Tailoring of Optical and Physical Properties of ZnO Films by Co-Doping Concentration

2020 ◽  
Vol 1010 ◽  
pp. 346-351
Author(s):  
Ainun Rahmahwati Ainuddin ◽  
Siti Sarah Mohd Ismail ◽  
N.A. Yusuf

The modification and tailoring characteristic of nanostructured materials are of great interest due to controllable and unusual inherent properties in such materials. Cobalt-doped zinc oxide (Co:ZnO) thin films were prepared using the sol-gel technique with the spin coating method. The optical and physical properties of Co:ZnO films were tailored by the adjustment of Co concentration, which was realised by varying the ratio. The morphology and structure properties were characterised, and the effects of Co doping and post-annealing were investigated. Similar with undoped ZnO, the synthesised Co:ZnO films have a hexagonal wurtzite structure with the crystallinity deteriorated, and present high visible transparency with the absorption edge redshifted. Debye–Scherrer analysis of XRD pattern reveals an increase of the crystallite size with doping concentration. The bandgap, calculated using a Tauc Plot method, reveals a decrease in the absorption onset with an increase in the doping level.

2016 ◽  
Vol 675-676 ◽  
pp. 241-244 ◽  
Author(s):  
Tanattha Rattana ◽  
Sumetha Suwanboon ◽  
Chittra Kedkaew

Ni-doped ZnO thin films were prepared on glass slide substrates by a sol-gel dip coating method with different Ni doping concentrations (0-33 mol%). The effect of Ni doping concentration on structural, surface morphology and optical properties of the thin films was characterized by XRD, FESEM and UV-Vis spectrophotometer. The XRD results indicated that pure ZnO thin film exhibited a hexagonal wurtzite structure. Ni (OH)2 phase were observed at a high Ni doping concentration. The FESEM images showed that the surface morphology and surface roughness were sensitive to the Ni doping concentration. The optical transmission measurements were observed that the transmittance decreased with increasing the Ni doping concentration.


2018 ◽  
Vol 280 ◽  
pp. 43-49
Author(s):  
Zi Neng Ng ◽  
Kah Yoong Chan

Zinc oxide (ZnO) has gained worldwide attention due to its direct wide band gap and large exciton binding energy, which are important properties in the application of emerging optoelectronic devices. By doping ZnO with donor elements, a combination of good n-type conductivity and good transparency in the visible and near UV range can be achieved. Co-doping ZnO with several types of dopants is also beneficial in improving the electronic properties of ZnO films. To the best of our knowledge, the fundamental properties of gallium-tin (Ga-Sn) co-doped ZnO (GSZO) films were rarely explored. In this work, we attempt to coat GSZO films on glass substrates via sol-gel spin-coating method. The Ga-Sn co-doping ratio was fixed at 1:1 and the concentration of the dopants was varied at 0.5, 1.0, 1.5, and 2 at.% with respect to the precursor. The AFM image show granular features on the morphology of all GSZO films. All samples also exhibit a preferential c-axis orientation as detected by XRD. The XRD indicates higher crystal quality and larger crystallite size on GSZO thin films at 2.0 at.% and agrees well with the AFM results. However, the transparency and optical band-gap of the GSZO thin films degrade with higher co-doping concentration. The best electrical properties were achieved at co-doping concentration of 1 at.% with conductivity and carrier density of 7.50 × 10-2S/cm and 1.37 × 1016cm-3, respectively. At 1.0 at.% co-doping concentration, optimal optical transmittance and electrical properties were achieved, making it promising in the application of optoelectronics.


2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Guomei Tang ◽  
Hua Liu ◽  
Wei Zhang

ZnO:In films with different concentrations (0–5 at.%) are successfully synthesized on quartz substrates using sol-gel technique. The structure, morphology, and optical properties of ZnO:In films are investigated by X-ray diffraction, atomic force microscopy, and UV-visible spectrophotometer. It is found that all the films with columnar structural morphology grow along the preferred [001] orientation and the incorporation of indium can improve the crystallinity of ZnO films. The transmittance of the films is about 80% in the visible range. A change of the optical absorption edge from blue shift to red shift is observed for ZnO:In films as the doping concentration increases, which means that the optical band gap first increases and then decreases. The blue shift is due to the Burstein-Moss effect. The sharp jump of the absorption edge from blue-shift to red shift is ascribe to the band gap narrowing caused by the merging of the donor and conduction bands of ZnO:In at high doping concentration.


Author(s):  
F Ayadi ◽  
F Saadaoui ◽  
W Cheikhrouhou-Koubaa ◽  
M Koubaa ◽  
A Cheikhrouhou ◽  
...  

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.


