Tribological Properties of CVD Diamond Films against Graphite

2016 ◽  
Vol 689 ◽  
pp. 86-90
Author(s):  
Xue Cai Lei ◽  
Ke Pang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Frictional Coefficients ◽  
Hot Filament ◽  
Scanning Electron

In this investigation, micro crystalline diamond (MCD) and nanocrystalline diamond (NCD) films are deposited on cemented carbide (WC-Co) balls by hot filament chemical vapor deposition (HFCVD) technique. After deposition, MCD and NCD films are characterized by field emission scanning electron microscopy (FESEM) and Raman spectroscopy. Then frictional tests are carried out between CVD diamond coated balls and graphite. The results show that the MCD-graphite and NCD-graphite tribo-pairs exhibit comparable frictional coefficients, while the wear rate of graphite in MCD-graphite working pair is much higher than that of graphite in NCD-graphite working pair. Furthermore, the element oxygen is detected in the wear groove of graphite, suggesting the oxycarbide of working materials at the increased temperature due to the heat generated from the mechanical friction.

Growth of Nanocrystalline Diamond Films on Co-Cemented Tungsten Carbide Substrates by Hot Filament CVD

2004 ◽  
Vol 471-472 ◽  
pp. 52-58 ◽  
Author(s):  
Fang Hong Sun ◽  
Zhi Ming Zhang ◽  
H.S. Shen ◽  
Ming Chen
Keyword(s):  
Electron Microscopy ◽  
Surface Roughness ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Composite Diamond ◽  
Hot Filament

Nanocrystalline diamond films were deposited on Co-cemented carbide substrates using CH4/H2/Ar gas mixture by hot filament chemical vapor deposition (HFCVD) technique. The evidence of nanocrystallinity, smoothness and purity was obtained by characterizing the sample with scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), high-resolution transmission electron microscopy (HR-TEM) and selected-area electron diffraction (SAED). A new process was used to deposit composite diamond films by a two-step chemical vapor deposition procedure including first the deposition of the rough polycrystalline diamond and then the smooth fine-grained nanocrystalline diamond. The results show that the film consists of nanocrystalline diamond grains with sizes range from 20 to 80 nm. The Raman spectroscopy, XRD pattern, HR-TEM image and SAED pattern of the films indicate the presence of nanocrystalline diamond. Surface roughness is measured as Ra<100nm by AFM. Smooth nanocrystalline diamond layers can be deposited on conventional microcrystalline diamond layers using a two-step chemical vapor deposition by regulating the deposition parameters. These composite diamond films with the multiplayer (nanocrystalline/microcrystalline) structure have low surface roughness and high adhesive strength on WC-Co substrates. The diamond-coated tools and drawing dies with these composite coatings display excellent performances in the practical application.

DIRECT OBSERVATION OF C3N4 SINGLE CRYSTAL BY SCANNING ELECTRON MICROSCOPY

1996 ◽  
Vol 10 (13) ◽  
pp. 615-617 ◽  
Author(s):  
YAN CHEN ◽  
LIPING GUO ◽  
E.G. WANG
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
First Principles ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Nickel Substrates ◽  
Hot Filament ◽  
Scanning Electron ◽  
Good Agreement

We report the first experimental observation of C3N4 single crystals, which are about tens nanometers to several micrometers in length and hundreds nanometers in across, by scanning electron microscopy. The pure crystalline C-N solids with α- and β-phases were grown on nickel substrates by bias-assisted hot filament chemical vapor deposition (bias-HFCVD). Our experimental results are in very good agreement with recent first-principles calculations.

scholarly journals Growth of diamond by rf plasma-assisted chemical vapor deposition

1988 ◽  
Vol 3 (6) ◽  
pp. 1397-1403 ◽  
Author(s):  
Duane E. Meyer ◽  
Natale J. Ianno ◽  
John A. Woollam ◽  
A. B. Swartzlander ◽  
A. J. Nelson
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Input Power ◽  
Rf Plasma ◽  
Diamond Particles ◽  
Scanning Electron

