Rapid-deposited high-performance submicron encapsulation film with in-situ plasma oxidized Al layer inserted
Keyword(s):
Abstract High-performance submicron thin-film encapsulation deposited rapidly under low temperature plays an important role in Si-based organic micro-displays. In this letter, the formation mechanism of high-performance encapsulation films consisting of SiO2/in-situ plasma oxidized Al at 77°C is explained. We think that the reason why the performance of encapsulation films deposited by this method behave better than the simple stacking of SiO2/Al2O3 is the formation of Al-O-Si bonds. By further optimizing the process parameters, the water vapor transmission rate and the transmittance in the visible region have been improved, which reached 10-6 g∙m 2∙day 1 and 90%, respectively.
Keyword(s):
2019 ◽
Vol 14
◽
pp. 155892501984251
2018 ◽
Vol 1
(1)
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pp. 23
1979 ◽
Vol 42
(3)
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pp. 225-227
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