Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

2020 ◽  
Vol 1004 ◽  
pp. 939-944
Author(s):  
Xiang Zhou ◽  
Collin W. Hitchcock ◽  
Reza Ghandi ◽  
Alexander Bolotnikov ◽  
T. Paul Chow
Keyword(s):  
Design Parameters ◽  
Device Design ◽  
Dynamic Switching ◽  
Switching Characteristics

We have performed detailed dynamic switching measurements for 3kV 4H-SiC Charge-Balanced (CB) junction barrier Schottky (JBS) diodes [1,2] and studied their dependence on device design parameters. We have done forward and reverse recovery characterizations and found unusual switching characteristics in these CB-JBS diodes. These switching characteristics are explained based on the design and layout of the devices.

Model of a Slip Sensor

1993 ◽  
Vol 207 (1) ◽  
pp. 55-64 ◽  
Author(s):  
F Eghtedari ◽  
S H Hopkins ◽  
D T Pham
Keyword(s):  
Solid State ◽  
Computer Modelling ◽  
Design Parameters ◽  
Slip Sensor ◽  
Fringe Patterns ◽  
Switching Characteristics ◽  
Main Components ◽  
Photoelastic Sensor ◽  
Slip Detection

This paper describes the mathematical and computer modelling of a photoelastic sensor for slip detection. The main components of the sensor are a photoelastic transducer and a solid state camera. When under stress, the photoelastic transducer generates optical fringe patterns which are captured digitally by the camera. The model developed encompasses the mechanical and optical behaviours of the photoelastic transducer and the switching characteristics of the camera pixels. The model has been employed to study the effects of different design parameters on the sensor's slip resolution.

Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics

2019 ◽  
Vol 91 ◽  
pp. 146-150 ◽  
Author(s):  
E. Bahat Treidel ◽  
O. Hilt ◽  
M. Wolf ◽  
L. Schellhase ◽  
A. Thies ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Temperature Dependent ◽  
Dynamic Switching ◽  
Switching Characteristics

Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels

2013 ◽  
Vol 534 ◽  
pp. 131-135
Author(s):  
You Yin ◽  
Rosalena Irma Alip ◽  
Yu Long Zhang ◽  
Ryota Kobayashi ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Active Medium ◽  
Low Cost ◽  
Single Layer ◽  
Dynamic Switching ◽  
Non Volatile Memory ◽  
Controlled Crystallization ◽  
Multi Level ◽  
Switching Characteristics ◽  
20 Nm

Here, we report multi-level storage (MLS) in multi-layer (ML) and single-layer (SL) phase change memories (PCM). For the former ML-PCM device, the active medium with two layers of chalcogenide consists of a top 30 nm TiN/180 nm SbTeN/20 nm TiN/bottom 120 nm SbTeN stacked multi-layer. Three stable and distinct resistance states are demonstrated in both static and dynamic switching characteristics of the multi-layer devices. For the latter SL-PCM device, the active medium with only one layer of chalcogenide consists of a top 50 nm TiN/150 nm SbTeN. We demonstrate that the number of distinguishable resistance levels can readily reach 16 and even higher. These levels in this study result from the initial threshold switching and the subsequent current-controlled crystallization induced by Joule heating. Therefore, the latter memory allows the creation of many distinct levels, thus enabling the low-cost ultra-high-density non-volatile memory.

DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers

2019 ◽  
Author(s):  
Jiancheng Yang ◽  
Patrick Carey, IV ◽  
Fan Ren ◽  
Yen-Ting Chen ◽  
Yu-Ye Liao ◽  
...  
Keyword(s):  
Dynamic Switching ◽  
Switching Characteristics

Impact of device design parameters on VDSAT and analog performance of TFETs

2017 ◽  
Author(s):  
Abhishek Acharya ◽  
Sudeb Dasgupta ◽  
Bulusu Anand
Keyword(s):  
Design Parameters ◽  
Device Design ◽  
Analog Performance

scholarly journals Switching characteristics of a 2-way-cartridge valve. (1st report. Effects of main valve design parameters).

1990 ◽  
Vol 21 (3) ◽  
pp. 296-302
Author(s):  
Shigeru IKEO ◽  
Kazumi ITO ◽  
Koji TAKAHASHI ◽  
Ryuji MIURA ◽  
Kunio KANDA
Keyword(s):  
Design Parameters ◽  
Valve Design ◽  
Switching Characteristics

scholarly journals Investigation of Variation in Device Design Parameters on the Saturation Voltages of Hetero-junction Nanowire Tunnel FETs

2021 ◽  
Author(s):  
Abhishek Acharya
Keyword(s):  
Channel Length ◽  
Design Parameters ◽  
Device Design ◽  
Short Channel ◽  
Nanowire Diameter ◽  
Saturation State ◽  
Design And Optimization ◽  
Optimization Parameters ◽  
Tunnel Fets ◽  
The Impact

Abstract Estimation of the saturation voltages of beyond CMOS devices is essential for the accurate circuit design and analysis. In this work, we look at the influence of device design parameters on the saturation voltage (VDSAT) of a Tunnel Field Effect Transistor (TFET) using 3D TCAD Numerical Simulations. The variation in channel length, underlap at gate-drain, source/drain doping, and the source/channel material are some of the vital optimization parameters in the design and optimization of TFET based circuits. We observe, with the increasing value of drain bias (VDS), TFET device initially enters in the soft saturation state and subsequently a deep saturation state is attained. These voltages are altered with device variability and hence the analog performance. An increase in drain (source) doping increases (decreases) the soft saturation voltage of TFETs. It is also found that an early onset of saturation can be achieved by the gate-drain underlap in TFETs. The impact of short channel lengths is to worsen the perfect saturation phenomenon in Tunnel FETs. In addition, the reduction in nanowire diameter delays the saturation by few milivolts.

Design and Fabrication of a Functionally Modified Bimorph Actuator

2014 ◽  
Author(s):  
Johnson Fujamade ◽  
Frances Williams ◽  
Oliver Myers ◽  
Brandon Plastied ◽  
Messaoud Bahoura ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Lead Zirconate ◽  
Linear Displacement ◽  
Design Parameters ◽  
Platinum Electrodes ◽  
Mems Devices ◽  
Device Design ◽  
High Performing ◽  
Mems Technology

In recent years, the use of microelectromechanical systems (MEMS) devices has led to high performing actuators for various applications, including unmanned air vehicles (UAVs) for defense applications. The incorporation of MEMS technology in this field has resulted in miniaturized UAVs with the capability of carrying out sophisticated reconnaissance and relaying real time information remotely; however, maneuverability of these devices around obstacles is still a challenge. This paper presents the design and fabrication of a functionally modified bimorph actuator with enhanced UAV aerodynamics and maneuverability. The actuator is a metal-based MEMS device consisting of stainless steel, lead zirconate titanate (PZT), and titanium/platinum electrodes. COMSOL analysis was performed to examine optimal device design parameters and is presented in this paper. The design consists of off-axis PZT segments on a bimorph PZT layer which results in bend twist coupling. A detailed description of the fabrication process flow developed based on the optimization of the device design is also given. MEMS processing technology was incorporated to produce a torsional cantilever beam that produces angular and linear displacement for superior UAV maneuverability and its performance is also presented in this paper.

Band discontinuities as heterojunction device design parameters

1986 ◽  
Vol 33 (5) ◽  
pp. 616-619 ◽  
Author(s):  
H. Unlu ◽  
A. Nussbaum
Keyword(s):  
Design Parameters ◽  
Device Design ◽  
Heterojunction Device
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