Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application

2007 ◽  
Vol 556-557 ◽  
pp. 655-658 ◽  
Author(s):  
Andreas Fissel ◽  
M. Czernohorsky ◽  
R. Dagris ◽  
H.J. Osten
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gadolinium Oxide ◽  
Flat Band ◽  
Growth Interface ◽  
X Ray ◽  
Fixed Charges ◽  
High K ◽  
Structural And Electrical Properties ◽  
Cv Measurements ◽  
Oriented Layers

We investigated the growth, interface formation as well as the structural and electrical properties of crystalline gadolinium oxide (Gd2O3) directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. The Gd2O3 layers were found to grow epitaxially resulting in the formation of flat (111) oriented layers with the cubic bixbyite type of structure. X-ray photoelectron spectroscopy measurements reveal a silicate-like Gd2O3/SiC interface. Furthermore, conduction and valence band discontinuities at the Gd2O3/6H-SiC interface were estimated with 1.9 eV and 1.2 eV, respectively. The fabricated capacitors exhibit suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1V and breakdown fields > 4.3 MV/cm for layers with 14 nm thickness. The CV measurements exhibit only small negative flat band shifts and a very small hysteresis, resulting from fixed charges or interface trap levels in the range of 1x1012 cm-2. These properties make Gd2O3 suitable for high-k application also for SiC.

Strategies for CMOS Low Equivalent Oxide Thickness Achievement with High-κ Oxides Grown on Si(001) by MBE

2008 ◽  
Vol 1073 ◽  
Author(s):  
Loic Becerra ◽  
Clément Merckling ◽  
Nicolas Baboux ◽  
Mario El-Kazzi ◽  
Guillaume Saint-Girons ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Oxide Thickness ◽  
Flat Band ◽  
Equivalent Oxide Thickness ◽  
Electrical Measurements ◽  
X Ray ◽  
High K ◽  
Density Of Interface States ◽  
Post Deposition

ABSTRACTAmorphous LaAlO3 high-k oxide was grown in a molecular beam epitaxy reactor on p-Si(001) using a thin γ-Al2O3 epitaxied buffer layer. Interfaces were free of SiO2 or silicates and remained abrupt despite the high temperature used for annealing, as X-ray photoelectron spectroscopy showed. Electrical measurements performed on as-deposited samples revealed a dielectric constant value close to that of the bulk, small equivalent oxide thickness and low density of interface states. But some negative charges were present, leading to a flat band voltage shift. Post deposition annealing with forming gas can correct this effect.

Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Analysis ◽  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Interface Properties ◽  
X Ray ◽  
Bonding Structure ◽  
Thermal Growth ◽  
High K ◽  
Passivation Layers

ABSTRACTWe have studied the thermal growth chemistry and bonding structure of three promising ultrathin (5–20Å), nitrogen rich passivation layers on Si(100), namely-Si3N4, NO/Si(100) grown oxynitride and NO annealed SiO2. These films are intended to serve as substrates with excellent diffusion barrier/interface properties during deposition of high- K dielectrics such as Ta2O5, with tSiO2 equivalent <30Å for ULSI applications. In this paper we show that it is possible to form films with a tailored composition and nitrogen profile using techniques that can easily be integrated with existing silicon processing technology. Alternating growth and surface analysis by X-Ray Photoelectron Spectroscopy (XPS) is used to non destructively characterize the growth.

An X-ray photoelectron spectroscopy study of strontium-titanate-based high-k film stacks

2012 ◽  
Vol 90 ◽  
pp. 138-140 ◽  
Author(s):  
L. Sygellou ◽  
H. Tielens ◽  
C. Adelmann ◽  
S. Ladas
Keyword(s):  
Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
High K

Stability of Nitrogen and Hydrogen in High-k Dielectrics

2003 ◽  
Vol 786 ◽  
Author(s):  
K.P. Bastos ◽  
R.P. Pezzi ◽  
L. Miotti ◽  
G.V. Soares ◽  
C. Driemeier ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Species ◽  
Atomic Scale ◽  
Ion Scattering ◽  
X Ray ◽  
Atomic Transport ◽  
Low Energy Ion Scattering ◽  
High K ◽  
Atomic Exchange ◽  
Processing Steps

ABSTRACTWe report here on atomic transport, thermal stability, and chemical evolution of HfSiO, HfSiN, and AlON films on Si(001), aiming at investigating the atomic scale behaviour of the involved chemical species, N and H in particular, when the films are submitted to usual thermal processing steps in inert and oxidizing atmospheres. The films were characterized by nuclear reaction analyses in resonant and non-resonant regions of the cross-section curves, X-ray photoelectron spectroscopy, and low energy ion scattering. The HfSiN/Si structure was shown to be more resistant to oxygen diffusion than HfSiO/Si, although the amounts of O incorporated in HfSiN/Si are larger than in HfSiO/Si. The main channel of oxygen incorporation is atomic exchange with nitrogen or oxygen atoms. HfSiN film on Si incorporate more hydrogen (or deuterium) and in more stable configurations than HfSiO/Si. Nitrogen incorporation into AlON films on Si renders this structure more stable against thermal annealing in vacuum and/or oxidizing atmospheres than Al2O3/Si.

