Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer

2020 ◽  
Vol 1004 ◽  
pp. 32-36
Author(s):  
Byung Kyu Jang ◽  
Jong Hwi Park ◽  
Jung Woo Choi ◽  
Eunsu Yang ◽  
Jung Gyu Kim ◽  
...  
Keyword(s):  
Growth Process ◽  
New Materials ◽  
Rocking Curve ◽  
X Ray ◽  
Maximum Value ◽  
Sic Wafer ◽  
Reducing Stress ◽  
Hot Zone ◽  
Better Than

The modified hot-zone design, consisting of a new design and new materials for the backside of SiC seed holder was adopted for reducing stress in grown SiC crystal ingot and for reducing the warpage of 6-inch SiC wafer. Crucible lid on the backside of SiC seed holder was designed to be movable during the growth process. Based on the warp value and mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals grown with new hot-zone design was observed to be better than conventional design.

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

2019 ◽  
Vol 963 ◽  
pp. 18-21 ◽  
Author(s):  
Jung Woo Choi ◽  
Jung Gyu Kim ◽  
Byung Kyu Jang ◽  
Sang Ki Ko ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Single Crystal ◽  
Large Diameter ◽  
Edge Region ◽  
Rocking Curve ◽  
X Ray ◽  
Maximum Value ◽  
Actual Growth ◽  
Reduced Temperature ◽  
Hot Zone

6-inch 4H-SiC single crystal was grown with modified hot-zone design for large diameter crystal. The simulation data confirmed reduced temperature gradient between center and edge region of growing front, and actual growth experiment exhibited that SiC crystal with good quality was obtained with modified hot-zone design without any quality degradation in edge region of bulk crystal. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals from middle and top region of grown ingot was observed to be almost identical. Furthermore, various properties of SiC crystal grown with modified hot-zone design have been systematically investigated.

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 187-190 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Y. Shishkin ◽  
Olof Kordina ◽  
I. Haselbarth ◽  
Stephen E. Saddow
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Structural Quality ◽  
Growth Time ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds.

X-Ray Rocking Curve Characterization of SiC Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 361-364
Author(s):  
Murugesu Yoganathan ◽  
Ping Wu ◽  
Ilya Zwieback
Keyword(s):  
Growth Process ◽  
Crystal Quality ◽  
Nondestructive Technique ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
X Ray ◽  
Typical Variation

X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown to be the major contribution to the measured broadening (FWHM). The feedback on lattice quality is used to optimize our SiC growth process. In the optimized growth runs, the typical variation in rocking curve sample angle Ω across the entire 3” diameter wafer is about 0.2 degrees. Possible mechanisms leading to changes in the lattice curvature are discussed.

Crystallinity of YBa2Cu3O7−x single crystals grown by the pulling method

1996 ◽  
Vol 11 (4) ◽  
pp. 804-812 ◽  
Author(s):  
Y. Namikawa ◽  
M. Egami ◽  
S. Koyama ◽  
Y. Shiohara ◽  
H. Kutami
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Growth Direction ◽  
Annealed Sample ◽  
Seed Crystal ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Crystal Seed ◽  
Better Than

Large YBa2Cu3O7−x (Y123) single crystals (larger than 13 mm cubed) have been grown along the c-axis reproducibly by the modified pulling method. The crystallinity of Y123 single crystal was investigated by x-ray diffraction and x-ray topography. Crystals grown from an MgO single crystal seed had some low angle subgrain boundaries which tilted 0.1–0.8° from each other. These grain boundaries originated from the seed crystal, and the subgrains were extended along the growth direction from the seed crystal. Y123 single crystals with no marked subgrains in the whole area were obtained by using Y123 single subgrain crystal seeds. FWHM of the x-ray rocking curve for the crystal so produced was about 0.14°, which was much better than the spectrum consisting of several separated peaks obtained from the previous crystals. Tc onset of the annealed sample was about 93.6 K, and the transition width was about 0.9 K. The low angle subgrain boundaries did not seem to be effective pinning centers for the magnetic flux.

High Quality Hydrothermal ZnO Crystals

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Suscavage ◽  
M. Harris ◽  
D. Bliss ◽  
P. Yip ◽  
S.-Q. Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Liquid Helium ◽  
Room Temperature ◽  
Surface Preparation ◽  
Critical Factor ◽  
High Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Oxide Crystals

AbstractZinc Oxide crystals have historically been grown in hydrothermal autoclaves with a basic mineralizer; however, doubts have been raised about the quality of such crystals because they have often exhibited large x-ray rocking curve widths and low photoluminescence (PL) yield with large linewidths. Several ZnO crystals were grown hydrothermally and sliced parallel to the c-plane. This resulted in opposite surfaces (the C+ and C-) exhibiting pronounced chemical and mechanical differences. Different surface treatments were investigated and compared by PL both at room temperature and liquid helium temperatures, and by double axis X-ray rocking curve measurements. The high quality of hydrothermally-grown ZnO is substantiated by the narrow rocking curve widths and sharp PL peaks obtained. A critical factor in obtaining these results was found to be surface preparation.

