An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO2 MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study

2005 ◽  
Vol 483-485 ◽  
pp. 681-684
Author(s):  
Kumaresan Ramanujam ◽  
Hidetsugu Furuichi ◽  
Koshi Taguchi ◽  
Satoshi Yukumoto ◽  
Shigehiro Nishino
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
Semiconductor Device ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Amorphous Sio2 ◽  
Interface Quality ◽  
N2 Atmosphere ◽  
The One

Investigations were carried out to achieve high performance Silicon Carbide Metal-Oxide-Semiconductor device structures. 4H-SiC/SiO2 interface was prepared by growing amorphous SiO2 layers by an alternate low temperature atmospheric CVD technique using TEOS as source material and the interface properties were compared with the one prepared by conventional thermal oxidation technique. The low temperature CVD technique offered the improvement of the interface properties with reduced Dit in comparison with thermally oxidized interface. As a new attempt, an in situ post growth annealing technique in N2 atmosphere was carried out to reduce the Dit further. Both the CVD technique and the in situ annealing processes that were used in the present study have been identified to be potential approaches to improve the interface quality.

Electrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning Methods

1998 ◽  
Vol 65-66 ◽  
pp. 237-240 ◽  
Author(s):  
Matty Caymax ◽  
S. Decoutere ◽  
Erika Röhr ◽  
W. Vandervorst ◽  
Marc M. Heyns ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ex Situ ◽  
Interface Quality ◽  
Substrate Interface ◽  
Cleaning Methods

scholarly journals In-situ formed and low-temperature deposited Nb: TiO2 compact-mesoporous layer for hysteresis-less perovskite solar cells with high performance

2020 ◽  
Author(s):  
Miao Yu ◽  
Haoxuan Sun ◽  
Xiaona Huang ◽  
Yichao Yan ◽  
Wanli Zhang
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
High Performance ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
High Power Conversion Efficiency ◽  
Mesoporous Structures

Abstract Recently, reported perovskite solar cells (PSCs) with high power conversion efficiency (PCE) are mostly based on mesoporous structures containing mesoporous titanium oxide (TiO 2 ) which is the main factor to reduce the overall hysteresis. However, existing fabrication approaches for mesoporous TiO 2 generally require a high temperature (>450 °C) annealing process. Moreover, there is still plenty of scope for improvement in terms of increasing the electron conductivity and reducing the carrier recombination. Herein, a facile one-step, in situ and low-temperature method was developed to prepare an Nb:TiO 2 compact-mesoporous layer to serve as both a scaffold and an electron transport layer (ETL) in PSCs. The Nb:TiO 2 compact-mesoporous layer based PSCs exhibit suppressed hysteresis, which is attributed to the synergistic effect of the large interface surface area caused by nano-pin morphology on the surface and the improved carrier transportation caused by the presence of Nb. Such a high-quality compact-mesoporous layer allows the PSC achieve a remarkable PCE of 19.74%. This work promises an effective approach for creating hysteresis-less and high-efficiency PSCs based on compact-mesoporous structures with lower energy consumption and cost.

In situ synthesis of a high-performance bismuth oxide based composite cathode for low temperature solid oxide fuel cells

2019 ◽  
Vol 55 (19) ◽  
pp. 2801-2804 ◽  
Author(s):  
Wei Fang ◽  
Tianrang Yang ◽  
Kevin Huang
Keyword(s):  
Low Temperature ◽  
Solid Oxide Fuel Cells ◽  
Bismuth Oxide ◽  
High Performance ◽  
Composite Cathode ◽  
Single Step ◽  
In Situ Synthesis ◽  
Solid Oxide ◽  
Oxide Fuel

A composite cathode consisting of fluorite (Bi0.75Y0.25)0.93Ce0.07O1.5±δ and perovskite La0.8Sr0.2MnO3 is synthesized by in situ single-step phase formation and microstructure assembly.

Low temperature and high performance ZnSnO thin film transistors engineered by in-situ thermal manipulation

2022 ◽  
Author(s):  
Wengao Pan ◽  
Xiaoliang Zhou ◽  
Qingping Lin ◽  
Jie Chen ◽  
Lei Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Processing Temperature ◽  
Practical Application ◽  
Thermal Manipulation

Thin film transistors (TFT) with low cost, high mobility and low processing temperature are key enablers for practical application, which are always contradictory. In this work, we achieved high performance...

