Impact of device design parameters on VDSAT and analog performance of TFETs

2017 ◽  
Author(s):  
Abhishek Acharya ◽  
Sudeb Dasgupta ◽  
Bulusu Anand
Keyword(s):  
Design Parameters ◽  
Device Design ◽  
Analog Performance

Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

2020 ◽  
Vol 1004 ◽  
pp. 939-944
Author(s):  
Xiang Zhou ◽  
Collin W. Hitchcock ◽  
Reza Ghandi ◽  
Alexander Bolotnikov ◽  
T. Paul Chow
Keyword(s):  
Design Parameters ◽  
Device Design ◽  
Dynamic Switching ◽  
Switching Characteristics

We have performed detailed dynamic switching measurements for 3kV 4H-SiC Charge-Balanced (CB) junction barrier Schottky (JBS) diodes [1,2] and studied their dependence on device design parameters. We have done forward and reverse recovery characterizations and found unusual switching characteristics in these CB-JBS diodes. These switching characteristics are explained based on the design and layout of the devices.

scholarly journals Investigation of Variation in Device Design Parameters on the Saturation Voltages of Hetero-junction Nanowire Tunnel FETs

2021 ◽  
Author(s):  
Abhishek Acharya
Keyword(s):  
Channel Length ◽  
Design Parameters ◽  
Device Design ◽  
Short Channel ◽  
Nanowire Diameter ◽  
Saturation State ◽  
Design And Optimization ◽  
Optimization Parameters ◽  
Tunnel Fets ◽  
The Impact

Abstract Estimation of the saturation voltages of beyond CMOS devices is essential for the accurate circuit design and analysis. In this work, we look at the influence of device design parameters on the saturation voltage (VDSAT) of a Tunnel Field Effect Transistor (TFET) using 3D TCAD Numerical Simulations. The variation in channel length, underlap at gate-drain, source/drain doping, and the source/channel material are some of the vital optimization parameters in the design and optimization of TFET based circuits. We observe, with the increasing value of drain bias (VDS), TFET device initially enters in the soft saturation state and subsequently a deep saturation state is attained. These voltages are altered with device variability and hence the analog performance. An increase in drain (source) doping increases (decreases) the soft saturation voltage of TFETs. It is also found that an early onset of saturation can be achieved by the gate-drain underlap in TFETs. The impact of short channel lengths is to worsen the perfect saturation phenomenon in Tunnel FETs. In addition, the reduction in nanowire diameter delays the saturation by few milivolts.

Design and Fabrication of a Functionally Modified Bimorph Actuator

2014 ◽  
Author(s):  
Johnson Fujamade ◽  
Frances Williams ◽  
Oliver Myers ◽  
Brandon Plastied ◽  
Messaoud Bahoura ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Lead Zirconate ◽  
Linear Displacement ◽  
Design Parameters ◽  
Platinum Electrodes ◽  
Mems Devices ◽  
Device Design ◽  
High Performing ◽  
Mems Technology

In recent years, the use of microelectromechanical systems (MEMS) devices has led to high performing actuators for various applications, including unmanned air vehicles (UAVs) for defense applications. The incorporation of MEMS technology in this field has resulted in miniaturized UAVs with the capability of carrying out sophisticated reconnaissance and relaying real time information remotely; however, maneuverability of these devices around obstacles is still a challenge. This paper presents the design and fabrication of a functionally modified bimorph actuator with enhanced UAV aerodynamics and maneuverability. The actuator is a metal-based MEMS device consisting of stainless steel, lead zirconate titanate (PZT), and titanium/platinum electrodes. COMSOL analysis was performed to examine optimal device design parameters and is presented in this paper. The design consists of off-axis PZT segments on a bimorph PZT layer which results in bend twist coupling. A detailed description of the fabrication process flow developed based on the optimization of the device design is also given. MEMS processing technology was incorporated to produce a torsional cantilever beam that produces angular and linear displacement for superior UAV maneuverability and its performance is also presented in this paper.

scholarly journals RF-heating system of helicon-type for PLM-2 plasma device: design parameters

2020 ◽  
Vol 1683 ◽  
pp. 032013
Author(s):  
Tran Quang V ◽  
V A Iachuk ◽  
V P Budaev ◽  
S D Fedorovich
Keyword(s):  
Heating System ◽  
Design Parameters ◽  
Rf Heating ◽  
Device Design ◽  
Plasma Device

Theoretical analysis of HEMT breakdown dependence on device design parameters

1991 ◽  
Vol 38 (2) ◽  
pp. 213-221 ◽  
Author(s):  
H.-F. Chau ◽  
D. Pavlidis ◽  
K. Tomizawa
Keyword(s):  
Theoretical Analysis ◽  
Design Parameters ◽  
Device Design

The influence of confocal microscope design on imaging performance

1993 ◽  
Vol 51 ◽  
pp. 144-145
Author(s):  
C J R Sheppard
Keyword(s):  
Image Quality ◽  
Fluorescence Imaging ◽  
Confocal Microscope ◽  
Industrial Applications ◽  
Three Dimensions ◽  
Design Parameters ◽  
Weak Signals ◽  
Size And Shape ◽  
Imaging Performance ◽  
Fundamental Limitation

The confocal microscope is now widely used in both biomedical and industrial applications for imaging, in three dimensions, objects with appreciable depth. There are now a range of different microscopes on the market, which have adopted a variety of different designs. The aim of this paper is to explore the effects on imaging performance of design parameters including the method of scanning, the type of detector, and the size and shape of the confocal aperture.It is becoming apparent that there is no such thing as an ideal confocal microscope: all systems have limitations and the best compromise depends on what the microscope is used for and how it is used. The most important compromise at present is between image quality and speed of scanning, which is particularly apparent when imaging with very weak signals. If great speed is not of importance, then the fundamental limitation for fluorescence imaging is the detection of sufficient numbers of photons before the fluorochrome bleaches.

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