Noise behavior of semi-insulating GaAs particle detectors before and after proton irradiation

1999 ◽  
Vol 78 (1-3) ◽  
pp. 527-532 ◽  
Author(s):  
U. Biggeri ◽  
C. Canali ◽  
C. Lanzieri ◽  
C. Leroy ◽  
F. Nava ◽  
...  
1998 ◽  
Vol 61 (3) ◽  
pp. 415-426
Author(s):  
F. Tenbusch ◽  
W. Braunschweig ◽  
Z. Chu ◽  
R. Krais ◽  
Th. Kubicki ◽  
...  

2004 ◽  
Author(s):  
Klaus Reif ◽  
Henning Poschmann ◽  
Karl-Heinz Marien ◽  
Philipp Mueller

2005 ◽  
Vol 483-485 ◽  
pp. 1025-1028 ◽  
Author(s):  
Nikita B. Strokan ◽  
Alexander M. Ivanov ◽  
N.S. Savkina ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
...  

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 10 13 cm –2 ; in this case, the resolution is ≤ 10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈ 3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 10 14 cm.


2021 ◽  
Vol 9 ◽  
Author(s):  
Arianna Morozzi ◽  
Francesco Moscatelli ◽  
Tommaso Croci ◽  
Daniele Passeri

A comprehensive numerical model which accounts for surface damage effects induced by radiation on silicon particle detectors is presented with reference to the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool. The overall aim of this work is to present the “Perugia 2019 Surface” damage modeling scheme, fully implemented within the TCAD environment, which effectively describes the surface damage effects induced by radiation in silicon sensors relying on a limited number of parameters relevant for physics. To this end, extensive measurement campaigns have been recently performed on gated-diodes and MOS capacitors at Fondazione Bruno Kessler (FBK) in Italy, Hamamatsu Photonics (HPK) in Japan and Infineon Technologies (IFX) in Austria on both n-type and p-type substrates (with and without p-spray isolation implants), in order to extrapolate the relevant parameters which rule the surface damage effects. The integrated interface trap density and the oxide charge density, have been determined before and after X-ray irradiation with doses ranging from 0.05 to 100 Mrad(SiO2), for each specific foundry and technology flavor. The main guidelines of this study are the versatility and generality of the simulation approach.


Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3388 ◽  
Author(s):  
Ceponis ◽  
Badokas ◽  
Deveikis ◽  
Pavlov ◽  
Rumbauskas ◽  
...  

Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects are formed in detector structures during operation at extreme conditions. In this work, study of evolution of the proton-induced luminescence spectra and short-circuit current has been simultaneously performed during 1.6 MeV proton irradiation. GaN and AlGaN (with various Al concentrations) epi-layers grown by metalorganic chemical vapour deposition technique and Schottky diode structures have been examined. Variations of spectral and electrical parameters could be applied for the remote dosimetry of large hadron fluences.


2019 ◽  
Vol 33 (27) ◽  
pp. 1950320
Author(s):  
S. F. Samadov ◽  
O. A. Samedov ◽  
O. Z. Alekperov ◽  
M. Kulik ◽  
A. I. Najafov ◽  
...  

In this work, the dielectric and electrical properties of TlInS2 crystal have been studied in the temperature range of 300–550 K before and after being implanted with H[Formula: see text] ion. The dielectric parameters such as the real and imaginary parts of permittivity, impedance and dielectric loss have been investigated in this temperature range. The role of free ions in the relaxation process when f [Formula: see text] 10 kHz on the basis of the study of dielectric parameters in the frequency range of 25–106 Hz has been determined. It has been observed that the interdependencies of the real and imaginary parts of dielectric permittivity go beyond the standard.


2020 ◽  
Vol 999 ◽  
pp. 39-46
Author(s):  
Cheng Liang Li ◽  
Guo Gang Shu ◽  
Jing Li Yan ◽  
Wei Liu ◽  
Yuan Gang Duan

The irradiation embrittlement damage of reactor pressure vessel (RPV) steel is one of its primary failure mechanisms. In this work, neutron, ion and proton irradiation experiments were carried on the same commercial RPV steels with the same irradiation fluence under the same temperature of 292°C. Then the nano-indentation hardness tests were performed on the RPV steel before and after irradiation. The results show that the irradiation hardening effects are observed by means of nano-indentation technique under the above three irradiations, and the hardening features are basically the same. While the max variation and increase rate are obviously different between those irradiations. It is found that the main reason of the above differences are caused by different energies of irradiation energetic particles, resulting in different types and quantities of defects. The conclusions in this paper are helpful to select and compare different irradiation experiments to the research of RPV steels irradiation embrittlement damage.


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