SiC Single Crystal Growth on Dual Seed with Different Surface Properties

2013 ◽  
Vol 740-742 ◽  
pp. 11-14
Author(s):  
Sang Il Lee ◽  
Jung Young Jung ◽  
Mi Seon Park ◽  
Hee Tae Lee ◽  
Doe Hyung Lee ◽  
...  
Keyword(s):  
Surface Properties ◽  
Growth Period ◽  
Single Crystal Growth ◽  
Seed Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Mean Square ◽  
Transport Technique ◽  
Better Than

SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique. And then SiC crystal wafers sliced from the SiC ingots were systematically investigated in order to find out the dependence of surface properties for seed on the polytype formation. While n-type SiC crystals exhibiting the 4H polytype were grown on seed crystal having high root-mean-square (rms) value, 6H-SiC crystals were grown on seed having lower rms value. However, 6H polytype was maintained on on-axis and off-axis seeds during the entire growth period. The crystal quality of 6H-SiC single crystals grown on on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on off-axis seed.

SiC single crystal growth by a modified physical vapor transport technique

2005 ◽  
Vol 275 (1-2) ◽  
pp. e555-e560 ◽  
Author(s):  
Peter Wellmann ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Thomas Straubinger ◽  
Albrecht Winnacker ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique

2013 ◽  
Vol 28 (11) ◽  
pp. 1248-1252 ◽  
Author(s):  
Yonggui Shi ◽  
Xinghua Yang ◽  
Dong Wang ◽  
Peng Zhang ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 63-66 ◽  
Author(s):  
Guoli L. Sun ◽  
Irina G. Galben-Sandulache ◽  
Thierry Ouisse ◽  
Jean Marc Dedulle ◽  
Michel Pons ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Seeded Growth ◽  
Grown Layer ◽  
Continuous Feed ◽  
Transport Technique

The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique.

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

2011 ◽  
Vol 679-680 ◽  
pp. 169-172
Author(s):  
Georgios Zoulis ◽  
Jian Wu Sun ◽  
Irina G. Galben-Sandulache ◽  
Guoli L. Sun ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Small Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Optical Investigation ◽  
Continuous Feed ◽  
Transport Technique

We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC samples grown with the Continuous-Feed Physical Vapor Transport technique, using a small diameter neck to filter the defects and improve the as-grown material.

Sublimation Growth and Defect Characterization of AlN Single Crystals

2007 ◽  
Vol 1040 ◽  
Author(s):  
Shaoping Wang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Zaiyuan Ren ◽  
Jung Han ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Defect Characterization ◽  
Growth Technique ◽  
X Ray ◽  
Sublimation Growth ◽  
Growth Experiments

AbstractIn this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique

2012 ◽  
Vol 349 (1) ◽  
pp. 68-74 ◽  
Author(s):  
Yonggui Shi ◽  
Jianfeng Yang ◽  
Hulin Liu ◽  
Peiyun Dai ◽  
Bobo Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Type Silicon ◽  
Silicon Carbide Whiskers ◽  
Transport Technique

Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 505-508
Author(s):  
W.C. Mitchel ◽  
William D. Mitchell ◽  
S.R. Smith ◽  
G.R. Landis ◽  
A.O. Evwaraye ◽  
...  
Keyword(s):  
Hall Effect ◽  
Deep Level ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Admittance Spectroscopy ◽  
Temperature Dependent ◽  
Thermally Stimulated Current ◽  
Commercial Grade ◽  
Transport Technique

A variety of 4H-SiC samples from undoped crystals grown by the physical vapor transport technique have been studied by temperature dependent Hall effect, optical and thermal admittance spectroscopy and thermally stimulated current. In most samples studied the activation energies were in the range 0.9 - 1.6 eV expected for commercial grade HPSI 4H-SiC. However, in several samples from developmental crystals a previously unreported deep level at EC-0.55 ± 0.01 eV was observed. Thermal admittance spectroscopy detected one level with an energy of about 0.53 eV while optical admittance spectroscopy measurements resolved two levels at 0.56 and 0.64 eV. Thermally stimulated current measurements made to study compensated levels in the material detected several peaks at energies in the range 0.2 to 0.6 eV.

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