Position Resolved In-Situ X-Ray Observation of Recrystallization and Its Description by Self-Organized Criticality

2004 ◽  
Vol 467-470 ◽  
pp. 689-696
Author(s):  
Thomas Wroblewski

A novel X-ray diffraction method, allowing the position resolved imaging of a polycrystalline specimen using the diffracted radiation, was applied for in situ investigation of recrystallization of cold-rolled copper. A large area of the specimen could be observed simultaneously, yielding information about nucleation and growth of many individual crystallites. The recrystallization process showed a stochastic behavior which can be described by the model of self-organized criticality.

2017 ◽  
Vol 72 (6) ◽  
pp. 355-364
Author(s):  
A. Kopp ◽  
T. Bernthaler ◽  
D. Schmid ◽  
G. Ketzer-Raichle ◽  
G. Schneider

2016 ◽  
Vol 850 ◽  
pp. 191-196 ◽  
Author(s):  
Wei Wang ◽  
Cun Lei Zou ◽  
Ren Geng Li ◽  
Wen Wen ◽  
Hui Jun Kang ◽  
...  

In situ synchrotron X-ray diffraction was used to study a deformed Cu-0.88 Fe-0.24 P alloy during heating process. The measurements were performed at room temperature and also at high temperatures up to 893 K in order to determine the recovery, ageing and recrystallization process. With the increase of temperature, the angles of copper matrix peaks moved left and the FWHM (full width at half maximum) decreased slightly. Fe3P precipitates were first detected at 533 K, reached the maximum at 673 K, and re-dissolved into matrix at 853 K. A dramatic decrease in FWHM was observed accompanied by the precipitation of Fe3P phases, indicating the reduction of lattice distortion of copper matrix.


2014 ◽  
Vol 54 (6) ◽  
pp. 1799-1802 ◽  
Author(s):  
Lisa Batzdorf ◽  
Franziska Fischer ◽  
Manuel Wilke ◽  
Klaus-Jürgen Wenzel ◽  
Franziska Emmerling

1996 ◽  
Vol 449 ◽  
Author(s):  
L.J. Lauhon ◽  
S. A. Ustin ◽  
W. Ho

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).


Author(s):  
Bo Jakobsen ◽  
Ulrich Lienert ◽  
Jon Almer ◽  
Wolfgang Pantleon ◽  
Henning Friis Poulsen

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