2021 ◽  
Vol 16 (6) ◽  
pp. 967-973
Author(s):  
Shuai Zhao ◽  
Dong-Xue Lin ◽  
Yu-Xin Wang

All of the TiO2 films including intrinsic TiO2 film, Zn single doped film with 2.0 at% content and N doped films with 4.0 at%, 6.0 at%, 8.0 at% and 10.0 at% content, were obtained by butyl titanate (Ti(OC4H9)4) as a titanium source, zinc nitrate (Zn(NO3)2·6H2O) as zinc source and urea (H2 NCONH2) as nitrogen source, which was calcined at 600 °C on the glass substrate and Si substrate using sol–gel spin coating method. The structures, morphology and optical properties of various films were analyzed and studied by X ray diffract meter (XRD), ultraviolet-visible spectrophotometer (UV-Vis) and scanning electron microscope (SEM). The results indicated that the main crystal plane of TiO2 film was (101) and any impurity crystal plane didn't appear. All samples had obvious red shifts in the absorbing edge overall and reduced significantly the width of forbidden band, especially, the N doping content with 8.0 at% was surprised to investigate the strongest (101) peak intensity, the sharpest peak type, the best meritocratic orientation, the greatest red shift of the absorption spectrum, the lowest optical band gap value of 3.356 eV, and the highest utilization rate of visible light of the sample. However, the surface morphology of the others films except the N doping content with 8.0 at% is not further improved by co-doping, that is, their surfaces were still rough, had obvious voids and uneven distribution between the grains. Meanwhile, the intensity of the (101) crystalline diffraction peaks of these samples were reduced and the crystalline spacing generally increased after co-doping.


2019 ◽  
Vol 97 (3) ◽  
pp. 227-232 ◽  
Author(s):  
Ye Zhao ◽  
Fan Tong ◽  
Mao Hua Wang

Pure and cobalt-doped ZnO nanoparticles (2.5, 5, 7.5, and 10 atom % Co) are synthesized by sol–gel method. The as-synthesized nanoparticles are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and field emission scanning electron microscopy (FE-SEM) analysis. The nanoparticles of 0, 2.5, and 5 atom % Co-doped ZnO exhibited hexagonal wurtzite structure and have no other phases. Moreover, the (101) diffraction peaks position of Co-doped ZnO shift toward a smaller value of diffraction angle compared with pure ZnO powders. The results confirm that Co ions were well incorporated into ZnO crystal lattice. Simultaneously, Co doping also inhibited the growth of particles, and the crystallite size decreased from 43.11 nm to 36.63 nm with the increase in doping concentration from 0 to 10 atom %. The values of the optical band gap of all Co-doped ZnO nanoparticles gradually decreased from 3.09 eV to 2.66 eV with increasing Co content. Particular, the dielectric constant of all Co-doped ZnO ceramics gradually increased from 1.62 × 103 to 20.52 × 103, and the dielectric loss decreased from 2.36 to 1.28 when Co content increased from 0 to 10 atom %.


2018 ◽  
Vol 30 (2) ◽  
pp. 78
Author(s):  
Muhammad Lukman Nur Hakim ◽  
Yanwar Faza ◽  
Zulia Hasratiningsih ◽  
Nina Djustiana ◽  
Bambang Sunendar

Introduction: Several factor limits of services of dental composite have triggered further improvement. ZrO2-Al2O3-SiO2 system as filler of dental composite had been developed with sol-gel technique. Ultrasonic homogeniser were reported to change the particle size ditribution or shape. Unifom size and distribution of particle is believed to help define the behavior of hardness properties. Methods: The study was an laboratory experimental design. Filler ZrO2-Al2O3-SiO2 system were developed via sol-gel methods. Post calcination process, filler were immerse in ethanol and applied with ultrasonic homogeniser, with various amplitude i.e 50 rpm, 60 rpm and 80 rpm then named sample A, B, and C. XRD, SEM anda PSA were used to characterize of filler system. Subsequent filler were used to fabricate dental composite then evaluate the hardness value using micro-hardness tester. One–way ANOVA was used to analysis the statistical result of hardness value. Results: XRD pattern of three sample were similar in which tetragonal zirconia was prominent (57-61 %) followed by monoclinic zirconia (24-25%) and amorphous (15-17 %). While, SEM and PSA characterization showed amplitude 50 rpm (sample A) produce more uniform size and well-distributed particle filler than the others. In contrary, sample B and C showed higher peak in PSA results. It means there was dominating of filler with particular size.  However, the hardness value did not show significant differences between those filler (p>0,05). Conclusion: Dental composite that contain of different uniformity and distribution of filler ZrO2-Al2O3-SiO2 system has no significantly differences of hardness value.


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