scholarly journals Effect of N,C-ITO on Composite N,C-Ti/N,C-ITO/ITO Electrode Used for Photoelectrochemical Degradation of Aqueous Pollutant with Simultaneous Hydrogen Production

2012 ◽  
Vol 2012 ◽  
pp. 1-10 ◽  
Author(s):  
Kee-Rong Wu ◽  
Chung-Hsuang Hung ◽  
Chung-Wei Yeh ◽  
Chien-Chung Wang ◽  
Jiing-Kae Wu
Keyword(s):  
Hydrogen Production ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Organic Pollutant ◽  
Synergetic Effect ◽  
Flat Band ◽  
Light Illumination ◽  
X Ray ◽  
Diffraction Patterns ◽  
Band Gap Narrowing

This study reports the effect of N,C-ITO (indium tin oxide) layer on composite N,C-TiO2/N,C-ITO/ITO (Ti/TO) electrode used for efficient photoelectrocatalytic (PEC) degradation of aqueous pollutant with simultaneous hydrogen production. The structural properties of the composite Ti/TO electrode that determined by X-ray diffraction and Raman scattering, show primarily the crystallized anatase TiO2phase and distinct diffraction patterns of polycrystalline In2O3phase. Under solar light illumination, the composite Ti/TO electrode yields simultaneously a hydrogen production rate of 12.0 μmol cm−2 h−1and degradation rate constant of  cm−2 h−1in organic pollutant. It implies that the overlaid N,C-TiO2layer enhances not only the photocurrent response of the composite Ti/TO electrode at entire applied potentials, but also the flat band potential; a shift of about 0.1 V toward cathode, which is desperately beneficial in the PEC process. In light of the X-ray photoelectron spectroscopy findings, these results are attributable partly to the synergetic effect of N,C-codoping into the TiO2and ITO lattices on their band gap narrowing and photosensitizing as well. Thus, the Ti/TO electrode can potentially serve an efficient PEC electrode for simultaneous pollutant degradation and hydrogen production.

Effect of Systematic Changes of Ti and Hf Si-oxynitride Alloys by Nitrogen Incorporation as a Bond Constraint on Electrical and Material Properties

2007 ◽  
Vol 996 ◽  
Author(s):  
Sanghyun Lee ◽  
Gerry Lucovsky ◽  
L. B. Fleming ◽  
Jan Luning
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Ternary Alloys ◽  
Flat Band ◽  
Compositional Dependence ◽  
X Ray ◽  
State Splitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
X Ray Absorption

AbstractWe have investigated the effect of Si3N4 content in (Ti(Hf)O2)x(Si3N4)y(SiO2)1-x-y pseudo-ternary alloys by tracking systematic changes of electrical properties, including electrically active defects. Results from Soft x-ray photoelectron spectroscopy (SXPS) studies indicate no detectable hole traps for Ti/Hf Si oxynitrides with Si3N4 content >35%; these alloys have equal concentrations of Ti(Hf)O2 and SiO2, ~30-32%, and additionally are stable for annealing in Ar ambients to temperatures of 1100°C. Derivative near edge x-ray absorption spectroscopy (NEXAS) comparisons for the O K1 edges of TiO2 and optimized Ti Si oxynitride alloys provides a significantly reduced average crystal field d-state splitting from 1.9 to 1.6eV, as well as decreased electron trapping, and is correlated with a four-fold coordination of Ti in the Ti Si oxynitride alloys. The flat band voltage shift with varying frequency from 10 kHz to 1MHz in these alloys is less than 12 mV and the compositional dependence of current-voltage characteristics on Si3N4 composition results in the lowest leakage current at a Si3N4 content of ~40 % with the smallest equivalent oxide thickness (EOT) as well. Based on these studies, Transition Metal (TM) Si oxynitride alloys are anticipated to yield EOT <1 nm for scaled CMOS devises.

Probing buried interfaces on Ge-based metal gate/high-k stacks by hard X-ray photoelectron spectroscopy

2011 ◽  
Vol 257 (7) ◽  
pp. 3007-3013 ◽  
Author(s):  
J. Rubio-Zuazo ◽  
E. Martinez ◽  
P. Batude ◽  
L. Clavelier ◽  
A. Chabli ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Metal Gate ◽  
X Ray ◽  
Buried Interfaces ◽  
High K
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