The Influence of Processing Conditions on the Structure of Magnetron Sputtered Hydroxyapatite Thin Films

The growing demand for functionality of implants is necessary to cater for the growing elderly population in need of repair for damaged or diseased tissues and organs. Radiofrequency magnetron sputtered crystalline hydroxyapatite thin films with preferred crystal orientation on polished titanium substrates were produced without additional substrate heating. No hydroxyl absorption bands were detected in hydroxyapatite thin films even after the addition of water vapour during the sputtering process or hydrothermal post-treatment of the films.

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The Effect of Processing Conditions on Crystal Orientation and Structure in ZnS:Mn Thin Films

Journal of The Electrochemical Society ◽

10.1149/1.1838238 ◽

1998 ◽

Vol 145 (1) ◽

pp. 226-229 ◽

Cited By ~ 8

Author(s):

C. Chen ◽

S. Husurianto ◽

X. Lu ◽

M. D. Koretsky

Keyword(s):

Thin Films ◽

Crystal Orientation ◽

Processing Conditions

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Deposition and Characterization of Al2O3 and BiFeO3 Thin Films on Titanium Substrates for Tough MEMS Devices

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.137.46 ◽

2017 ◽

Vol 137 (1) ◽

pp. 46-47

Author(s):

Takeshi Kohno ◽

Masato Mihara ◽

Ataru Tanabe ◽

Takashi Abe ◽

Masanori Okuyama ◽

...

Keyword(s):

Thin Films ◽

Mems Devices ◽

Titanium Substrates

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Progressive Debonding of Multilayer Interconnect Structures

MRS Proceedings ◽

10.1557/proc-473-21 ◽

1997 ◽

Vol 473 ◽

Cited By ~ 9

Author(s):

Michael Lane ◽

Robert Ware ◽

Steven Voss ◽

Qing Ma ◽

Harry Fujimoto ◽

...

Keyword(s):

Thin Films ◽

Crack Growth ◽

Driving Force ◽

Adhesion Energy ◽

Time Dependent ◽

Multilayer Thin Films ◽

Processing Conditions ◽

Interface Morphology ◽

Entire Sample ◽

Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

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Detecting the 10 Angstroms That Change MEMS Performance

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0232 ◽

2004 ◽

Author(s):

Erika Schutte ◽

Jack Martin

Keyword(s):

Thin Films ◽

Device Performance ◽

Processing Conditions ◽

Packaging Process ◽

Mems Sensor ◽

Process Characterization ◽

Measurement Protocol ◽

Mems Device

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.

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Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽

10.3390/ma14040724 ◽

2021 ◽

Vol 14 (4) ◽

pp. 724

Author(s):

Tong Li ◽

Masaya Ichimura

Keyword(s):

Thin Films ◽

Aqueous Solution ◽

Optical Properties ◽

Surface Morphology ◽

Magnesium Hydroxide ◽

Dry Deposition ◽

Visible Range ◽

Substrate Heating ◽

Water Effects ◽

Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

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Hitherto Unidentified Absorption Bands of Water Vapour

Nature ◽

10.1038/152694a0 ◽

1943 ◽

Vol 152 (3867) ◽

pp. 694-694 ◽

Cited By ~ 3

Author(s):

T. G. COWLING

Keyword(s):

Water Vapour ◽

Absorption Bands

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Using TEM and XRD to probe crystal orientation in organic thin films grown with OMBD

Journal of Physics Conference Series ◽

10.1088/1742-6596/371/1/012042 ◽

2012 ◽

Vol 371 ◽

pp. 012042 ◽

Cited By ~ 2

Author(s):

J B Gilchrist ◽

S Heutz ◽

D W McComb

Keyword(s):

Thin Films ◽

Crystal Orientation ◽

Organic Thin Films

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Local Structure and Er3+ Emission from Pseudo-Amorphous GaN:Er Thin Films

MRS Proceedings ◽

10.1557/proc-536-81 ◽

1998 ◽

Vol 536 ◽

Author(s):

S. B. Aldabergenova ◽

M. Albrecht ◽

A. A. Andreev ◽

C. Inglefield ◽

J. Viner ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Amorphous Matrix ◽

Broad Band ◽

Resonant Absorption ◽

Absorption Bands ◽

Host Matrix ◽

Transmission Electron ◽

Infra Red ◽

Band Edge Luminescence

AbstractWe report on strong Er3+ luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er3+ luminescence at 1.535 μm corresponding to 4I13/2 → 4I15/2 transitions is greatly enhanced after annealing at 750°C. In this material GaN crystallites have formed and embedded in the continuous amorphous matrix. The crystallites are 4 to 7 nm in diameter as analyzed by high resolution transmission electron microscopy. The absorption edge, extending three orders of magnitude in absorption coefficient in the spectral range from 0.5 to 3.5 eV, is superimposed on resonant absorption bands of Er3+ ions.The total photoluminescence spectrum consists of welldefined Er3+ luminescence peaks imposed on a broad band edge luminescence from the amorphous GaN host matrix.

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