low temperature ∼600 °C. The tetrapods have four legs with hexagonal cross-section. Interpenetrating growth was observed in some of these nanotetrapods. Multipod ZnO nanoforms were produced at higher temperature. The optical characterizations such as optical absorbance, photoluminescence and Raman spectroscopy reveal excellent crystal qualities of these nanoforms. The field emission studies indicated that these nanoforms could be utilized in field emission based devices.


2011 ◽  
Vol 204-210 ◽  
pp. 152-155
Author(s):  
Chao Wu ◽  
Wen Jie Zhang

Carbon nanotubes (CNTs) had good field emission ability and were adopted to form the cold cathode. The backlight field emission unit (BFEU) with CNTs as field emitter was designed and fabricated, and the detailed manufacture process was also given. The flat soda-lime glass was used as substrate plate. With the photolithography process, the indium tin oxide thin film covered on the cathode plate surface was divided into bar stripes to form the meshy bottom electrode for improving the field emission properties of CNT emitters. The sealed BFEU demonstrated better field emission performance, high luminance brightness. With the simple fabrication process, the total manufacture cost was also low.


2021 ◽  
Vol 241 ◽  
pp. 111545
Author(s):  
Howard Northfield ◽  
Oleksiy Krupin ◽  
R. Niall Tait ◽  
Pierre Berini

2002 ◽  
Vol 41 (Part 1, No. 5A) ◽  
pp. 3076-3080 ◽  
Author(s):  
Masakazu Kanechika ◽  
Noriaki Sugimoto ◽  
Yasuichi Mitsushima
Keyword(s):  

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