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, rf input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4 5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

Synthesis and Cathodoluminescence of β-Ga2O3 Nanowires with Holes

2008 ◽  
Vol 8 (3) ◽  
pp. 1284-1287
Author(s):  
Xitian Zhang ◽  
Zhuang Liu ◽  
Suikong Hark
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Chemical Vapor ◽  
Oxide Nanowires ◽  
X Ray ◽  
Transmission Electron ◽  
Reactive Surfaces ◽  
Scanning Electron

Gallium oxide nanowires were synthesized on Si (001) substrate by chemical vapor deposition, using a Ga/Ga2O3 mixture as a precursor and Au as a catalyst. The structure of the as-synthesized products was examined by X-ray powder diffraction and high-resolution transmission electron microscopy, and found to be monoclinic β-Ga2O3. The morphologies of the β-Ga2O3 nanowires were characterized by scanning electron microscopy. The majority of the nanowires contain holes along their length, but a few were also found without holes. The holes are believed to be formed by the reaction of adsorbed Ga droplets on reactive terminating surfaces of the nanowires. For nanowires where these reactive surfaces are not exposed, the reaction of Ga is retarded. Cathodoluminescence (CL) of the nanowires was measured. Three emission bands centered at 376, 454, and 666 nm, respectively, were observed.

Micro, Nano and Ultranano-Crystalline Diamond Deposition

2014 ◽  
Vol 802 ◽  
pp. 168-173 ◽  
Author(s):  
Divani C. Barbosa ◽  
M.R. Baldan ◽  
V.J. Trava-Airoldi ◽  
Evaldo Jose Corat
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Vapor ◽  
Peak Shift ◽  
X Ray Diffraction ◽  
Diamond Deposition ◽  
Induced Stress ◽  
Deposition Parameters ◽  
Hot Filament ◽  
Scanning Electron

This is a comparative experimental study of the micro, nanoand ultranano-crystalline diamond deposition. The Hot Filament Chemical Vapor Deposition (HFCVD) reactor deposits the films using different deposition parameters. Scanning Electron Microscopy and Field Emission Scanning Electron Microscopy let morphology inspection. Visible-Raman scattering loaded to estimating relative induced stress, by the graphite peak shift and associated with the defect incorporation and sp2bond enhancement. The x-ray diffraction confirmed the diamond crystallinity, where Scherrer ́s equations estimate crystallite size and diamond renucleation rates. In this work we propose a defect increasing relative graphite incorporation with the transition of micro, nanoto ultranano-crystalline diamond deposition. Besides this, we propose that this increase defects follows the increase diamond renucleation rates and decreases in the induced stress films. Included is a discussion of the possible reasons for these observations.

SiGe Nanowires Grown by LPCVD: Morphological and Structural Analysis

2010 ◽  
Vol 1258 ◽  
Author(s):  
Andrés Rodríguez ◽  
Jesús Sangrador ◽  
Tomás Rodríguez ◽  
Carmen Ballesteros ◽  
Carmelo Prieto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Chemical Vapor Deposition Reactor ◽  
X Ray ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Scanning Electron

AbstractSiGe nanowires were grown by the vapor-liquid-solid method using a low pressure chemical vapor deposition reactor and different flows of the GeH4 and Si2H6 gas precursors. The morphology of the nanowires was studied by field emission scanning electron microscopy, and the length, diameter and density of nanowires were determined. Their structure and crystallinity were analyzed by transmission electron microscopy and its related techniques. Energy dispersive X-ray emission of individual nanowires as well a Raman spectroscopy were used to determine their composition and to analyze its homogeneity.

scholarly journals Filmes de diamante CVD em grandes áreas obtidos por crescimentos sucessivos em etapas

2008 ◽  
Vol 13 (3) ◽  
pp. 569-578 ◽  
Author(s):  
A.R. Alves ◽  
A. Amorim ◽  
J. Eichenberger Neto ◽  
V.J. Trava-Airoldi ◽  
E.J. Corat ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Raman Scattering Spectroscopy ◽  
Scanning Electron

