High Pressure and High Temperature Sintered PcBN Using Al, B4C and C as Sintering Additive

2016 ◽  
Vol 697 ◽  
pp. 521-525 ◽  
Author(s):  
Yao Ma ◽  
Jian Li ◽  
Hai Long Wang ◽  
Rui Zhang
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Strength ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polycrystalline Cubic Boron Nitride ◽  
Starting Mixture ◽  
Sintering Additive

Polycrystalline cubic boron nitride (PcBN) composites were sintered by high pressure and high temperature sintering (HPHT) at 1450 °C for 3 min under a pressure of 5.0 GPa. Aluminium,boron carbide and carbon in the starting mixture reacts with cubic boron nitride (cBN) to form Al3BC3 and AlN bonding among cBN grains during sintering. X-ray diffraction (XRD) and Scanning electron microscope (SEM) were used to analyze phases and micro-structure of the sintered samples. The dense structure of super hard cBN grains bonded together with Al3BC3 and AlN offers superior hardness and high strength. The Vickers hardness of PcBN composites was 45±5 GPa, and the strength of PcBN composites was 345±15 MPa.

Superhard Composite Containing Boron Nitride and Silicon Nitride

2012 ◽  
Vol 194 ◽  
pp. 199-203
Author(s):  
Ana Lúcia Diegues Skury ◽  
Shirlene Chagas ◽  
Sérgio Neves Monteiro
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Superhard Material ◽  
Cubic Boron Nitride ◽  
High Strength Steels ◽  
High Hardness ◽  
High Strength ◽  
Metallic Binder ◽  
Ferrous Alloys

As a superhard material, next to diamond, the cubic boron nitride (cBN) is of great interest owing to its efficiency in machining ferrous alloys. In nature, only the hexagonal, hBN, exists. In practice, high pressure and high temperature (HPHT) synthesis has to be used to produce small cBN crystals. For larger size machining inserts, the powder-like cBN crystals need to be sintered at specific HPHT conditions using a metallic binder. The present work investigates the sintering of cBN inserts using a Si3N4 binder agent. The results disclosed relatively high hardness for the inserts and revealed their effectiveness in machining high strength steels.

Synthesis and Decomposition of Ti3SiC2 under 1-5GPa at 1400°C

2014 ◽  
Vol 602-603 ◽  
pp. 499-502 ◽  
Author(s):  
Yuan Yuan Zhu ◽  
Shang Sheng Li ◽  
Liang Li ◽  
Ai Guo Zhou
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Pressure ◽  
Phase Transformation ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ternary Carbide ◽  
Scanning Electron

Ternary carbide Ti3SiC2 is a good binder to make superhard composites with diamonds or cubic boron nitride. Superhard composites are normally made at high temperature and under high pressure around 5 GPa to avoid the phase transformation of diamonds or cubic boron nitride. This paper researched the synthesis of Ti3SiC2 from the powders of Ti, Si, and graphite by a cubic presser under 1 GPa to 4 GPa at 1400°C. The decomposition of Ti3SiC2 under 5GPa at 1400°C was also researched. From X-ray diffraction (XRD) and scanning electron microscopy (SEM) results, Ti3SiC2 was synthesized in 30 min under 1 GPa at 1400°C. The impurities were TiSi2, Ti5Si3Cx, and TiC. As the pressure increased from 1GPa to 4GPa, less Ti3SiC2 more TiSi2 was synthesized. Therefore, high presser > 1GPa is unfavorable for the synthesis of Ti3SiC2. After treated under 5GPa at 1400°C, pure Ti3SiC2 was decomposed.

Sintering of Cubic Boron Nitride Using Titanium Based Binders

2012 ◽  
Vol 727-728 ◽  
pp. 446-449 ◽  
Author(s):  
Guerold Sergueevitch Bobrovinitchii ◽  
Ana Lúcia Diegues Skury ◽  
Sérgio Neves Monteiro ◽  
Marcia G. de Azevedo
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Superhard Material ◽  
Cubic Boron Nitride ◽  
High Strength Steels ◽  
High Hardness ◽  
High Strength ◽  
Metallic Binder ◽  
Ferrous Alloys

