SiC Super Junction Power Devices: Modeling and Analysis

2005 ◽  
Vol 483-485 ◽  
pp. 957-960
Author(s):  
Z.J. Shen ◽  
X. Cheng ◽  
Beom Soo Kang ◽  
K. So ◽  
I. Hshieh
Keyword(s):  
Aspect Ratio ◽  
High Voltage ◽  
Power Devices ◽  
Theoretical Limit ◽  
Modeling And Analysis ◽  
Charge Imbalance

In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.

“Getting High Resolution Out of A High Voltage Microscope”

1980 ◽  
Vol 38 ◽  
pp. 822-825
Author(s):  
David J. Smith
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
High Voltage ◽  
Theoretical Limit ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Technological Advances ◽  
Potential Improvement ◽  
Lower Voltage

The initial attractions of the high voltage electron microscope (HVEM) stemmed mainly from the possibility of considerable increases in electron penetration through thick specimens compared with conventional 100KV microscopes, although the potential improvement in resolution associated with the decrease in election wavelength had been fully appreciated for many years (eg. Cosslett, 1946)1, even if not realizable in practice. Subsequent technological advances enabled the performance of lower voltage machines to be brought closer to the theoretical limit, to be followed in turn by more recent projects which have been successful, eventually, in achieving even higher resolution with dedicated higher voltage instruments such as those at Kyoto (500KV)2, Munich (400KV)3, Ibaraki (1250KV)4 and Cambridge (600KV)5. It does not necessarily follow however that the performance of journal high voltage microscopes can be easily upgraded, retrospectively, to the same level, as will be discussed in detail below.

Defect engineering in SiC technology for high-voltage power devices

2020 ◽  
Vol 13 (12) ◽  
pp. 120101
Author(s):  
Tsunenobu Kimoto ◽  
Heiji Watanabe
Keyword(s):  
High Voltage ◽  
Defect Engineering ◽  
Power Devices

scholarly journals Portable DC Supply Based on SiC Power Devices for High-Voltage Marx Generator

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 313
Author(s):  
Jacek Rąbkowski ◽  
Andrzej Łasica ◽  
Mariusz Zdanowski ◽  
Grzegorz Wrona ◽  
Jacek Starzyński
Keyword(s):  
High Voltage ◽  
Specific Area ◽  
Input Voltage ◽  
Marx Generator ◽  
Power Devices ◽  
Laboratory Setup ◽  
High Voltage Gain ◽  
Main Components ◽  
Two Stages ◽  
Very High

The paper describes major issues related to the design of a portable SiC-based DC supply developed for evaluation of a high-voltage Marx generator. This generator is developed to be a part of an electromagnetic cannon providing very high voltage and current pulses aiming at the destruction of electronics equipment in a specific area. The portable DC supply offers a very high voltage gain: input voltage is 24 V, while the generator requires supply voltages up to 50 kV. Thus, the system contains two stages designed on the basis of SiC power devices operating with frequencies up to 100 kHz. At first, the input voltage is boosted up to 400 V by a non-isolated double-boost converter, and then a resonant DC-DC converter with a special transformer elevates the voltage to the required level. In the paper, the main components of the laboratory setup are presented, and experimental results of the DC supply and whole system are also shown.

Design Considerations of Packaging a High Voltage Current Switch

2015 ◽  
Author(s):  
Ankan De ◽  
Adam Morgan ◽  
Subhashish Bhattacharya ◽  
Douglas C. Hopkins
Keyword(s):  
High Voltage ◽  
Power Devices ◽  
Variable Parameters ◽  
Package Design ◽  
Current Switch ◽  
Density Distributions ◽  
Design Considerations ◽  
Parasitic Parameters ◽  
Electric Potentials ◽  
Switch Design

In this paper an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode has been analyzed in regards to gate terminal operation and the parasitic line inductance of the structure. ANSYS Q3D/MAXWELL software have been used to analyze and extract parasitic inductance and capacitances in the package along with electromagnetic fields, electric potentials, and current density distributions throughout the package for variable parameters. SIMPLIS-SIMETRIX is used to simulate typical switch behavior for different parasitic parameters under hard switched conditions. Various simulation results have then been used to redesign and justify the optimized package structure for the final current switch design. The thermal behavior of such a package is also conducted in COMSOL in order to ensure that the thermal ratings of the power devices is not exceeded, and to understand where potentially harmful hotspots could arise and estimate the maximum attainable frequency of operation. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch package.

Junction technology in SiC for high-voltage power devices

2013 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
Koutarou Kawahara ◽  
Hiroki Niwa ◽  
Takafumi Okuda ◽  
Jun Suda
Keyword(s):  
High Voltage ◽  
Power Devices

scholarly journals Modeling and analysis of the characteristics of SiC MOSFET

2021 ◽  
Vol 2125 (1) ◽  
pp. 012051
Author(s):  
Guoqing Qiu ◽  
Kedi Jiang ◽  
Shengyou Xu ◽  
Xin Yang ◽  
Wei Wang
Keyword(s):  
Simulation Model ◽  
Circuit Simulation ◽  
Power Conversion ◽  
Simulation Models ◽  
Data Sheet ◽  
Superior Performance ◽  
Power Devices ◽  
Matlab Simulink ◽  
Modeling And Analysis ◽  
Mathematical Processing

Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOSFET model, and then the product data sheet is compared with the fitted data. The results show that the switching simulation waveforms are in general agreement with the data sheet waveforms, and the error is less than 7%. Verifing the accuracy of the model and reducing the difficulty of modeling, it provides a new idea for establishing the circuit simulation model of SiC MOSFET in Matlab/Simulink.

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