Buscou-se a redução da tensão intrínseca causada pelas impurezas que se agregam no processo de crescimento de um filme de diamante obtido por deposição química a partir da fase vapor (CVD, do inglês Chemical Vapor Deposition) em um reator de filamento quente (HFCVD), sobre um substrato de silício <100> de 250 µm de espessura em uma superfície de deposição de grande área (45 cm²), através da imersão da amostra, em uma solução saturada de H2SO4 e CrO3 e, em seguida, em uma solução 1:1 de H2O2:NH4OH. Após esse procedimento, nova etapa de crescimento era realizada. O filme de diamante CVD foi identificado e caracterizado por espectroscopia de espalhamento Raman (RSS, do inglês Raman Scattering Spectroscopy) e microscopia eletrônica de varredura (SEM, do inglês Scanning Electron Microscopy). A aplicação dessa técnica mostrou bons resultados, uma vez que, em relação a resultados obtidos anteriormente, se duplicou a espessura do filme de diamante CVD depositado, obtendo menor tensão residual sobre o filme de diamante. Foram obtidos filmes de diamante CVD de espessura de 60 mm, com alta qualidade e uniformidade.

scholarly journals KARAKTERISTIK SIFAT OPTIK DAN SIFAT LISTRIK LAPISAN TIPIS KARBON AMORF TERHIDROGENASI (a-C:H) YANG DIPABRIKASI DENGAN TEKNIK RF-PECVD

2020 ◽  
Vol 15 (3) ◽  
Author(s):  
Muh Saleh
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
Scanning Electron

Lapisan tipis karbon amorf terhidrogenasi (a-C:H) telah berhasil ditumbuhkan di atas substrat kaca ITO dengan teknik Radio Frequency – Plasma Enhanced Chemical Vapor Deposition (RF–PECVD) pada frekuensi standar 13,56 MHz. Efek variasi parameter laju aliran gas metana (CH4) murni dari 40 sampai 100 sccm terhadap sifat optik dan sifat listrik lapisan a-C:H diselidiki dalam penelitian ini. Parameter temperatur substrat, tekanan deposisi, daya RF, dan waktu deposisi dibuat konstan pada nilai 100 0C, 450 mTorr, 15 W dan 120 menit. Jenis fase, ketebalan, celah pita energi dan konduktivitas listrik lapisan a-C:H masing-masing dikarakterisasi dengan Difraksi Sinar – X (XRD), Scanning Electron Microscopy (SEM), spektroskopi UV-Vis dan probe 4-titik (Four-Point Probe). Hasil karakterisasi dengan XRD menunjukkan bahwa struktur lapisan a-C:H yang diperoleh berfase amorf. Peningkatan laju aliran metana dari 40 sampai 100 sccm dengan selang 20 sccm telah meningkatkan ketebalan lapisan tipis a-C:H pada nilai 641,5 - 1256 nm dengan laju deposisi 5,43 - 10,47 nm/menit serta peningkatan konduktivitas listrik lapisan pada rentang nilai 6,90x10-2 - 7,43x10-2 S/cm yang berakibat pada penurunan celah pita energi lapisan dari 2,55 eV menjadi 2,00 eV dengan meningkatnya laju aliran metana.

Raman scattering characterization of (100) and (111) oriented diamond films grown in the same run by hot filament chemical vapor deposition

1994 ◽  
Vol 9 (11) ◽  
pp. 2839-2844 ◽  
Author(s):  
G. Popovici ◽  
S. Khasawinah ◽  
T. Sung ◽  
M.A. Prelas ◽  
B.V. Spitsyn ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Deposition ◽  
Chemical Vapor ◽  
Infrared Excitation ◽  
Hot Filament

The crystalline quality of a diamond film with two different preferential orientations (100) and (111), obtained in the same run by hot filament chemical deposition, has been studied. The quality of the film determined by Raman spectroscopy measurements was found to be nearly the same for both orientations. The second order Raman spectrum for diamond film was observed by using an infrared excitation.

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