Effect of UV Illumination on Deposition of Low-k Si-O-C(-H) Films by PECVD

The characteristics of plasma are important for the deposition of SiOC(-H) low dielectric thin film. The effect of UV light illumination on the plasma parameter in the capacitive coupled plasma chemical vapor deposition (CCP-CVD) system is investigated. The electron density is almost not changed, but the electron temperature decreases by UV light illumination. The deposition rate increases and the dielectric constant of the film is lowered with UV light.

Download Full-text

The chemical bond structure investigation on the Si-O-C composite films with low dielectric constant deposited by high density plasma chemical vapor deposition

IEEE Conference Record - Abstracts 2002 IEEE International Conference on Plasma Science (Cat No 02CH37340) PLASMA-02 ◽

10.1109/plasma.2002.1030549 ◽

2003 ◽

Author(s):

Chang Shil Yang ◽

Kyoung Suk ◽

Chi Kyu Choi

Keyword(s):

Dielectric Constant ◽

Vapor Deposition ◽

Composite Films ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Structure Investigation ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Low Dielectric ◽

Density Plasma

Download Full-text

Dielectric thin film deposition by electron cyclotron resonance plasma chemical vapor deposition for optoelectronics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587140 ◽

1994 ◽

Vol 12 (1) ◽

pp. 433 ◽

Cited By ~ 22

Author(s):

Steven Dzioba

Keyword(s):

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Thin Film Deposition ◽

Film Deposition ◽

Plasma Chemical ◽

Dielectric Thin Film ◽

Plasma Chemical Vapor Deposition ◽

Resonance Plasma

Download Full-text

Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition

10.7567/ssdm.1995.pc-5-4 ◽

1995 ◽

Author(s):

Seung Min LEE ◽

Min PARK ◽

Kyu Chang PARK ◽

Jong Tae BAEK ◽

Jin JANG

Keyword(s):

Dielectric Constant ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Remote Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Low Dielectric

Download Full-text

Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition

10.7567/ssdm.1993.s-ii-8 ◽

1993 ◽

Cited By ~ 1

Author(s):

Takashi Fukada ◽

Takashi Akahori

Keyword(s):

Dielectric Constant ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Ecr Plasma ◽

Low Dielectric

Download Full-text

Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1579 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 1579-1582 ◽

Cited By ~ 13

Author(s):

Seung Min Lee ◽

Min Park ◽

Kyu Chang Park ◽

Jong Tae Bark ◽

Jin Jang

Keyword(s):

Dielectric Constant ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Remote Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Low Dielectric

Download Full-text

Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

10.1117/12.319623 ◽

1998 ◽

Author(s):

Dongsheng Mao ◽

Manqing Tan ◽

Lianhui Chen

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Plasma Chemical ◽

Dielectric Thin Film ◽

Plasma Chemical Vapor Deposition ◽

Resonance Plasma

Download Full-text

Remote hydrogen plasma chemical vapor deposition from alkylsilane and alkylcarbosilane single-sources: Mechanism of the process and properties of resulting silicon-carbon deposits

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:2001388 ◽

2001 ◽

Vol 11 (PR3) ◽

pp. Pr3-691-Pr3-702

Author(s):

A. M. Wrobel

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Hydrogen Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Carbon Deposits ◽

Silicon Carbon

Download Full-text

HIGH RATE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1989578 ◽

1989 ◽

Vol 50 (C5) ◽

pp. C5-667-C5-672

Author(s):

DING-KUN PENG ◽

CHUN-LIN WANG ◽

GUANG-YAO MENG

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Deposition Process ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

Download Full-text

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽

10.3131/jvsj.40.660 ◽

1997 ◽

Vol 40 (8) ◽

pp. 660-663

Author(s):

Hideo OKAYAMA ◽

Tsukasa KUBO ◽

Noritaka MOCHIZUKI ◽

Akiyoshi NAGATA ◽

Hiromu ISA

Keyword(s):

Thin Films ◽

Fuel Cell ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Solid Oxide ◽

Oxide Fuel ◽

Stabilized Zirconia ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

Download Full-text

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979209048559 ◽

2009 ◽

Vol 23 (09) ◽

pp. 2159-2165 ◽

Cited By ~ 2

Author(s):

SUDIP ADHIKARI ◽

MASAYOSHI UMENO

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Surface Wave ◽

Amorphous Carbon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Hydrogenated Amorphous Carbon ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Download Full-text