X-ray diffraction studies elucidating high temperature superconducting properties of YBa2Cu3O7−x thin films

1994 ◽  
Vol 209 (4) ◽  
Author(s):  
M. Schieber ◽  
Y. Ariel ◽  
A. Raizman ◽  
S. Rotter
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Quantitative Evaluation ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature Superconducting

AbstractA quantitative evaluation of the influence of the amount of the crystallographically unoriented grains of YBa

Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Diffusion ◽  
Annealing Time ◽  
Crystal Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Time

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

High temperature x-ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

2011 ◽  
Vol 47 (4) ◽  
pp. 415-422 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
E. Mohandas ◽  
D. Sastikumar
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

HIGH QUALITY SmBa2Cu3O7-X THIN FILMS FOR MICROWAVE APPLICATIONS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 768-772 ◽  
Author(s):  
M. A. BOFFA ◽  
F. BOBBA ◽  
A. M. CUCOLO ◽  
R. MONACO
Keyword(s):  
Thin Films ◽  
Microwave Measurements ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Oxygen Pressure ◽  
Afm Analysis ◽  
Microstrip Resonators ◽  
Microwave Applications ◽  
Critical Current Density Jc

In this paper we report on the analysis of the surface properties of c-axis oriented, highly epitaxial SmBa 2 Cu 3 O 7-X thin films grown by high oxygen pressure d.c. sputtering technique on (100)k LaAlO 3 substrates. Structural and morphological characterizations of the samples were carried out by means of X-Ray diffraction and AFM analysis. The AFM images show a surface morphology with characteristic screw dislocations with roughness of 2-3 nm on 1 μ m 2 area. The superconducting properties indicate a critical temperature Tc(R=0)>90K and a critical current density Jc>1*106A/cm 2 at T=77K. Preliminary microwave measurements on meanderline microstrip resonators show surface residual resistances Rs<13μΩ a 1 GHz at T=4.2K .

In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction

2001 ◽  
Vol 41 (7) ◽  
pp. 995-998 ◽  
Author(s):  
C. Zhao ◽  
G. Roebben ◽  
H. Bender ◽  
E. Young ◽  
S. Haukka ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
X Ray Diffraction ◽  
X Ray

Defects in YBa2Cu3O7−δ Thin Films and Their Influences on Tc

1995 ◽  
Vol 401 ◽  
Author(s):  
Jinhua Ye ◽  
Keikichi Nakamura
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Oxygen Deficiency ◽  
Diffraction Method ◽  
Cation Ordering ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallographic Defects ◽  
Kinetics Of

AbstractCrystallographic defects introduced in the YBa2Cu3O7−δ thin films during depositions were studied using X-ray diffraction method, and their influences on superconducting properties were also investigated by examining Tc variation of the as-grown and post-annealed thin films. It was found that there exist several kinds of defects in the as-grown thin films, such as oxygen deficiency, cation disordering, and others like lattice dislocation, stacking faults, etc.. These defects could be relaxed by heat treatment at temperatures ranging from 400 to 900 °C, resulting in Tc enhancement more or less. Quantitative understandings of the relations among annealing temperature, structural relaxation, and Tc improvement has also been reached. The kinetics of the relaxation of the defects in the YBCO films was studied further using a high-temperature X-ray diffractometer. Interesting phenomena have been observed at around 400 °C due to abnormal desorption behavior of oxygen and at higher temperatures relating to cation ordering.

Formation of the high temperature phase in vacuum deposited SnSe thin films

1986 ◽  
Vol 175 (1-2) ◽  
Author(s):  
T. Subba Rao ◽  
B. K. Samantaray ◽  
A. K. Chaudhuri
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Substrate Temperatures ◽  
Low Temperature Phase

AbstractThin films of SnSe vacuum deposited on glass substrates kept at different temperatures have been studied by X-ray diffraction. It is observed that the high temperature phase of SnSe, usually found above 807 K is frozen in along with the low temperature phase when deposited at substrate temperatures of 473 K and above.

Deposition of Superconducting Thin Films of Magnesium Di-Boride on Various Substrates by Electroless Plating Process

2010 ◽  
Vol 654-656 ◽  
pp. 1840-1843
Author(s):  
Susil K. Putatunda ◽  
Khurpa S. Vijayaragavan ◽  
Gavin Lawes
Keyword(s):  
Thin Films ◽  
Electroless Plating ◽  
Magnesium Diboride ◽  
Superconducting Thin Films ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Gold Silver

Superconducting thin films of magnesium diboride (MgB2) has been synthesized on various substrates such as gold, silver, copper and silicon using a novel electroless plating technique. The microstructures and the superconducting properties of these films have been characterized using X-ray diffraction, scanning electron microscopy and temperature dependent magnetometry. X-ray diffraction measurements confirm that the films are crystalline magnesium diboride with some impurity phases. Clear evidence for a superconducting transition in the magnetization measurements was observed.

Improvement of Thermal Stability of ZrB2/Si3N4 Coatings as High-Temperature Solar Selective Absorbers

2014 ◽  
Vol 521 ◽  
pp. 581-585
Author(s):  
Yao Ming Sun ◽  
Xiu Di Xiao ◽  
Guan Qi Chai ◽  
Gang Xu ◽  
Bin Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Substrate Temperature ◽  
Bias Voltage ◽  
X Ray Diffraction ◽  
Substrate Bias Voltage ◽  
X Ray ◽  
Deposition Parameters ◽  
Thermal Stability Of

ZrB2 thin films were prepared by DC magnetron sputtering technique. The microstructure, thermal stability and optical properties of thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometer. The compactness of ZrB2 thin films was studied to improve the thermal stability by optimizing the deposition parameters. The compactness and thermal stability of the coatings were improved with the increase of substrate temperature. However, these properties of the coatings were enhanced firstly and then weakened with the increase of substrate bias voltage. The selectivity of sample deposited at high substrate temperature and suitable bias voltage degraded slightly after annealing at 500 °C/100 h in air. This provided a new way to improve the thermal stability of high-temperature solar selective absorber.

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