Coating of Polyaniline Molecules on Cotton Fabric via Successive Ionic Layer Adsorption and Reaction (SILAR) Technique

2018 ◽  
Vol 775 ◽  
pp. 317-322
Author(s):  
John Raphael D. Barrios ◽  
Marvin U. Herrera
Keyword(s):  
Infrared Spectrum ◽  
Cotton Fabric ◽  
Surface Conductivity ◽  
Optimum Number ◽  
Layer By Layer ◽  
Layer Deposition ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Probe Measurements ◽  
Ionic Layer

Cotton fabric was coated with polyaniline molecules using Successive Ionic Layer Adsorption and Reaction (SILAR) technique. This method provides layer by layer deposition of polyaniline molecules. Infrared spectrum showed the vibrational peaks attributed with the presence of polyaniline molecules on the samples. Four-point probe measurements were done to obtain the surface conductivity of the samples. Upon increasing the dipping cycles, the conductivity of cotton fabric significantly increases. The optimum number of dipping cycle is found to be at 130. Beyond the optimum dipping cycle, the conductivity starts to decrease.

Polyaniline Emeraldine Salt Molecules Coated on Polyethylene Board Using SILAR Technique

2018 ◽  
Vol 775 ◽  
pp. 311-316 ◽  
Author(s):  
Gian Paul Joshua De Vera Arejola ◽  
Marvin U. Herrera
Keyword(s):  
Fourier Transform ◽  
Ftir Spectroscopy ◽  
Surface Conductivity ◽  
Circuit Boards ◽  
Emeraldine Salt ◽  
Probe Technique ◽  
Layer Adsorption ◽  
Conducting Polyaniline ◽  
Silar Technique ◽  
Ionic Layer

In this study, conducting polyaniline (PANI) Emeraldine salt molecules were coated on polyethylene (PE) board using successive ionic layer adsorption and reaction (SILAR) technique. The number of dipping cycles were varied and the surface conductivity of the samples were measured using four-point probe technique. Fourier Transform Infrared (FTIR) spectroscopy was also done to verify the identities of the coated samples. Results show that PANI Emeraldine salt was successfully coated on PE board as indicated by the peaks of FTIR spectra. Surface conductivity of the PANI Emeraldine salt coated PE board increases with increased number of dipping cycles due to increases interconnectivity of PANI molecules. The conductivity decreases after reaching an optimum point at 80 dipping cycles due to either hindrance of movement of charges or the breaking away of chunks of PANI molecules. These results opens up several applications such as memory devices and erasable circuit boards.

Growth of strongly orientated lead sulfide thin films by successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (2) ◽  
pp. 161-164 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

scholarly journals Ag8SnS6: a new IR solar absorber material with a near optimal bandgap

RSC Advances ◽  
2018 ◽  
Vol 8 (69) ◽  
pp. 39470-39476 ◽  
Author(s):  
Patsorn Boon-on ◽  
Belete Asefa Aragaw ◽  
Chun-Yen Lee ◽  
Jen-Bin Shi ◽  
Ming-Way Lee
Keyword(s):  
Photovoltaic Properties ◽  
Adsorption Reaction ◽  
Solar Absorber ◽  
Absorber Material ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

We report the synthesis and photovoltaic properties of a new ternary solar absorber – Ag8SnS6 nanocrystals prepared by successive ionic layer adsorption reaction (SILAR) technique.

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

CdS-PbS Multilayer Thin Films Grown by the SILAR Method

2004 ◽  
Vol 99-100 ◽  
pp. 243-246 ◽  
Author(s):  
S. Lindroos ◽  
J. Puišo ◽  
Sigitas Tamulevičius ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Normal Pressure ◽  
Multilayer Thin Films ◽  
Silar Method ◽  
Layer Structures ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (6) ◽  
pp. 983-986 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markka Leskelä
Keyword(s):  
Thin Films ◽  
Lead Selenide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer
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