Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 7×3” or 6×100mm wafers per run in a new 100mm setup. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm and 7×3” runs will be shown. Results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3”, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

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Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices

MRS Proceedings ◽

10.1557/proc-1069-d04-04 ◽

2008 ◽

Vol 1069 ◽

Cited By ~ 1

Author(s):

Christian Hecht ◽

Bernd Thomas ◽

Rene Stein ◽

Peter Friedrichs

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

Memory Effects ◽

Schottky Barrier Diodes ◽

Power Devices ◽

Pin Diodes ◽

Homoepitaxial Growth ◽

Layer Deposition ◽

Reverse Blocking ◽

P Type

ABSTRACTIn this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 6×100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm runs will be shown and compared to results of the former 7×3″ setup. The characteristic of the run-to-run reproducibility for the 6×100mm setup will be discussed. To demonstrate the suitability of the reactor for device production results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3″, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

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Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices

MRS Proceedings ◽

10.1557/proc-0911-b09-02 ◽

2006 ◽

Vol 911 ◽

Cited By ~ 1

Author(s):

Bernd Thomas ◽

Christian Hecht ◽

René Stein ◽

Peter Friedrichs

Keyword(s):

Growth Parameters ◽

Power Devices ◽

Pin Diodes ◽

Continuous Growth ◽

As Doping ◽

Homoepitaxial Growth ◽

Layer Deposition ◽

Research Grade ◽

P Type

AbstractIn this paper we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system. This equipment exhibits a capacity of 7x3” wafers per run and can be upgraded to a 6x4” setup. Characteristics of epilayers and reproducibility of the proc-esses are reported. Furthermore, we show recent results of p-type SiC homoepitaxial growth on 3” 4° off-oriented substrates using a single-wafer hot-wall CVD. The dependence of layer prop-erties on growth parameters, doping and thickness uniformity as well as doping memory effects are discussed. For the characterization of epitaxially grown pn-junctions first research grade pin-diodes were fabricated. The p-type emitters were either deposited in the same growth run to-gether with the n-type buffer and drift layers (continuous growth) or the n- and p-layers were grown in two different growth runs (separate growth).

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Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

MRS Proceedings ◽

10.1557/proc-742-k1.1 ◽

2002 ◽

Vol 742 ◽

Cited By ~ 1

Author(s):

T. Kimoto ◽

K. Hashimoto ◽

K. Fujihira ◽

K. Danno ◽

S. Nakamura ◽

...

Keyword(s):

Epitaxial Growth ◽

Schottky Barrier ◽

Breakdown Voltage ◽

Doping Concentration ◽

Schottky Barrier Diodes ◽

Homoepitaxial Growth ◽

Nitrogen Incorporation ◽

Impurity Doping ◽

Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.06ge09 ◽

2017 ◽

Vol 56 (6S1) ◽

pp. 06GE09

Author(s):

Dong-Won Kang ◽

Hae Nyung Chang ◽

Min-Woo Ha

Keyword(s):

Numerical Simulation ◽

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

High Breakdown Voltage ◽

P Type

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TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

International Journal of Modern Physics B ◽

10.1142/s0217979208039496 ◽

2008 ◽

Vol 22 (14) ◽

pp. 2309-2319 ◽

Cited By ~ 1

Author(s):

K. ERTURK ◽

M. C. HACIISMAILOGLU ◽

Y. BEKTORE ◽

M. AHMETOGLU

Keyword(s):

Temperature Dependence ◽

Schottky Barrier ◽

Barrier Height ◽

Thermionic Emission ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Semiconductor Interface ◽

Linear Portion ◽

Barrier Heights ◽

P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

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High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

MRS Proceedings ◽

10.1557/proc-572-75 ◽

1999 ◽

Vol 572 ◽

Cited By ~ 3

Author(s):

Q. Zhang ◽

V. Madangarli ◽

S. Soloviev ◽

T. S. Sudarshan

Keyword(s):

Schottky Barrier ◽

Oxide Layer ◽

Breakdown Voltage ◽

Schottky Diodes ◽

Schottky Barrier Diodes ◽

Edge Termination ◽

Forward Current ◽

Current Voltage ◽

Thick Oxide Layer ◽

P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

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Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.1025 ◽

2005 ◽

Vol 483-485 ◽

pp. 1025-1028 ◽

Cited By ~ 4

Author(s):

Nikita B. Strokan ◽

Alexander M. Ivanov ◽

N.S. Savkina ◽

Alexander A. Lebedev ◽

Vitalii V. Kozlovski ◽

...

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

Proton Irradiation ◽

Type Structure ◽

Particle Detectors ◽

Nuclear Particle ◽

P Type ◽

Nuclear Detectors ◽

Mev Protons

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 10 13 cm –2 ; in this case, the resolution is ≤ 10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈ 3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 10 14 cm.

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