As a superhard material, next to diamond, the cubic boron nitride (cBN) is of great interest owing to its efficiency in machining ferrous alloys. In nature, only the hexagonal, hBN, exists. In practice, high pressure and high temperature (HPHT) synthesis has to be used to produce small cBN crystals. For larger size machining inserts, the powder-like cBN crystals need to be sintered at specific HPHT conditions using a metallic binder. The present work investigates the sintering of cBN inserts using a Ti-based binder at 7 GPa of pressure and 1800°C. The results disclosed relatively high hardness for the inserts and revealed their effectiveness in machining high strength steels.

scholarly journals High-pressure synthesis and crystal structure of the mixed-cation borate Ga4In4B15O33(OH)3

2019 ◽  
Vol 74 (4) ◽  
pp. 357-363
Author(s):  
Daniela Vitzthum ◽  
Hubert Huppertz
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
High Temperature ◽  
Diffraction Data ◽  
X Ray Diffraction ◽  
Synthesis And Crystal Structure ◽  
X Ray ◽  
Mixed Cation ◽  
High Pressure High Temperature ◽  
Pressure Synthesis

AbstractThe mixed cation triel borate Ga4In4B15O33(OH)3 was synthesized in a Walker-type multianvil apparatus at high-pressure/high-temperature conditions of 12.5 GPa and 1300°C. Although the product could not be reproduced in further experiments, its crystal structure could be reliably determined via single-crystal X-ray diffraction data. Ga4In4B15O33(OH)3 crystallizes in the tetragonal space group I41/a (origin choice 2) with the lattice parameters a = 11.382(2), c = 15.244(2) Å, and V = 1974.9(4) Å3. The structure of the quaternary triel borate consists of a complex network of BO4 tetrahedra, edge-sharing InO6 octahedra in dinuclear units, and very dense edge-sharing GaO6 octahedra in tetranuclear units.

scholarly journals High-pressure synthesis and characterization of the non-centrosymmetric scandium borate ScB6O9(OH)3

2020 ◽  
Vol 75 (6-7) ◽  
pp. 597-603
Author(s):  
Birgit Fuchs ◽  
Hubert Huppertz
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Pressure High Temperature ◽  
Structure Solution ◽  
Temperature Experiment ◽  
Pressure Synthesis

AbstractThe non-centrosymmetric scandium borate ScB6O9(OH)3 was obtained through a high-pressure/high-temperature experiment at 6 GPa and 1473 K. Single-crystal X-ray diffraction revealed that the structure is isotypic to InB6O9(OH)3 containing borate triple layers separated by scandium layers. The compound crystallizes in the space group Fdd2 with the lattice parameters a = 38.935(4), b = 4.4136(4), and c = 7.6342(6) Å. Powder X-ray diffraction and vibrational spectroscopy were used to further characterize the compound and verify the proposed structure solution.

The high-pressure cadmium borate Cd6B22O39·H2O

2015 ◽  
Vol 70 (3) ◽  
pp. 183-190 ◽  
Author(s):  
Gerhard Sohr ◽  
Nina Ciaghi ◽  
Klaus Wurst ◽  
Hubert Huppertz
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Pressure High Temperature ◽  
Cell Dimensions ◽  
Temperature Experiment ◽  
Unit Cell Dimensions ◽  
Ir And Raman

AbstractSingle crystals of the hydrous cadmium borate Cd6B22O39·H2O were obtained through a high-pressure/high-temperature experiment at 4.7 GPa and 1000 °C using a Walker-type multianvil apparatus. CdO and partially hydrolyzed B2O3 were used as starting materials. A single crystal X-ray diffraction study has revealed that the structure of Cd6B22O39·H2O is similar to that of the type M6B22O39·H2O (M=Fe, Co). Layers of corner-sharing BO4 groups are interconnected by BO3 groups to form channels containing the metal cations, which are six- and eight-fold coordinated by oxygen atoms. The compound crystallizes in the space group Pnma (no. 62) [R1=0.0379, wR2=0.0552 (all data)] with the unit cell dimensions a=1837.79(5), b=777.92(2), c=819.08(3) pm, and V=1171.00(6) Å3. The IR and Raman spectra reflect the structural characteristics of Cd6B22O39·H2O.

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

Sign in / Sign up

Export Citation Format

Share Document