scholarly journals Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth

2002 ◽  
Vol 742 ◽  
Author(s):  
Philip G. Neudeck ◽  
David J. Spry ◽  
Andrew J. Trunek ◽  
J. Anthony ◽  
Glenn M. Beheim
Keyword(s):  
Screw Dislocation ◽  
Potassium Hydroxide ◽  
Growth Process ◽  
Crystal Quality ◽  
Etch Pits ◽  
Screw Dislocations ◽  
Homoepitaxial Growth ◽  
Sic Wafer

ABSTRACTThis paper reports initial demonstration of a cantilevered homoepitaxial growth process that places screw dislocations at predetermined lateral positions in on-axis 4H-SiC mesa epilayers. Thin cantilevers were grown extending toward the interior of hollow pre-growth mesa shapes etched into an on-axis 4H-SiC wafer, eventually completely coalescing to form roofed cavities. Each completely coalesced cavity exhibited either: 1) a screw dislocation growth spiral located exactly where final cantilever coalescence occurred, or 2) no growth spiral. The fact that growth spirals are not observed at any other position except the central coalescence point suggests that substrate screw dislocations, initially surrounded by the hollow portion of the pre-growth mesa shape, are relocated to the final coalescence point of the webbed epilayer roof. Molten potassium hydroxide etch studies revealed that properly grown webbed cantilevers exhibited no etch pits, confirming the superior crystal quality of the cantilevers.

scholarly journals An accurate parameterization for scattering factors, electron densities and electrostatic potentials for neutral atoms that obey all physical constraints

2014 ◽  
Vol 70 (6) ◽  
pp. 636-649 ◽  
Author(s):  
I. Lobato ◽  
D. Van Dyck
Keyword(s):  
Electron Scattering ◽  
Neutral Atoms ◽  
Efficient Procedure ◽  
X Ray ◽  
Physical Constraints ◽  
Order Of Magnitude ◽  
Scattering Factor ◽  
Relativistic Hydrogen ◽  
Better Than

An efficient procedure and computer program are outlined for fitting numerical X-ray and electron scattering factors with the correct inclusion of all physical constraints. The numerical electron scattering factors have been parameterized using five analytic non-relativistic hydrogen electron scattering factors as basis functions for 103 neutral atoms of the periodic table. The inclusion of the correct physical constraints in the electron scattering factor and its derived quantities allows the use of the new parameterization in different fields. In terms of quality of the fit, the proposed parameterization of the electron scattering factor is one order of magnitude better than the previous analytic fittings.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

2006 ◽  
Vol 955 ◽  
Author(s):  
Jinqiao Xie ◽  
Yi Fu ◽  
Hadis Morkoç
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates ◽  
Control Samples

ABSTRACTGaN layers on sapphire substrates were grown by metalorganic chemical vapor deposition using in situ porous SiNx nano-network. Crystalline quality of epilayers was characterized by X-ray rocking curve scans, and the full width at hall maximum values for (002) and (102) diffractions were improved from 252 arc sec and 405 arc sec, respectively, in control samples to 216 arc sec and 196 arc sec when SiNx was used. Ni/Au Schottky diodes (SDs) were fabricated and the SD performance was found to be critically dependent on the SiNx coverage (fewer and farther the pores the better the results) which is consistent with the trends of XRD and photoluminescence data. A 1.13eV barrier height was achieved when 5min SiNx layer was used compared with 0.78 eV without any SiNx nanonetwork. Furthermore, the breakdown voltage improved from 76 V to 250V when SiNx nanonetwork was used in otherwise identical structures.

Determination of domain structure and abundance of epitaxial Pb(Zr, Ti)O3 thin films grown on MgO(001) by rf magnetron sputtering

1999 ◽  
Vol 14 (1) ◽  
pp. 132-141 ◽  
Author(s):  
Kyeong Seok Lee ◽  
Young Min Kang ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Magnetron Sputtering ◽  
Curve Analysis ◽  
Crystalline Quality ◽  
Rocking Curve ◽  
X Ray

Epitaxial Pb(ZrxTi1−x)O3 (x = 0.0−0.32) ferroelectric thin films of 500 nm thickness were grown on MgO(001) single crystal substrates by in situ rf magnetron sputtering, and evolution of their domain structures is characterized by employing various x-ray diffraction techniques. X-ray θ-2θ scan showed the films were grown highly c-axis oriented with a tetragonal perovskite structure. 90° domain configuration was investigated using the x-ray rocking curve analysis for PZT 100 peaks in two different Φphi; angles. The rocking curve analysis showed that the degree of c-axis orientation and the crystalline quality of the films were improved continuously with increasing Zr concentration. The c-domain abundance as a function of Zr concentration was quantified using the x-ray rocking curves of PZT 001 and 100, taking account of structural factors and Lorentz-polarization factors. High temperature x-ray technique was also employed to quantify the domain structure as a function of temperature during cooling after reheating the samples to 650 °C. During the cooling process, c-domain abundance was found to increase continuously while the crystalline quality of the films was deteriorated below the Curie temperature. The results led us to conclude that the transformation strain of the film at and below the Curie temperature plays a significant role in the final domain structure and abundance of epitaxial PZT thin films.

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