Rapid-deposited high-performance submicron encapsulation film with in-situ plasma oxidized Al layer inserted

2021 ◽  
Author(s):  
Houyun Qin ◽  
Chang Liu ◽  
Chong Peng ◽  
Mingxin Lu ◽  
Yiming Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Vapor ◽  
Low Temperature ◽  
High Performance ◽  
Transmission Rate ◽  
Visible Region ◽  
Water Vapor Transmission Rate ◽  
Water Vapor Transmission ◽  
Better Than

Abstract High-performance submicron thin-film encapsulation deposited rapidly under low temperature plays an important role in Si-based organic micro-displays. In this letter, the formation mechanism of high-performance encapsulation films consisting of SiO2/in-situ plasma oxidized Al at 77°C is explained. We think that the reason why the performance of encapsulation films deposited by this method behave better than the simple stacking of SiO2/Al2O3 is the formation of Al-O-Si bonds. By further optimizing the process parameters, the water vapor transmission rate and the transmittance in the visible region have been improved, which reached 10-6 g∙m 2∙day 1 and 90%, respectively.

scholarly journals Interplay between ER Exit Code and Domain Conformation in CFTR Misprocessing and Rescue

2010 ◽  
Vol 21 (4) ◽  
pp. 597-609 ◽  
Author(s):  
Gargi Roy ◽  
Elaine M. Chalfin ◽  
Anita Saxena ◽  
Xiaodong Wang
Keyword(s):  
Low Temperature ◽  
Limited Proteolysis ◽  
Transmembrane Conductance Regulator ◽  
Wild Type ◽  
Transmembrane Conductance ◽  
The One ◽  
Cystic Fibrosis Transmembrane ◽  
Clear Change ◽  
Level Of Processing

Multiple mutations in cystic fibrosis transmembrane conductance regulator (CFTR) impair its exit from the endoplasmic reticulum (ER). We compared two processing mutants: ΔF508 and the ER exit code mutant DAA. Although both have severe kinetic processing defect, DAA but not ΔF508 has substantial accumulation in its mature form, leading to higher level of processing at the steady state. DAA has much less profound conformational abnormalities. It has lower Hsp70 association and higher post-ER stability than ΔF508. The ER exit code is necessary for ΔF508 residual export and rescue. R555K, a mutation that rescues ΔF508 misprocessing, improves Sec24 association and enhances its post-ER stability. Using in situ limited proteolysis, we demonstrated a clear change in trypsin sensitivity in ΔF508 NBD1, which is reversed, together with that of other domains, by low temperature, R555K or both. We observed a conversion of the proteolytic pattern of DAA from the one resembling ΔF508 to the one similar to wild-type CFTR during its maturation. Low temperature and R555K are additive in improving ΔF508 conformational maturation and processing. Our data reveal a dual contribution of ER exit code and domain conformation to CFTR misprocessing and underscore the importance of conformational repair in effective rescue of ΔF508.

In-situ comparison of Si/High-K and Si/SiO2 interface properties in FD SOI MOSFETs operated at low temperature

2007 ◽  
Author(s):  
L. Pham-Nguyen ◽  
C. Fenouillet-Beranger ◽  
S. Cristoloveanu ◽  
A. Vandooren ◽  
M. Orlowski ◽  
...  
Keyword(s):  
Low Temperature ◽  
Interface Properties ◽  
High K

Pd/meso-CoO derived from in situ reduction of the one-step synthesized Pd/meso-Co3O4: high-performance catalysts for benzene combustion

2019 ◽  
Vol 43 (31) ◽  
pp. 12358-12368 ◽  
Author(s):  
Xingtian Zhao ◽  
Ran Zhang ◽  
Yuxi Liu ◽  
Jiguang Deng ◽  
Peng Xu ◽  
...  
Keyword(s):  
Catalytic Activity ◽  
High Performance ◽  
Oxygen Activation ◽  
In Situ Reduction ◽  
Templating Method ◽  
One Step ◽  
The One

The 0.93Pd/meso-CoO is prepared via in situ reduction of 0.85Pd/meso-Co3O4 derived from KIT-6-templating method. The excellent catalytic activity of 0.93Pd/meso-CoO is related to the formed Pd0 species and good oxygen activation ability.

scholarly journals A Low-Temperature Heat Output Photoactive Material-Based High-Performance Thermal Energy Storage Closed System

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1434
Author(s):  
Xiangyu Yang ◽  
Shijie Li ◽  
Jin Zhang ◽  
Xiaomin Wang ◽  
Yongzhen Wang ◽  
...  
Keyword(s):  
Energy Storage ◽  
Low Temperature ◽  
Closed System ◽  
High Performance ◽  
Energy Output ◽  
Heat Output ◽  
Photothermal Conversion ◽  
Long Term Stability ◽  
Conversion Materials ◽  
The One

Designing and synthesizing photothermal conversion materials with better storage capacity, long-term stability as well as low temperature energy output capability is still a huge challenge in the area of photothermal storage. In this work, we report a brand new photothermal conversion material obtained by attaching trifluoromethylated azobenzene (AzoF) to reduced graphene oxide (rGO). AzoF-rGO exhibits outstanding heat storage density and power density up to 386.1 kJ·kg−1 and 890.6 W·kg−1, respectively, with a long half-life (87.7 h) because of the H-bonds based on high attachment density. AzoF-rGO also exhibits excellent cycling stability and is equipped with low-temperature energy output capability, which achieves the reversible cycle of photothermal conversion within a closed system. This novel AzoF-rGO complex, which on the one hand exhibits remarkable energy storage performance as well as excellent storage life span, and on the other hand is equipped with the ability to release heat at low temperatures, shows broad prospects in the practical application of actual photothermal storage.

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