Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution

We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6mm/hr (12mm/hr) while that from the self-flux was only 2mm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype.

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Deposition of diamond films on single crystalline silicon carbide substrates

Diamond and Related Materials ◽

10.1016/j.diamond.2019.107625 ◽

2020 ◽

Vol 101 ◽

pp. 107625

Author(s):

Debarati Mukherjee ◽

Filipe Oliveira ◽

Simone Camargo Trippe ◽

Shlomo Rotter ◽

Miguel Neto ◽

...

Keyword(s):

Silicon Carbide ◽

Crystalline Silicon ◽

Diamond Films ◽

Single Crystalline Silicon ◽

Single Crystalline

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Buckling Porous SiC Membranes

Proceedings ◽

10.3390/proceedings2130785 ◽

2018 ◽

Vol 2 (13) ◽

pp. 785

Author(s):

Markus Leitgeb ◽

Christopher Zellner ◽

Manuel Dorfmeister ◽

Michael Schneider ◽

Ulrich Schmid

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Design Concepts ◽

Photochemical Etching ◽

Potential Applications ◽

Etching Parameters ◽

Porous Sic ◽

Highly Porous

In preliminary studies it could be shown that single crystalline silicon carbide wafers can be porosified with metal assisted photochemical etching. Furthermore, the generation of porous areas which are locally defined is possible with this method. By adjusting the etching parameters, a highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled membrane configuration. Such membranes might open up potential applications in MEMS design concepts.

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First-Principles Study of Faceted Single-Crystalline Silicon Carbide Nanowires and Nanotubes

The Journal of Physical Chemistry C ◽

10.1021/jp808231s ◽

2008 ◽

Vol 113 (3) ◽

pp. 856-861 ◽

Cited By ~ 15

Author(s):

Zhenhai Wang ◽

Mingwen Zhao ◽

Tao He ◽

Xuejuan Zhang ◽

Zexiao Xi ◽

...

Keyword(s):

Silicon Carbide ◽

First Principles ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

First Principles Study

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Culture of Mammalian Cells on Single Crystal SiC Substrates

MRS Proceedings ◽

10.1557/proc-0950-d04-22 ◽

2006 ◽

Vol 950 ◽

Cited By ~ 12

Author(s):

Camilla Coletti ◽

Mark J. Jaroszeski ◽

Andrew M. Hoff ◽

Stephen E. Saddow

Keyword(s):

Silicon Carbide ◽

Single Crystal ◽

Mammalian Cells ◽

Crystalline Silicon ◽

Si Substrates ◽

Diphenyltetrazolium Bromide ◽

Standard Culture ◽

Single Crystal Sic ◽

Biological World

ABSTRACTCrystalline silicon carbide (SiC) has the potential to become an important biomaterial and a versatile interface between the electronic and biological world. In this work, single crystal SiC biocompatibility is investigated by culturing mammalian cells directly on SiC substrates. The cell morphology and the quality of the cell adhesion have been studied using fluorescence microscopy, while MTT [3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide] assays have been performed to quantify cell viability and number. Standard culture-wells and silicon (Si) substrates were used as controls in the final assessment of crystalline SiC biocompatibility.

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