High Temperature X-Ray Diffraction Studies of the Phase Formation Process of Iridium Silicide Thin Films

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

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Phase formation process of sputtered NiCr(37:63) thin films

Fresenius Journal of Analytical Chemistry ◽

10.1007/s002160050965 ◽

1998 ◽

Vol 361 (6-7) ◽

pp. 608-609 ◽

Cited By ~ 6

Author(s):

W. Pitschke ◽

W. Brückner

Keyword(s):

Thin Films ◽

Phase Formation ◽

Formation Process ◽

Phase Formation Process

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Phase formation process of IrxSi1−x thin films Structure and electrical properties

Thin Solid Films ◽

10.1016/s0040-6090(97)00326-x ◽

1997 ◽

Vol 310 (1-2) ◽

pp. 8-18 ◽

Cited By ~ 13

Author(s):

R. Kurt ◽

W. Pitschke ◽

A. Heinrich ◽

J. Schumann ◽

J. Thomas ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Phase Formation ◽

Formation Process ◽

Phase Formation Process

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Scanning X-Ray Diffraction: A Technique With High Compositional Resolution for Studying Phase Formation in Co-Deposited Thin Films

MRS Proceedings ◽

10.1557/proc-343-271 ◽

1994 ◽

Vol 343 ◽

Author(s):

T.I. Selinder ◽

D.J. Miller ◽

K.E. Gray ◽

M.A. Beno ◽

G.S. Knapp

Keyword(s):

Thin Films ◽

Phase Formation ◽

Structural Information ◽

Metastable Phase ◽

Ternary Systems ◽

Composition Gradient ◽

X Ray Diffraction ◽

X Ray ◽

Analysis Technique ◽

Position Sensitive

ABSTRACTInvestigation of the formation of new metastable phases in alloy thin films requires ways of quickly determining the crystalline structure of samples with different compositions. We report a novel technique for acquiring structural information from films intentionally grown with a composition gradient. For example, binary metal alloy films were deposited using a phase-spread sputtering method. In this way essentially the entire composition range could be grown in a single deposition. By using a narrow incident x-ray beam and a translating sample stage combined with a position sensitive x-ray detector technique, detailed information of the metastable phase diagram can be obtained rapidly. Compositional resolution of the order of ±0.2% can be achieved, and is limited by the brightness of the x-ray source. Initial results from studies of phase formation in Zr-Ta alloys will be presented. Extensions of the analysis technique to ternary systems will be discussed.

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High temperature x-ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

Crystal Research and Technology ◽

10.1002/crat.201100229 ◽

2011 ◽

Vol 47 (4) ◽

pp. 415-422 ◽

Cited By ~ 4

Author(s):

G. Balakrishnan ◽

P. Kuppusami ◽

S. Murugesan ◽

E. Mohandas ◽

D. Sastikumar

Keyword(s):

Thin Films ◽

High Temperature ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray

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Enhancement of Aurivillius Phase Formation Kinetics in SBT Thin Films using Nanoparticle Seeding

MRS Proceedings ◽

10.1557/proc-784-c11.55 ◽

2003 ◽

Vol 784 ◽

Author(s):

Yun-Mo Sung ◽

Woo-Chul Kwak ◽

Se-Yon Jung ◽

Seung-Joon Hwang

Keyword(s):

Thin Films ◽

Activation Energy ◽

Phase Transformation ◽

Phase Formation ◽

X Ray Diffraction ◽

Aurivillius Phase ◽

X Ray ◽

Si Substrates ◽

Formation Kinetics ◽

Kinetics Of

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.

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