Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation

2005 ◽  
Vol 483-485 ◽  
pp. 1025-1028 ◽  
Author(s):  
Nikita B. Strokan ◽  
Alexander M. Ivanov ◽  
N.S. Savkina ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Proton Irradiation ◽  
Type Structure ◽  
Particle Detectors ◽  
Nuclear Particle ◽  
P Type ◽  
Nuclear Detectors ◽  
Mev Protons

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 10 13 cm –2 ; in this case, the resolution is ≤ 10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈ 3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 10 14 cm.

N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors

2002 ◽  
Vol 389-393 ◽  
pp. 1439-1444 ◽  
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
D.V. Davydov ◽  
N.S. Savkina ◽  
...  
Keyword(s):  
Particle Detectors ◽  
Nuclear Particle ◽  
The Creation ◽  
P Type ◽  
Sic Films

Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes

2008 ◽  
Vol 600-603 ◽  
pp. 95-98 ◽  
Author(s):  
Christian Hecht ◽  
Bernd Thomas ◽  
René A. Stein ◽  
Peter Friedrichs
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Memory Effects ◽  
Schottky Barrier Diodes ◽  
Pin Diodes ◽  
Power Diodes ◽  
Homoepitaxial Growth ◽  
Layer Deposition ◽  
Reverse Blocking ◽  
P Type

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 7×3” or 6×100mm wafers per run in a new 100mm setup. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm and 7×3” runs will be shown. Results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3”, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices

2008 ◽  
Vol 1069 ◽  
Author(s):  
Christian Hecht ◽  
Bernd Thomas ◽  
Rene Stein ◽  
Peter Friedrichs
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Memory Effects ◽  
Schottky Barrier Diodes ◽  
Power Devices ◽  
Pin Diodes ◽  
Homoepitaxial Growth ◽  
Layer Deposition ◽  
Reverse Blocking ◽  
P Type

ABSTRACTIn this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 6×100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm runs will be shown and compared to results of the former 7×3″ setup. The characteristic of the run-to-run reproducibility for the 6×100mm setup will be discussed. To demonstrate the suitability of the reactor for device production results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3″, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

scholarly journals Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 756
Author(s):  
Chia-Yuan Chen ◽  
Yun-Kai Lai ◽  
Kung-Yen Lee ◽  
Chih-Fang Huang ◽  
Shin-Yi Huang
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Computer Aided Design ◽  
Figure Of Merit ◽  
Type Structure ◽  
Static Characteristics ◽  
Device Structure ◽  
P Type ◽  
Aided Design ◽  
A Current

This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance (Ron,sp). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the Ron,sp. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce Ron,sp. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. Ron,sp is 25% less than that of the traditional vertical MOSFET.

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Noise behavior of semi-insulating GaAs particle detectors before and after proton irradiation

1999 ◽  
Vol 78 (1-3) ◽  
pp. 527-532 ◽  
Author(s):  
U. Biggeri ◽  
C. Canali ◽  
C. Lanzieri ◽  
C. Leroy ◽  
F. Nava ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Particle Detectors ◽  
Before And After

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Wavelength Range ◽  
Epitaxial Layer ◽  
Device Performance ◽  
Uv Detectors ◽  
X Ray ◽  
High Responsivity ◽  
Vacuum Uv

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

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